Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

Profile simulations of gas chopping etching processes : model development and comparison with experiments

The progress in microsystem technology or nano technology places extended requirements to the fabrication processes. The trend is moving towards structuring within the nanometer scale on the one hand, and towards fabrication of structures with high aspect ratio (ratio of vertical vs. lateral dimensions) and large depths in the 100 µm scale on the other hand. Current procedures for the microstructuring of silicon are wet chemical etching and dry or plasma etching. A modern plasma etching technique for the structuring of silicon is the so-called "gas chopping" etching technique (also called "time-multiplexed etching"). In this etching technique, passivation cycles, which prevent lateral underetching of sidewalls, and etching cycles, which etch preferably in the vertical direction because of the sidewall passivation, are constantly alternated during the complete etching process. To do this, a CHF3/CH4 plasma, which generates CF monomeres is employed during the passivation cycle, and a SF6/Ar, which generates fluorine radicals and ions plasma is employed during the etching cycle. Depending on the requirements on the etched profile, the durations of the individual passivation and etching cycles are in the range of a few seconds up to several minutes. The profiles achieved with this etching process crucially depend on the flow of reactants, i.e. CF monomeres during the passivation cycle, and ions and fluorine radicals during the etching cycle, to the bottom of the profile, especially for profiles with high aspect ratio. With regard to the predictability of the etching processes, knowledge of the fundamental effects taking place during a gas chopping etching process, and their impact onto the resulting profile is required. For this purpose in the context of this work, a model for the description of the profile evolution of such etching processes is proposed, which considers the reactions (etching or deposition) at the sample surface on a phenomenological basis. Furthermore, the reactant transport inside the etching trench is modelled, based on angular distribution functions and on absorption probabilities at the sidewalls and bottom of the trench. A comparison of the simulated profiles with corresponding experimental profiles reveals that the proposed model reproduces the experimental profiles, if the angular distribution functions and absorption probabilities employed in the model is in agreement with data found in the literature. Therefor the model developed in the context of this work is an adequate description of the effects taking place during a gas chopping plasma etching process.

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

Numerical Simulation of Electroosmotic Flow with Step Change in Zeta Potential

Electroosmotic flow is a convenient mechanism for transporting polar fluid in a microfluidic device. The flow is generated through the application of an external electric field that acts on the free charges that exists in a thin Debye layer at the channel walls. The charge on the wall is due to the chemistry of the solid-fluid interface, and it can vary along the channel, e.g. due to modification of the wall. This investigation focuses on the simulation of the electroosmotic flow (EOF) profile in a cylindrical microchannel with step change in zeta potential. The modified Navier-Stoke equation governing the velocity field and a non-linear two-dimensional Poisson-Boltzmann equation governing the electrical double-layer (EDL) field distribution are solved numerically using finite control-volume method. Continuities of flow rate and electric current are enforced resulting in a non-uniform electrical field and pressure gradient distribution along the channel. The resulting parabolic velocity distribution at the junction of the step change in zeta potential, which is more typical of a pressure-driven velocity flow profile, is obtained.

Enhancing fault management performance of two-step QoS routing algorithms in GMPLS networks

In this paper a novel methodology aimed at minimizing the probability of network failure and the failure impact (in terms of QoS degradation) while optimizing the resource consumption is introduced. A detailed study of MPLS recovery techniques and their GMPLS extensions are also presented. In this scenario, some features for reducing the failure impact and offering minimum failure probabilities at the same time are also analyzed. Novel two-step routing algorithms using this methodology are proposed. Results show that these methods offer high protection levels with optimal resource consumption

Academics' online presence guidelines: A four step guide to taking control of your visibility

OpenUCT published Academics' online presence guidelines: A four step guide to taking control of your visibility in 2012.

Step by Step. 'Paso a paso'.

