Epidemiologia, patogenia, diagnóstico, prevenção e controle da febre aftosa.

Com um rebanho de aproximadamente 200 milhões de cabeças e na primeira posição mundial em exportações de carnes, a pecuária bovina brasileira destaca-se pela importância estratégica na economia nacional. Considerando os valores expressivos oriundos da atividade do agronegócio, torna-se fundamental a adoção de medidas que contribuam para o melhoramento dos aspectos sanitários na cadeia produtiva. Nesse contexto, salientam-se medidas de vigilância e controle da febre aftosa, pois esta é a principal barreira sanitária imposta pelos países importadores, que podem decretar o embargo de produtos de origem animal. O conhecimento sobre o agente etiológico e o comportamento da doença são imprescindíveis para traçar estratégias de controle e tomada de decisões em casos de surtos, visto que a febre aftosa é uma enfermidade infecciosa viral que apresenta alta capacidade de disseminação e grande impacto, em razão das perdas na produção de carne e leite e das conseqüências políticas, sociais e econômicas associadas. Por meio desta série Documentos procura-se reforçar aos produtores, acadêmicos de ciências agrárias e demais envolvidos na cadeia produtiva agropecuária a importância do controle da febre aftosa nos rebanhos. São descritas a etiologia, epidemiologia e patogenia da doença, bem como as formas de diagnóstico e os aspectos de prevenção e controle.

Manejo e preparo de áreas submetidas a pousio com Pueraria phaseoloides: efeitos sobre o solo e cultura do milho.

A possibilidade de se produzir grãos por meio do aperfeiçoamento do sistema tradicional de cultivo, diminuindo o período de pousio natural, além de propiciar a obtenção de maiores produtividades, permitirá a diminuição da área destinada às culturas anuais e a redução da pressão sobre a floresta, liberando a mão-de-obra familiar para atividades mais rentáveis. A substituição do pousio natural pelo pousio com a leguminosa Pueraria phaseoloides vem sendo estudada por ser uma prática acessível ao pequeno produtor. Ao final do período de descanso, entretanto, face ao grande volume de fitomassa resultante, a reincorporação dessas áreas representa um problema prático adicional e uma barreira para a adoção desta prática. O efeito do pousio com a puerária e diferentes formas de preparo de área sobre o solo e cultivo do milho e feijão está sendo estudado pela Embrapa Acre, em área de um pequeno agricultor do Projeto de Assentamento Dirigido Pedro Peixoto, no município de Plácido de Castro, AC.

Sistemas de libertação de fármacos ativados por estímulos físicos e químicos administrados por via transdérmica

Projeto de Pós-Graduação/Dissertação apresentado à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Ciências Farmacêuticas

Farmacocinética do paracetamol

Projeto de Pós-Graduação/Dissertação apresentado à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Ciências Farmacêuticas

Investigation of an electron string ion source with field emission cathode

The string mode of operation for an electron beam ion source uses axially oscillating electrons in order to reduce power consumption, also simplifying the construction by omitting the collector with cooling requirements and has been called electron string ion source (ESIS). We have started a project (supported by INTAS and GSI) to use Schottky field emitting cathode tips for generating the electron string. The emission from these specially conditioned tips is higher by orders of magnitude than the focused Brillouin current density at magnetic fields of some Tesla and electron energies of some keV. This may avoid the observed instabilities in the transition from axially oscillating electrons to the string state of the electron plasma, opening a much wider field of possible operating parameters for an ESIS. Besides the presentation of the basic features, we emphasize in this paper a method to avoid damaging of the field, emission tip by backstreaming ions. (C) 2008 American Institute of Physics.

Barrier height variations and interface properties of PtSi/Si structures

To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400 degrees C to 700 degrees C) to form PtSi. The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20-290 K) over which the I-V characteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance-voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide-silicon interface. The forward C-V characteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.

Variable temperature, variable-gap Otto prism coupler for use in a vacuum environment

The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures. (C) 2000 American Institute of Physics. [S0034-6748(00)02411-4].

Interface mediated resistive switching in epitaxial NiO nanostructures

We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of similar to 10(3) at a read voltage of similar to+0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.

Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers

Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900 °C for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900 °C, indicating long-range diffusion of phosphorus (~38 µm), SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology. © 2009 IEEE.

