Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Polyaniline/Pillared Montmorillonite Clay Composite Nanofibers

In situ polymerization of aniline is done inside the pillared clay matrix. The nonswellable pillared clay confined matrix allows efficient polymerization that leads to nanofibrous morphology. As a result high polymer order and crystallinity is attained and is evident from XRD patterns. The strong interaction between the clay layers and polyaniline (PANI) is understood from FTIR and DRS spectra. Additionally these analytical results suggest that the prepared PANI is in the doped state. The PANI/pillared clay nanocomposite formation gives additional thermal stability to the polymer backbone and is clear from the DTG curves.

Spectral and nonlinear optical characteristics of nanocomposites of ZnO-CdS

In this article, we present the spectral and nonlinear optical properties of ZnO–CdS nanocomposites prepared by colloidal chemical synthesis. The optical band gap (Eg) of the material is tunable between 2.62 and 3.84 eV. The emission peaks of ZnO–CdS nanocomposites change from 385 to 520 nm almost in proportion to changes in Eg. It is possible to obtain a desired luminescence color from UV to green by simply adjusting the composition. The nonlinear optical response of these samples is studied by using nanosecond laser pulses from a tunable laser at the excitonic resonance and off-resonance wavelengths. The nonlinear response is wavelength dependent, and switching from saturable absorption (SA) to reverse SA (RSA) has been observed for samples as the excitation wavelength changes from the excitonic resonance to off-resonance wavelengths. Such a changeover in the sign of the nonlinearity of ZnO–CdS nanocomposites is related to the interplay of exciton bleach and optical limiting mechanisms. The ZnO–CdS nanocomposites show self-defocusing nonlinearity and good nonlinear absorption behavior at off-resonant wavelengths. The nonlinear refractive index and the nonlinear absorption increase with increasing CdS volume fraction at 532 nm. The observed nonlinear absorption is attributed to two photon absorption followed by weak free carrier absorption. The enhancement of the third-order nonlinearity in the composites can be attributed to the concentration of exciton oscillator strength. This study is important in identifying the spectral range and composition over which the nonlinear material acts as a RSA based optical limiter. ZnO–CdS is a potential nanocomposite material for the tunable light emission and for the development of nonlinear optical devices with a relatively small limiting threshold.

Polymer Nanocomposites: Crystallization, Reinforcement and Conductivity through SWNTs

The current research investigates the possibility of using single walled carbon nanotubes (SWNTs) as filler in polymers to impart several properties to the matrix polymer. SWNTs in a polymer matrix like poly(ethylene terephthalate) induce nucleation in its melt crystallization, provide effective reinforcement and impart electrical conductivity. We adopt a simple melt compounding technique for incorporating the nanotubes into the polymer matrix. For attaining a better dispersion of the filler, an ultrasound assisted dissolution-evaporation method has also been tried. The resulting enhancement in the materials properties indicates an improved disentanglement of the nanotube ropes, which in turn provides effective matrix-filler interaction. PET-SWNT nanocomposite fibers prepared through melt spinning followed by subsequent drawing are also found to have significantly higher mechanical propertiesas compared to pristine PET fiber.SWNTs also find applications in composites based on elastomers such as natural rubber as they can impart electrical conductivity with simultaneous improvement in the mechanical properties.

Laser Induced Photothermal Investigations on Thermal and Transport Properties of Certain Selected Photonic Materials

Discovery of coherent optical sources four decades ago has revolutionized all fields of scientific development. One of the path breaking applications of lasers is the emergence of various thermo optic techniques to unravel some of the mysteries of light matter interactions.Thermo optic technique is a valuable tool to evaluate optical and thermal properties of materials in solid,liquid and gaseous states .This technique can also be employed effectively in nondestructive quality evaluation. In this doctoral thesis , the use of photothermal techniques based on photoacoustic and photothermal deflection phenomena for the study of certain class of photonics materials such as semiconductors, nano metal dispersed ceramics, composites of conducting polymers and liquid crystals is elaborated.

