538 resultados para UHV-STM


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Vicinal Ge(100) is the common substrate for state of the art multi-junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). While triple junction solar cells based on Ge(100) present efficiencies mayor que 40%, little is known about the microscopic III-V/Ge(100) nucleation and its interface formation. A suitable Ge(100) surface preparation prior to heteroepitaxy is crucial to achieve low defect densities in the III-V epilayers. Formation of single domain surfaces with double layer steps is required to avoid anti-phase domains in the III-V films. The step formation processes in MOVPE environment strongly depends on the major process parameters such as substrate temperature, H2 partial pressure, group V precursors [1], and reactor conditions. Detailed investigation of these processes on the Ge(100) surface by ultrahigh vacuum (UHV) based standard surface science tools are complicated due to the presence of H2 process gas. However, in situ surface characterization by reflection anisotropy spectroscopy (RAS) allowed us to study the MOVPE preparation of Ge(100) surfaces directly in dependence on the relevant process parameters [2, 3, 4]. A contamination free MOVPE to UHV transfer system [5] enabled correlation of the RA spectra to results from UHV-based surface science tools. In this paper, we established the characteristic RA spectra of vicinal Ge(100) surfaces terminated with monohydrides, arsenic and phosphorous. RAS enabled in situ control of oxide removal, H2 interaction and domain formation during MOVPE preparation.

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The capping of epitaxially grown Quantum Dots (QD) is a key process in the fabrication of devices based on these nanostructures because capping can significantly affect the QDs morphology [3]. We have studied the QD morphology after capping in order to better understand the role of the capping process. We have grown real structures and compared the QD morphology obtained by cross-sectional Scanning Tunneling Microscopy (X-STM) with the morphology of QDs that were virtually grown in simulations based on a Kinetic Monte Carlo model (KMC) [1].

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The conductance of atomic-sized metallic point contacts is shown to be strongly voltage dependent due to quantum interference with impurities even in samples with low impurity concentrations. Transmission through these small contacts depends not only on the local atomic structure at the contact but also on the distribution of impurities or defects within a coherence length of the contact. In contrast with other mesoscopic systems we show that transport through atomic contacts is coherent even at room temperature. The use of a scanning tunneling microscope (STM) makes it possible to fabricate one atom contacts of gold whose transmission can be controlled by manipulation of the contact allowing inelastic spectroscopy in such small contacts.

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Using a scanning tunnelling microscope or mechanically controllable break junction it has been shown that it is possible to control the formation of a wire made of single gold atoms. In these experiments an interatomic distance between atoms in the chain of ∼3.6 Å was reported which is not consistent with recent theoretical calculations. Here, using precise calibration procedures for both techniques, we measure the length of the atomic chains. Based on the distance between the peaks observed in the chain length histogram we find the mean value of the interatomic distance before chain rupture to be 2.5±0.2 Å. This value agrees with the theoretical calculations for the bond length. The discrepancy with the previous experimental measurements was due to the presence of He gas, that was used to promote the thermal contact, and which affects the value of the work function that is commonly used to calibrate distances in scanning tunnelling microscopy and mechanically controllable break junctions at low temperatures.

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Electronic transport at finite voltages in free-standing gold atomic chains of up to seven atoms in length is studied at low temperatures using a scanning tunneling microscope. The conductance vs voltage curves show that transport in these single-mode ballistic atomic wires is nondissipative up to a finite voltage threshold of the order of several mV. The onset of dissipation and resistance within the wire corresponds to the excitation of the atomic vibrations by the electrons traversing the wire and is very sensitive to strain.

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Using a scanning tunnel microscope or mechanically controllable break junctions atomic contacts for Au, Pt, and Ir are pulled to form chains of atoms. We have recorded traces of conductance during the pulling process and averaged these for a large number of contacts. An oscillatory evolution of conductance is observed during the formation of the monoatomic chain suggesting a dependence on the numbers of atoms forming the chain being even or odd. This behavior is not only observed for the monovalent metal Au, as was predicted, but is also found for the other chain-forming metals, suggesting it to be a universal feature of atomic wires.