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

OPTIMIZATION OF THE SLOW-MODE PLASMON POLARITON IN LIGHT-EMITTING TUNNEL-JUNCTIONS

Light emitted from metal/oxide/metal tunnel junctions can originate from the slow-mode surface plasmon polariton supported in the oxide interface region. The effective radiative decay of this mode is constrained by competition with heavy intrinsic damping and by the need to scatter from very small scale surface roughness; the latter requirement arises from the mode's low phase velocity and the usual momentum conservation condition in the scattering process. Computational analysis of conventional devices shows that the desirable goals of decreased intrinsic damping and increased phase velocity are influenced, in order of priority, by the thickness and dielectric function of the oxide layer, the type of metal chosen for each conducting electrode, and temperature. Realizable devices supporting an optimized slow-mode plasmon polariton are suggested. Essentially these consist of thin metal electrodes separated by a dielectric layer which acts as a very thin (a few nm) electron tunneling barrier but a relatively thick (several 10's of nm) optically lossless region. (C) 1995 American Institute of Physics.

PHOTOSIGNAL ENHANCEMENT IN AL-GAAS DIODES DUE TO SURFACE-PLASMONS AND GUIDED-WAVE MODES

Light of wavelength 632.8 nm and p-polarization is incident on a prism-air gap (varied from 0.7 to 7 mum)-Al-GaAs arrangement. Both the photosignal generated by the Schottky diode and the reflectance are measured as a function of the internal angle of incidence in the prism. There is significant, well-defined enhancement of the photosignal, up to a factor of approximately 7.5, associated with two different types of enhanced absorption modes. For air gaps <1.5 mum there is photosignal enhancement due to an enhanced absorption feature (reflectance dip) that occurs at an angle of incidence just above critical angle in the prism; this feature corresponds to the excitation of a surface plasmon polariton at the Al-air interface. For air gaps > 1 mum there are between one and ten photoresponse peaks at input angles less than the critical angle. The corresponding enhanced absorption features are due to leaky guided wave modes set up in the air gap.

INFRARED SURFACE-PLASMONS ON PLATINUM SILICIDE

It is shown that surface plasmons (SPs) are supported on thin PtSi films. Using a prism-air gap-sample configuration, p-polarised infra-red light (3.39-mu-m) has been coupled with approximately 95% efficiency to SPs on the silicide electrode of PtSi-Si Schottky barrier structures. Stimulating SPs offers both a means of optically characterising silicide films and of enhancing optical absorption with a view to significantly increasing the Schottky barrier photoresponse.

Local conductance: A means to extract polarization and depolarizing fields near domain walls in ferroelectrics

Conducting atomic force microscopy images of bulk semiconducting BaTiO3 surfaces show clear stripe domain contrast. High local conductance correlates with strong out-of-plane polarization (mapped independently using piezoresponse force microscopy), and current- voltage characteristics are consistent with dipole-induced alterations in Schottky barriers at the metallic tip-ferroelectric interface. Indeed, analyzing current-voltage data in terms of established Schottky barrier models allows relative variations in the surface polarization, and hence the local domain structure, to be determined. Fitting also reveals the signature of surface-related depolarizing fields concentrated near domain walls. Domain information obtained from mapping local conductance appears to be more surface-sensitive than that from piezoresponse force microscopy. In the right materials systems, local current mapping could therefore represent a useful complementary technique for evaluating polarization and local electric fields with nanoscale resolution.

Estudo de sistemas de protecção térmica húmidos sujeitos a condições de incêndio

O presente trabalho tem como principal objectivo o estudo e a interpretação dos mecanismos de transferência de calor e massa no interior de um meio poroso húmido actuando como barreira térmica de protecção em condições de incêndio, visando, sobretudo, melhorar o desempenho destes sistemas. A barreira térmica estudada é constituída por camadas de fibra de vidro, cuja face exposta à chama é protegida por uma folha de alumínio perfurada. A realização deste estudo envolveu a concepção, realização e operação de uma montagem experimental, com a qual se obteve a evolução temporal da temperatura e da taxa de evaporação de água no interior de uma amostra da barreira térmica, submetida à acção directa de uma chama. A análise do processo de protecção foi complementada com resultados obtidos por simulação numérica do processo, designadamente a evolução das propriedades térmicas, que determinam os mecanismos de transferência de calor e massa no interior da barreira. Para esse efeito foi desenvolvido um modelo matemático de simulação do processo de protecção para as barreiras em estudo, que permitiu obter resultados que acompanham bem as evoluções verificadas nos ensaios experimentais. A barreira térmica estudada mostrou claramente possuir um bom desempenho no processo de protecção, face às barreiras térmicas secas. Com a realização deste estudo identificaram-se e quantificaram-se os mecanismos de transferência de calor e massa dominantes nas diversas fases do processo de protecção, o que permitiu extrair conclusões valiosas quanto às características dos meios porosos que contribuem para o seu bom desempenho como barreiras térmicas húmidas.