Se desarrolla un proyecto de innovación educativa que trata de promoverle uso del ingles en el aula de Infantil y de Primaria, de forma natural, fluida y lo más práctica posible. Para ello se desarrollan actividades que estimulen la expresión y la comprensión oral y los procedimientos que ayuden a comunicarse en una segunda lengua. El proyecto educativo se caracteriza por tener como meta una educación bilingüe, para ello se implica parte del profesorado en una realidad social y cultural existente, y a los padres para que el proyecto tenga continuidad en el ámbito familiar. Se han utilizado juegos didácticos, puzzles, fichas de aprendizaje, murales y dibujos ilustrativos, fotografías y cuentos en ingles. En general se ha alcanzado el objetivo de introducir el bilingüismo al ámbito escolar. La participación del profesorado es total, pero donde mejores resultados se han obtenido ha sido en Educación Infantil. La evaluación ha sido continua en todas las áreas impartidas, pero sobretodo en la de lengua inglesa. El proyecto tanto en su confección, como en su desarrollo e implantación ha favorecido el trabajo en equipo, y el amor de los alumnos y alumnas a la lengua inglesa.

Step into--the stone age.

Retrocedamos dos millones de años, a la Edad de Piedra y descubriremos como eran los ancestros de los modernos humanos. Dónde vivían los homínidos, como se agrupaban para cazar caballos, bisontes, renos, mamuts peludos que vagaban en grandes manadas por la tundra y las praderas. Se alimentaban de semillas, bayas, frutos secos, raíces, y ya tenían animales domesticados. Nos maravilla las buenas herramientas y armas que fabricaban con distintos materiales y que les ayudaba en su supervivencia. Una serie de actividades prácticas ayuda a los niños a recrear este mundo de la Edad de Piedra.

Step by wicked step.

En una tormentosa noche, unos estudiantes descubren en una abandonada habitación secreta, un misteriosos diario. Éste cuenta la historia de un chico llamado Richard Clayton Harwick que toma la decisión de huir de su casa por la aversión que le tiene su padrastro. Los muchachos ven reflejada en esta historia, su situación personal y familiar, sienten que todos ellos se encuentran con los mismos problemas,temores y preocupaciones de tener unos padres divorciados o que han vuelto a casarse.

Amazing science experiments : 150 easy projects using everyday materials, demostrated step by step in 1300 photographs.

Colección de ciento cincuenta experimentos que explican hechos y procesos científicos, y demuestran cómo funcionan las máquinas. Cada experimento se introduce, describe y explica, y esta información no sólo permite al usuario trabajar con confianza, sino que también proporciona una gran cantidad de conocimiento científico adicional para los niños de ocho a doce años. Dividido en cuatro secciones, cada una explora con un tema cotidiano diversas áreas especializadas de la ciencia: nuestra tierra inquieta, maravillas naturales cerca de casa, maravillas físicas y materiales, viajes y transporte.

New maths frameworking: Step-Up Workbook 1.

Este libro asegura una transición sin problemas desde el nivel de enseñanza primaria Key Stage 2 a Key Stage 3 (enseñanza secundaria), las ilustraciones basadas en las preguntas hacen que los conceptos básicos sean fáciles de entender y recordar. Los temas del libro son: entendiendo los números (ordenando los números, contando), la suma, la resta, fracciones (mitades y cuartos), medidas de longitud y tiempo (midiendo en metros, midiendo en centímetros, la era digital), entendiendo las formas (lados y esquinas), multiplicación y división, medidas de peso, capacidad y tiempo.

New maths frameworking: Step-Up Workbook 3.

Este libro asegura una transición sin problemas desde el nivel de enseñanza primaria Key Stage 2 a Key Stage 3 (enseñanza secundaria), las ilustraciones basadas en las preguntas hacen que los conceptos básicos sean fáciles de entender y recordar. Los temas del libro son: números y álgebra (ordenando números, números negativos), fracciones y decimales (fracción de un número, décimas como decimales), suma y resta, multiplicación y división, dinero (libras y peniques), medidas de longitud y tiempo (midiendo en milímetros, usando unidades métricas de longitud, perímetro, área), ¿formas regulares o irregulares?, medidas de peso, capacidad y tiempo (gramos y kilogramos, fracciones de un litro).

Spontaneous Meta-Arithmetic as the First Step Toward School Algebra. 'La meta-aritmética espontánea como el primer paso hacia el álgebra escolar'.

Resumen basado en el de la publicación