Studies on Electrical and Thermal Properties of Certain Selected Photonic Materials

The present thesis is centered around the study of electrical and thermal properties of certain selected photonic materials.We have studied the electrical conduction mechanism in various phases of certain selected photonic materials and those associated with different phase transitions occurring in them. A phase transition leaves its own impressions on the key parameters like electrical conductivity and dielectric constant. However, the activation energy calculation reveals the dominant factor responsible for conduction process.PA measurements of thermal diffusivity in certain other important photonic materials are included in the remaining part of the research work presented in this thesis. PA technique is a promising tool for studying thermal diffusivities of solid samples in any form. Because of its crucial role and common occurrence in heat flow problems, the thermal diffusivity determination is often necessary and knowledge of thermal diffusivity can intum be used to calculate the thermal conductivity. Especially,knowledge of the thermal diffusivity of semiconductors is important due to its relation to the power dissipation problem in microelectronic and optoelectronic devices which limits their performances. More than that, the thermal properties, especially those of thin films are of growing interest in microelectronics and microsystems because of the heat removal problem involved in highly integrated devices. The prescribed chapter of the present theis demonstrates how direct measurement of thermal diffusivity can be carried out in thin films of interest in a simple and elegant manner using PA techniques. Although results of only representative measurements viz; thermal diffusivity values in Indium, Aluminium, Silver and CdS thin films are given here, evaluation of this quantity for any photonic and / electronic material can be carried out using this technique in a very simple and straight forward manner.

Photothermal and photoacoustic investigations on certain polymers and semi conducting materials

Material synthesizing and characterization has been one of the major areas of scientific research for the past few decades. Various techniques have been suggested for the preparation and characterization of thin films and bulk samples according to the industrial and scientific applications. Material characterization implies the determination of the electrical, magnetic, optical or thermal properties of the material under study. Though it is possible to study all these properties of a material, we concentrate on the thermal and optical properties of certain polymers. The thermal properties are detennined using photothermal beam deflection technique and the optical properties are obtained from various spectroscopic analyses. In addition, thermal properties of a class of semiconducting compounds, copper delafossites, arc determined by photoacoustic technique.Photothermal technique is one of the most powerful tools for non-destructive characterization of materials. This forms a broad class of technique, which includes laser calorimetry, pyroelectric technique, photoacollstics, photothermal radiometric technique, photothermal beam deflection technique etc. However, the choice of a suitable technique depends upon the nature of sample and its environment, purpose of measurement, nature of light source used etc. The polynler samples under the present investigation are thermally thin and optically transparent at the excitation (pump beam) wavelength. Photothermal beam deflection technique is advantageous in that it can be used for the detennination of thermal diffusivity of samples irrespective of them being thermally thick or thennally thin and optically opaque or optically transparent. Hence of all the abovementioned techniques, photothemlal beam deflection technique is employed for the successful determination of thermal diffusivity of these polymer samples. However, the semi conducting samples studied are themlally thick and optically opaque and therefore, a much simpler photoacoustic technique is used for the thermal characterization.The production of polymer thin film samples has gained considerable attention for the past few years. Different techniques like plasma polymerization, electron bombardment, ultra violet irradiation and thermal evaporation can be used for the preparation of polymer thin films from their respective monomers. Among these, plasma polymerization or glow discharge polymerization has been widely lIsed for polymer thin fi Im preparation. At the earlier stages of the discovery, the plasma polymerization technique was not treated as a standard method for preparation of polymers. This method gained importance only when they were used to make special coatings on metals and began to be recognized as a technique for synthesizing polymers. Thc well-recognized concept of conventional polymerization is based on molecular processcs by which thc size of the molecule increases and rearrangemcnt of atoms within a molecule seldom occurs. However, polymer formation in plasma is recognized as an atomic process in contrast to the above molecular process. These films are pinhole free, highly branched and cross linked, heat resistant, exceptionally dielectric etc. The optical properties like the direct and indirect bandgaps, refractive indices etc of certain plasma polymerized thin films prepared are determined from the UV -VIS-NIR absorption and transmission spectra. The possible linkage in the formation of the polymers is suggested by comparing the FTIR spectra of the monomer and the polymer. The thermal diffusivity has been measured using the photothermal beam deflection technique as stated earlier. This technique measures the refractive index gradient established in the sample surface and in the adjacent coupling medium, by passing another optical beam (probe beam) through this region and hence the name probe beam deflection. The deflection is detected using a position sensitive detector and its output is fed to a lock-in-amplifIer from which the amplitude and phase of the deflection can be directly obtained. The amplitude and phase of the deflection signal is suitably analyzed for determining the thermal diffusivity.Another class of compounds under the present investigation is copper delafossites. These samples in the form of pellets are thermally thick and optically opaque. Thermal diffusivity of such semiconductors is investigated using the photoacoustic technique, which measures the pressure change using an elcctret microphone. The output of the microphone is fed to a lock-in-amplificr to obtain the amplitude and phase from which the thermal properties are obtained. The variation in thermal diffusivity with composition is studied.

Design and fabrication of a photothermal spectrometer and investigations of multilayer thin films"

In this work we present the results of our attempt to build a compact photothermal spectrometer capable of both manual and automated mode of operation.The salient features of the system include the ability to analyse thin film, powder and polymer samples. The tool has been in use to investigate thermal, optical and transport properties. Binary and ternary semiconducting thin films were analysed for their thermal diffusivities. The system could perform thickness measurements nondestructively. Ion implanted semiconductors are widely studied for the effect of radiation induced defects. We could perform nondestructive imaging of defects using our spectrometer.The results reported in his thesis on the above in addition to studies on In2S3 and transparent conducting oxide ZnO have been achieved with this spectrometer. Various polymer samples have been easily analysed for their thermal diffusivities. The technique provided ease of analysis not achieved with conventional techniques like TGA and DSC. Industrial application of the tool has also been proved by analyzing defects of welded joints and adhesion of paints. Indigenization of the expensive lock-in-amplifier and automation has been the significant achievement in the course of this dissertation. We are on our way to prove the noise rejection capabilities of our PC LIA.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Spectral studies of naphthalocyanine (Nc) and rare earth phthalocyanine (RePc) molecules in an inorganic glassy borate matrix

Optical absorption and emission spectral studies of free and metal naphthalocyanine doped borate glass matrix are reported for the first time. Absorption spectra recorded in the UV- VIS-NIR region show the characteristic absorption bands, namely, the B-band and Q-band of the naphthalocyanine (Nc) molecule. Some of the important spectral parameters, namely, the optical absorption coefficient (α), molar extinction coefficient (ε) and absorption cross section (σa) of the principal absorption transitions are determined. Optical band gap (Eg) of the materials evaluated from the functional dependence of absorption coefficient on photon energy lies in the range 1.6 eV≤Eg≤2.1 eV. All fluorescence spectra except that of EuNc consist of an intense band in the 765 nm region corresponding to the excitation of Q-band. In EuNc the maximum fluorescence intensity band is observed at 824 nm. The intensity of the principal fluorescence band is maximum in ZnNc, whereas it is minimum in H2Nc. Radiative parameters of the principal fluorescence transitions corresponding to the Q-band excitation are also reported for the naphthalocyanine and phthalocyanine based matrices.

Photoacoustic investigation of doped InP using open cell configuration

An open cell photoacoustic (PA) configuration has been employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data have been evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a reduced value for thermal diffusivity in comparison with intrinsic InP. We also observed that, while the phase of the PA signal varies linearly with the square root of chopping frequency for doped samples, the intrinsic material does not exhibit such behaviour in the experimental frequency range. These results have been interpreted in terms of the heat generation and phonon assisted heat diffusion mechanisms in semiconductors.

Photoacoustic studies on n-type InP

We discuss an open photoacoustic cell study on sulfer-doped n-type InP wafer. The thermal diffusivity of the sample is evaluated from the phase data associated with the photoacoustic signal as a function of the modulation frequency under heat transmission configuration. Analysis is made on the basis of the Rosencwaig-Gersho theory and the results are compared with those from earlier reported photoacoustic studies of semiconductors. Our investigation clearly indicates that the instantaneous thermalization process is the major heat diffusion mechanism responsible for the photoacoustic signal generation in an InP sample.

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.