A Multi-Objective Antenna Placement Genetic Algorithm for Matched Array Synthesis on Complex Platforms

A Multi-Objective Antenna Placement Genetic Algorithm (MO-APGA) has been proposed for the synthesis of matched antenna arrays on complex platforms. The total number of antennas required, their position on the platform, location of loads, loading circuit parameters, decoupling and matching network topology, matching network parameters and feed network parameters are optimized simultaneously. The optimization goal was to provide a given minimum gain, specific gain discrimination between the main and back lobes and broadband performance. This algorithm is developed based on the non-dominated sorting genetic algorithm (NSGA-II) and Minimum Spanning Tree (MST) technique for producing diverse solutions when the number of objectives is increased beyond two. The proposed method is validated through the design of a wideband airborne SAR

Genetic algorithm based indicator sequence method for exon prediction

Considerable research effort has been devoted in predicting the exon regions of genes. The binary indicator (BI), Electron ion interaction pseudo potential (EIIP), Filter method are some of the methods. All these methods make use of the period three behavior of the exon region. Even though the method suggested in this paper is similar to above mentioned methods , it introduces a set of sequences for mapping the nucleotides selected by applying genetic algorithm and found to be more promising

A Faster 2D Technique for the design of Combinational Digital Circuits Using Genetic Algorithm

Combinational digital circuits can be evolved automatically using Genetic Algorithms (GA). Until recently this technique used linear chromosomes and and one dimensional crossover and mutation operators. In this paper, a new method for representing combinational digital circuits as 2 Dimensional (2D) chromosomes and suitable 2D crossover and mutation techniques has been proposed. By using this method, the convergence speed of GA can be increased significantly compared to the conventional methods. Moreover, the 2D representation and crossover operation provides the designer with better visualization of the evolved circuits. In addition to this, a technique to display automatically the evolved circuits has been developed with the help of MATLAB

An Improved Design of Combinational Digital Circuits with Multiplexers using Genetic Algorithm

This paper presents a new approach to the design of combinational digital circuits with multiplexers using Evolutionary techniques. Genetic Algorithm (GA) is used as the optimization tool. Several circuits are synthesized with this method and compared with two design techniques such as standard implementation of logic functions using multiplexers and implementation using Shannon’s decomposition technique using GA. With the proposed method complexity of the circuit and the associated delay can be reduced significantly

Flexure-shear Analysis of Concrete Beam Reinforced with GFRP bars

This paper gives the details of flexure-shear analysis of concrete beams reinforced with GFRP rebars. The influence of vertical reinforcement ratio, longitudinal reinforcement ratio and compressive strength of concrete on shear strength of GFRP reinforced concrete beam is studied. The critical value of shear span to depth ratio (a/d) at which the mode of failure changes from flexure to shear is studied. The fail-ure load of the beam is predicted for various values of a/d ratio. The prediction show that the longitudinally FRP reinforced concrete beams having no stirrups fail in shear for a/d ratio less than 9.0. It is expected that the predicted data is useful for structural engineers to design the FRP reinforced concrete members.

Formation of carbon-encapsulated metallic nano-particles from metal acetylides by electron beam irradiation

Transition metal acetylides, MC2 (M=Fe, Co and Ni), exhibit ferromagnetic behavior of which TC is characteristic of their size and structure. CoC2 synthesized in anhydrous condition exhibited cubic structure with disordered C2− 2 orientation. Once being exposed to water (or air), the particles behave ferromagnetically due to the lengthening of the Co–Co distance by the coordination of water molecules to Co2+ cations. Heating of these particles induces segregation of metallic cores with carbon mantles. Electron beam or 193 nm laser beam can produce nanoparticles with metallic cores covered with carbon mantles

Further investigations on doubly excited four-electron ions: beam-foil experiment and MCDF theory

In continuation of our previous work on the quintet transitions 1s2s2p^2 ^5 P-1s2s2p3d ^5 P^0, ^5 D^0, results on other n = 2 - n' = 3 quintet transitions for elements N, 0 and F are presented. Assignments have been established by comparison with Multi-Configuration Dirac-Fock calculations. High spectral resolution on beam-foil spectroscopy was essential for the identification of most of the lines. For some of the quintet lines decay curves were measured, and the lifetimes extracted were found to be in reasonable agreement with MCDF calculations.

