Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

A bidirectionall diode-pumped, passively mode-locked Nd : YVO4 ring laser with a low-temperature-grown semiconductor saturable absorber mirror

We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperature-grown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 x 200 mW.

Experiments of a diode-pumped Nd : GdVO4/LT-GaAs Q-switched and mode-locked laser

A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 750 MHz. The laser properties of the operational parameters on the pump power were also investigated experimentally.

GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns, was obtained.

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.

Contrastive study of two SESAMs for passive mode-locking in Nd:YVC>4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

Microelements in Potato and Lily Samples Studied by Laser-Induced Breakdown spectroscopy Technology

A LIBS setup was built in the Institute of Modern Physics. In our experiments, LIBS spectra produced by infrared radiation of Nd : YAG nanosecond laser with 100 and 150 mJ pulse energy, respectively, were measured by fiber optic spectrometer in the ranges of 230-430 run and 430-1080 nm with a delay time of 1.7 and gate width of 2 ms for potato and lily samples prepared by vacuum freeze-dried technique. The lines from different metal elements such as K, Ca, Na, Mg, Fe, Al, Mn and Ti, and nonmetal elements such as C, N, O and H, and some molecular spectra from C-2, CaO, and CN were identified according to their wavelengths. The relative content of the six microelements, Ca, Na, K, Fe, Al, and Mg in the samples were analyzed according to their representative line intensities. By comparison we found that there are higher relative content of Ca and Na in lily samples and higher relative content of Mg in potato samples. The experimental results showed that LIBS technique is a fast and effective means for measuring and comparing the contents of microelements in plant samples.

基于激光诱导击穿光谱技术的铝合金成分定量分析；Quantitative analysis of element concentration in Al alloy by using laser-induced breakdown spectroscopy

利用Nd:YAG激光器输出的532nm激光束对位于空气中的标准变形铝合金样品进行烧蚀产生了激光诱导等离子体.对测量的230—440nm波长范围的光谱进行了谱线标定,同时基于自由定标方法对样品成分进行了定量分析,确定了样品中的元素含量.分析结果与标准值具有较好的一致性.

YAG∶Nd中Pr,Sm,Dy杂质对其光谱的影响

采用溶胶 -凝胶法合成了YAG∶Nd ,Re(Re =Pr,Sm ,Dy)系列化合物 ,研究了它们的光谱性质 .结果表明 :Pr3 + ,Sm3 + ,Dy3 + 对YAG基质中Nd3 + 的发光具有猝灭作用 ,属于有害杂质 ,在激光晶体原料中必须除去

YAG:Nd,Ho光谱性质的研究

YAG是一种多用途的激光基质材料。由于YAG的机械、热学和光学等物化综合性能良好,迄今为止它仍是最佳的掺稀土离子的固体基质材料,特别是Nd:YAG能在室温下以四能级方式、脉冲或连续工作,阈值低,效率高,是应用最广泛的激光材料之一。

(Nd,Ce):YAG晶体的激光性能

本文给出了(Nd,Ce) :YAG 晶体激光性能的实验结果。与优质 Nd:YAG 晶体比较,我们现在得到的双掺晶体的静态脉冲激光效率提高了80%,激光阈值也显著降低,并具有抗紫外特性。双掺晶体激光性能的大幅度提高,说明在 YAG 晶体里 Ce~(3+)是 Nd~(3+)很好的敏化离子。

Fine structure in the time of flight distribution of C2 in laser produced plasma from graphite

Time resolved optical emission spectroscopy is employed to study the expansion dynamics of C2 species in a graphite plasma produced during the Nd : YAG ablation. At low laser fluences a single peak distribution with low kinetic energy is observed. At higher fluences a twin peak distribution is found. It has been noted that these double peak time of flight distribution splits into a triple peak structure at distances >_ 17mm from the target surface. The reason for the occurrence of multiple peak is due to different formation mechanisms of C2 species

Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 degrees C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu(2)O(3), with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3457784]