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Recent years have shown steady progress towards molecular electronics, in which molecules form basic components such as switches, diodes and electronic mixers. Often, a scanning tunnelling microscope is used to address an individual molecule, although this arrangement does not provide long-term stability. Therefore, metal–molecule–metal links using break-junction devices have also been explored; however, it is difficult to establish unambiguously that a single molecule forms the contact. Here we show that a single hydrogen molecule can form a stable bridge between platinum electrodes. In contrast to results for organic molecules, the bridge has a nearly perfect conductance of one quantum unit, carried by a single channel. The hydrogen bridge represents a simple test system in which to understand fundamental transport properties of single-molecule devices.

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Scanning tunneling microscopy permits us to image the Kondo resonance of a single magnetic atom adsorbed on a metallic surface. When the magnetic impurity is placed at the focus of an elliptical quantum corral, a Kondo resonance has been recently observed both on top of the impurity and on top of the focus where no magnetic impurity is present. This projection of the Kondo resonance to a remote point on the surface is referred to as quantum mirage. We present a quantum mechanical theory for the quantum mirage inside an ideal quantum corral and predict that the mirage will occur in corrals with shapes other than elliptical.

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A scanning tunneling microscope can probe the inelastic spin excitations of a single magnetic atom in a surface via spin-flip assisted tunneling in which transport electrons exchange spin and energy with the atomic spin. If the inelastic transport time, defined as the average time elapsed between two inelastic spin flip events, is shorter than the atom spin-relaxation time, the scanning tunnel microscope (STM) current can drive the spin out of equilibrium. Here we model this process using rate equations and a model Hamiltonian that describes successfully spin-flip-assisted tunneling experiments, including a single Mn atom, a Mn dimer, and Fe Phthalocyanine molecules. When the STM current is not spin polarized, the nonequilibrium spin dynamics of the magnetic atom results in nonmonotonic dI/dV curves. In the case of spin-polarized STM current, the spin orientation of the magnetic atom can be controlled parallel or antiparallel to the magnetic moment of the tip. Thus, spin-polarized STM tips can be used both to probe and to control the magnetic moment of a single atom.

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Digital magnetic recording is based on the storage of a bit of information in the orientation of a magnetic system with two stable ground states. Here we address two fundamental problems that arise when this is done on a quantized spin: quantum spin tunneling and backaction of the readout process. We show that fundamental differences exist between integer and semi-integer spins when it comes to both reading and recording classical information in a quantized spin. Our findings imply fundamental limits to the miniaturization of magnetic bits and are relevant to recent experiments where a spin-polarized scanning tunneling microscope reads and records a classical bit in the spin orientation of a single magnetic atom.

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The electronic gap structure of the organic molecule N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine, also known as TPD, has been studied by means of a Scanning Tunneling Microscope (STM) and by Photoluminescence (PL) analysis. Hundreds of current-voltage characteristics measured at different spots of the sample show the typical behavior of a semiconductor. The analysis of the curves allows to construct a gap distribution histogram which reassembles the PL spectrum of this compound. This analysis demonstrates that STM can give relevant information, not only related to the expected value of a semiconductor gap but also on its distribution which affects its physical properties such as its PL.

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The adsorption of nitric oxide (NO) on a Pt (111) surface modified with irreversible adsorbed bismuth adatoms is reported. While the voltammetric results reveal a close interaction between the two co-adsorbed compounds. In-situ infrared spectroscopy and scanning tunnelling microscopy indicate the formation of segregated adlayers. Formation of compressed Bi adlayers with modified redox properties is proposed to reconcile both results. This agrees with the observation of Bi islands in the STM images when NO is coadsorbed, not observed in the absence of NO.