Beam-foil-excited auger transitions in neon

Energy spectra of electrons ejected from collisions between a carbon foil and Ne projectiles with energies between 1.4 and 20 MeV have been measured. Continuous and discrete electron energy distributions are observed. Auger transitions of foil-excited Ne have been studied. Using relativistic Dirac-Fock multiconfiguration calculations, most of the measured Auger transitions have been identified.

Generic Finite Element Model for Mechanically Consistent Scaling of Composite Beam-to-column Joint with Welded Connection

To study the behaviour of beam-to-column composite connection more sophisticated finite element models is required, since component model has some severe limitations. In this research a generic finite element model for composite beam-to-column joint with welded connections is developed using current state of the art local modelling. Applying mechanically consistent scaling method, it can provide the constitutive relationship for a plane rectangular macro element with beam-type boundaries. Then, this defined macro element, which preserves local behaviour and allows for the transfer of five independent states between local and global models, can be implemented in high-accuracy frame analysis with the possibility of limit state checks. In order that macro element for scaling method can be used in practical manner, a generic geometry program as a new idea proposed in this study is also developed for this finite element model. With generic programming a set of global geometric variables can be input to generate a specific instance of the connection without much effort. The proposed finite element model generated by this generic programming is validated against testing results from University of Kaiserslautern. Finally, two illustrative examples for applying this macro element approach are presented. In the first example how to obtain the constitutive relationships of macro element is demonstrated. With certain assumptions for typical composite frame the constitutive relationships can be represented by bilinear laws for the macro bending and shear states that are then coupled by a two-dimensional surface law with yield and failure surfaces. In second example a scaling concept that combines sophisticated local models with a frame analysis using a macro element approach is presented as a practical application of this numerical model.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

An O(N) Algorithm for Three-Dimensional N-Body Simulations

We develop an algorithm that computes the gravitational potentials and forces on N point-masses interacting in three-dimensional space. The algorithm, based on analytical techniques developed by Rokhlin and Greengard, runs in order N time. In contrast to other fast N-body methods such as tree codes, which only approximate the interaction potentials and forces, this method is exact ?? computes the potentials and forces to within any prespecified tolerance up to machine precision. We present an implementation of the algorithm for a sequential machine. We numerically verify the algorithm, and compare its speed with that of an O(N2) direct force computation. We also describe a parallel version of the algorithm that runs on the Connection Machine in order 0(logN) time. We compare experimental results with those of the sequential implementation and discuss how to minimize communication overhead on the parallel machine.

On Convergence Properties of the EM Algorithm for Gaussian Mixtures

"Expectation-Maximization'' (EM) algorithm and gradient-based approaches for maximum likelihood learning of finite Gaussian mixtures. We show that the EM step in parameter space is obtained from the gradient via a projection matrix $P$, and we provide an explicit expression for the matrix. We then analyze the convergence of EM in terms of special properties of $P$ and provide new results analyzing the effect that $P$ has on the likelihood surface. Based on these mathematical results, we present a comparative discussion of the advantages and disadvantages of EM and other algorithms for the learning of Gaussian mixture models.

Hierarchical Mixtures of Experts and the EM Algorithm

We present a tree-structured architecture for supervised learning. The statistical model underlying the architecture is a hierarchical mixture model in which both the mixture coefficients and the mixture components are generalized linear models (GLIM's). Learning is treated as a maximum likelihood problem; in particular, we present an Expectation-Maximization (EM) algorithm for adjusting the parameters of the architecture. We also develop an on-line learning algorithm in which the parameters are updated incrementally. Comparative simulation results are presented in the robot dynamics domain.