950 resultados para projective plane


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We study exact boundary controllability for a two-dimensional wave equation in a region which is an angular sector of a circle or an angular sector of an annular region. The control, of Neumann type, acts on the curved part of the boundary, while in the straight part we impose homogeneous Dirichlet boundary condition. The initial state has finite energy and the control is square integrable. (c) 2005 Elsevier B.V. All rights reserved.

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This work presents a methodology for elastic-plastic fracture reliability analysis of plane and axisymmetric structures. The structural reliability analysis is accomplished by means of the FORM analytical method. The virtual crack extension technique based on a direct minimization of potencial energy is utililized for the calculation of the energy release rate. Results are presented to illustrate the performance of the adopted methodology.

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The Green function for a spin-1/2 charged particle in the presence of an external plane wave electromagnetic field is calculated by algebraic techniques in terms of the free-particle Green function.

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This paper investigates properties of integer programming models for a class of production planning problems. The models are developed within a decision support system to advise a sales team of the products on which to focus their efforts in gaining new orders in the short term. The products generally require processing on several manufacturing cells and involve precedence relationships. The cells are already (partially) committed with products for stock and to satisfy existing orders and therefore only the residual capacities of each cell in each time period of the planning horizon are considered. The determination of production recommendations to the sales team that make use of residual capacities is a nontrivial optimization problem. Solving such models is computationally demanding and techniques for speeding up solution times are highly desirable. An integer programming model is developed and various preprocessing techniques are investigated and evaluated. In addition, a number of cutting plane approaches have been applied. The performance of these approaches which are both general and application specific is examined.

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The goal of the present work is to analyze space missions that use the terrestrial atmosphere to accomplish orbital maneuvers that involve a plane change. A set of analytical solutions is presented for the variation of the orbital elements due to a single passage through the atmosphere, assuming that the interval the spacecraft travels through the atmosphere is not too large. The study considers both the lift influence on the spacecraft orbit as well as drag. The final equations are tested with numerical integration and can be considered in accordance with the numerical results whenever the perigee height is larger than a critical value. Next, a numerical study of the ratio between the velocity increment required to correct the semimajor axis decay due to the atmospheric passage and the velocity variation required to obtain the change in the inclination is also presented. This analysis can be used to decide if a maneuver passing through the atmosphere can decrease the fuel consumption of the mission and, in the cases where this technique can be used, if a multiple passage is more efficient than a single passage.

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In the present work we study an anisotropic layered superconducting film of finite thickness. The film surfaces are considered parallel to the be face of the crystal. The vortex lines are oriented perpendicular to the film surfaces and parallel to the superconducting planes. We calculate the local field and the London free energy for this geometry. Our calculation is a generalization of previous works where the sample is taken as a semi-infinite superconductor. As an application of this theory we investigate the flux spreading at the super conducting surface.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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We give a description of the dual varieties of all developables of osculating linear spaces to a projective curve in terms of the higher order dual varieties of the curve, in arbitrary characteristic. We also determine for these varieties the inseparable degrees of the projections from the conormal varieties onto their dual varieties.

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A quantizable worldsheet action is constructed for the superstring in a super-symmetric plane wave background with Ramond-Ramond flux. The action is manifestly invariant under all isometries of the background and is an exact worldsheet conformal field theory. © SISSA/ISAS 2002.

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Using the U(4) formalism developed ten years ago, the worldsheet action for the superstring in Ramond-Ramond plane wave backgrounds is expressed in a manifestly N = (2,2) superconformally invariant manner. This simplifies the construction of consistent Ramond-Ramond plane wave backgrounds and eliminates the problems associated with light-cone interaction point operators. © SISSA/ISAS 2002.

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We construct explicit multivortex solutions for the complex sine-Gordon equation (the Lund-Regge model) in two Euclidean dimensions. Unlike the previously found (coaxial) multivortices, the new solutions comprise n single vortices placed at arbitrary positions (but confined within a finite part of the plane.) All multivortices, including the single vortex, have an infinite number of parameters. We also show that, in contrast to the coaxial complex sine-Gordon multivortices, the axially-symmetric solutions of the Ginzburg-Landau model (the stationary Gross-Pitaevskii equation) do not belong to a broader family of noncoaxial multivortex configurations.

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Let X : ℝ2 → ℝ2 be a C1 map. Denote by Spec(X) the set of (complex) eigenvalues of DXp when p varies in ℝ2. If there exists ε > 0 such that Spec(X) ∩ (-ε, ε) = ∅, then X is injective. Some applications of this result to the real Keller Jacobian conjecture are discussed.

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Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.