Height control of self-assembled quantum dots
Data(s) |
2014
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Resumo |
The capping of epitaxially grown Quantum Dots (QD) is a key process in the fabrication of devices based on these nanostructures because capping can significantly affect the QDs morphology [3]. We have studied the QD morphology after capping in order to better understand the role of the capping process. We have grown real structures and compared the QD morphology obtained by cross-sectional Scanning Tunneling Microscopy (X-STM) with the morphology of QDs that were virtually grown in simulations based on a Kinetic Monte Carlo model (KMC) [1]. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Relação |
http://oa.upm.es/36770/1/INVE_MEM_2014_194261.pdf |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
8th International Conference on Quantum Dots (QD 2014) | 8th International Conference on Quantum Dots (QD 2014) | 11/05/2014 - 16/05/2014 | Pisa, Italy |
Palavras-Chave | #Física |
Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |