Larval development of Micippa platipes Ruppell, 1930, reared under laboratory conditions (Crustacea, Decapoda, Majidae)

The ovigerous female of Micippa platipes Ruppell, 1830, captured from Buleji (Karachi, Pakistan) on February 7, 1993 and was kept under the laboratory conditions. On February 27, 1993 larvae were hatched in prezoeal stage. The presoeal stage of M. platipes passed through two zoeal stages within three to five days at room temperature (17-20C). The larvae are described, illustrated and compared with the larval account of Micippa thalia (Herbst, 1803) given by Kurata, 1969.

长江上游特有鱼类受威胁及优先保护顺序的定量分析

根据本课题组1997~2002年野外渔获物调查数据并结合相关文献资料,运用濒危系数、遗传损失系数和物种价值系数对长江上游16种特有鱼类的优先保护顺序进行了定量分析.结果表明,达到一级急切保护的有达氏鲟(Acipenser dabryanus)、鲈鲤(Percocypris pingi)2种;达到二级急切保护的有宜宾鲴(Xenocypris fangi)、齐口裂腹鱼(Schizothorax prenanti)、四川白甲鱼(Onychostoma angustistomata)及云南鲴(Xenocypris

Description of a new species of the genus Tylopharynx (Nemata : Diplogasteroidea), T-clariamphida sp n., with a redescription of T-foetida (Butschli, 1874) Goffart, 1930

Tylopharynx clariamphida sp. n. is described from muddy sand collected in Anhui Province, China. It can be distinguished from T foetida (Butschli, 1874), the type and only species of the genus, by numerous characters: having 24 to 26 prominent and clearly separated longitudinal ridges, a higher lip region with no hint of a cephalic framework, more prominent amphidial foveae in lateral view, wider and more posteriorly located amphidial apertures, smaller basal knobs of stoma, longer metacorpus, more enlarged phasmids, shorter spicules with shorter digitate terminus, shorter reflexed part of testis, and thicker gubernaculum with more angular shape. For comparison, an expanded description is given for T foetida from Belgium, and SEM photographs of both species are provided.

Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.