920 resultados para Radial gate
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This research is a self-study into my life as an athlete, elementary school teacher, leamer, and as a teacher educator/academic. Throughout the inquiry, I explore how my beliefs and values infused my lived experiences and ultimately influenced my constructivist, humanist, and ultimately my holistic teaching and learning practice which at times disrupted the status quo. I have written a collection of narratives (data generation) which embodied my identity as an unintelligent student/leamer, a teacher/learner, an experiential learner, a tenacious participant, and a change agent to name a few. As I unpack my stories and hermeneutically reconstruct their intent, I question their meaning as I explore how I can improve my teaching and learning practice and potentially effect positive change when instructing beginning teacher candidates at a Faculty of Education. At the outset I situate my story and provide the necessary political, social, and cultural background information to ground my research. I follow this with an in depth look at the elements that interconnect the theoretical framework of this self-study by presenting the notion of writing at the boundaries through auto ethnography (Ellis, 2000; Ellis & Bochner, 2004) and writing as a method of inquiry (Richardson, 2000). The emergent themes of experiential learning, identity, and embodied knowing surfaced during the data generation phase. I use the Probyn' s (1990) .. metaphor of locatedness to unpack these themes and ponder the question, Where is experience located? I deepen the exploration by layering Drake's (2007) KnowlDo/Be framework alongside locatedness and offer descriptions of learning moments grounded in pedagogical theories. In the final phase, I introduce thirdspace theory (Bhabha, 1994; Soja, 1996) as a space that allowed me to puzzle educational dilemmas and begin to reconcile the binaries that existed in my life both personally, and professionally. I end where I began by revisiting the questions that drove this study. In addition, Ireflect upon the writing process and the challenges that I encountered while immersed in this approach and contemplate the relevance of conducting a self-study. I leave the reader with what is waiting for me on the other side of the gate, for as Henry James suggested, "Experience is never limited, and it is never complete."
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Tesis (Maestro en Ciencias de la Ingeniería Eléctrica con Especialidad en Potencia) UANL, 2002.
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Tesis (Maestro en Ciencias de la Ingeniería Eléctrica con Especialidad en Potencia) U.A.N.L.
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Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.
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The Support Vector (SV) machine is a novel type of learning machine, based on statistical learning theory, which contains polynomial classifiers, neural networks, and radial basis function (RBF) networks as special cases. In the RBF case, the SV algorithm automatically determines centers, weights and threshold such as to minimize an upper bound on the expected test error. The present study is devoted to an experimental comparison of these machines with a classical approach, where the centers are determined by $k$--means clustering and the weights are found using error backpropagation. We consider three machines, namely a classical RBF machine, an SV machine with Gaussian kernel, and a hybrid system with the centers determined by the SV method and the weights trained by error backpropagation. Our results show that on the US postal service database of handwritten digits, the SV machine achieves the highest test accuracy, followed by the hybrid approach. The SV approach is thus not only theoretically well--founded, but also superior in a practical application.
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We had previously shown that regularization principles lead to approximation schemes, as Radial Basis Functions, which are equivalent to networks with one layer of hidden units, called Regularization Networks. In this paper we show that regularization networks encompass a much broader range of approximation schemes, including many of the popular general additive models, Breiman's hinge functions and some forms of Projection Pursuit Regression. In the probabilistic interpretation of regularization, the different classes of basis functions correspond to different classes of prior probabilities on the approximating function spaces, and therefore to different types of smoothness assumptions. In the final part of the paper, we also show a relation between activation functions of the Gaussian and sigmoidal type.
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Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁âxGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.
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La progressiva creació de l'Espai Europeu d'Educació Superior porta la Universitat de Girona a un procés de reflexió i renovació de l'organització acadèmica i docent dels estudis. Volem que la societat gironina participi activament en la definició de les noves titulacions que han d'oferir la formació adequada perquè els estudiants assoleixin amb èxit les competències professionals que el món laboral demana. Aquestes pàgines tenen l'objectiu de divulgar, a grans trets, el perquè, el què, el com i el quan de la reforma de l'educació superior que estem començant
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An image of Hartley Library reception with entrance gate, taken in 2009.
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En el presente trabajo se pretendió demostrar la importancia que tiene el ciudadano como agente de veeduría y control de las instancias Estatales, y que a través de los medios se facilita la postulación de las demandas que han sido encubadas y maduradas en espacios de discusión y debate político en instancias locales y regionales. Para esto se escogió el caso de la Rebelión de los Forajidos que tuvo lugar en Quito, Ecuador.
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El trauma de codo y la fractura de cúpula radial resultan ser un motivo de consulta frecuente en nuestro medio. Es común en nuestro medio que a pesar de tener radiografías de codo en las que se evidencia fractura de cúpula radial se solicite un TAC de codo. Consideramos que el TAC es una herramienta útil en algunos casos de fracturas de la cúpula radial, es decir, no se debe tomar de forma rutinaria el TAC de codo en los pacientes con fracturas de cúpula radial como es usual en nuestro medio. Existen pocos estudios que comparan la concordancia inter observador de las clasificaciones utilizadas para las fracturas de cúpula radial, pero, no existe en la literatura mundial un estudio que evalué las diferencias entre la clasificación de la fractura en base a radiografías y tomografía entre un grupo ortopedistas traumatólogos y sub-especialistas de miembro superior. La realización de este estudio permite elaborar guías de manejo de pacientes con fractura de cúpula radial en la que se racionalizara el uso del TAC de codo.
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Las fracturas de la cúpula radial corresponden a un tercio de todas las fracturas del codo en adultos (1), por lo que se toman radiografías o tomografías, sin embargo no existe literatura que soporte la realización de la tomografía como estudio complementario, por lo que preguntamos ¿La tomografía de codo cambia la conducta tomada previamente con radiografía en fracturas de cúpula radial? Se propone un estudio de concordancia, donde se evalúan las radiografías y tomografías por parte de dos cirujanos de codo, de pacientes con diagnóstico de fractura de cúpula radial valorados en urgencias de dos hospitales de tercer nivel de Bogotá desde enero 2011 a enero 2013. Se revisaron 116 historias, 99 cumplieron los criterios, las radiografías fueron revisadas por dos ortopedistas de codo quienes realizaron clasificación de Mason obteniendo un κ 1 (p˂ 0,00), propuesta de tratamiento postradiografía κ 0,934 (p˂ 0,000 IC95% 0.85, 1). Tratamiento post-tomografía de codo κ 0.949 (p˂ 0,00 IC95% 0.867,1). Concordancia intra-ortopedista de la conducta pre y post-tomografía hay cambio en la conducta del ortopedista 1 en 32.6% (κ 0.674 p˂ 0,00 IC95% 0.52, 0.818) y del ortopedista 2 en 36% (κ 0.64 p˂ 0,00 IC95% 0.452, 0.792). Se dividieron los pacientes en Mason I, II, III con concordancia considerable en los pacientes Mason I y III, mientras que en Mason II fue una concordancia aceptable lo que significa que el uso de tomografía de codo cambia la conducta en general pero sobretodo en pacientes clasificados Masson II.