Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers
Data(s) |
01/02/2009
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Resumo |
Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900 °C for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900 °C, indicating long-range diffusion of phosphorus (~38 µm), SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology. © 2009 IEEE.<br/> |
Identificador | |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Liao , S , Bain , M , Baine , P , McNeill , D , Armstrong , M & Gamble , H 2009 , ' Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers ' IEEE Transactions on Semiconductor Manufacturing , vol 22 , no. 1 , 4773502 , pp. 80-87 . DOI: 10.1109/TSM.2008.2010734 |
Palavras-Chave | #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering #/dk/atira/pure/subjectarea/asjc/2200/2209 #Industrial and Manufacturing Engineering #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics |
Tipo |
article |