Investigation of microwave dielectric relaxation solid state process in the antiferroelectric phase of NaNbO3 ceramics

This letter reports microwave dielectric measurements performed in the antiferroelectric phase of NaNbO3 ceramics from 100 to 450 K. Remarkable dielectric relaxation was found within the antiferroelectric phase and in the vicinity of the ferroelectric-antiferroelectric phase transition. Such dielectric relaxation process was associated with relaxations of polar nanoregions with strong relaxor-like characteristic. In addition, the microwave dielectric measurements also revealed an unexpected and unusual anomaly in the relaxation strength, which was related to a disruption of the antiferroelectric order induced by a possible AFE-AFE phase transition. (C) 2004 Elsevier Ltd. All rights reserved.

Morphological and Structural changes of CaxSr1-xTiO3 Powders Obtained by the Microwave-Assisted Hydrothermal Method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence of barium-calcium titanates obtained by the microwave-assisted hydrothermal method (MAH)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and optical properties of CaTiO3 perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: An experimental and theoretical insight

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Conventional and microwave sintering of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites: non-ohmic and dielectric properties

The non-ohmic and dielectric properties as well as the dependence on the microstructural features of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites obtained by conventional and microwave sintering were investigated. It was demonstrated that the non-ohmic and dielectric properties depend strongly on the sintering conditions. It was found that the non-linear coefficient reaches values of 65 for microwave-sintered samples and 42 for samples sintered in a conventional furnace when a current density interval of 1-10 mA cm(-2) is considered. The non-linear coefficient value of 65 is equivalent to 1500 for samples sintered in the microwave if a current interval of 5-30 mA is considered as is shortly discussed by Chung et al (2004 Nature Mater. 3 774). Due to a high non-linear coefficient and a low leakage current (90 mu A) under both processing conditions, these samples are promising for varistor applications. The conventionally sintered samples exhibit a higher relative dielectric constant at 1 kHz (2960) compared with the samples sintered in the microwave furnace (2100). At high frequencies, the dielectric constant is also larger in the samples sintered in the conventional furnace. Depending on the application, one or another synthesis methodology is recommended, that is, for varistor applications sintered in a microwave furnace and for dielectric application sintered in a conventional furnace.

Growth of SrBi4Ti4O15 thin films in a microwave oven by the polymeric precursor method

SrBi4Ti4O15 (SBTi) thin films were obtained by the polymeric precursor method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional furnace at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent\polarization P-r and a coercive field E-c of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kV/cm for the film thermally treated in conventional furnace, respectively. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films can be a promise material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by Xray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P-r and a coercive field E-c values of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kv/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

Thermal treatment of superconductor thin film of the BSCCO system using domestic microwave oven

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Hydrothermal Microwave: A New Route to Obtain Photoluminescent Crystalline BaTiO3 Nanoparticles

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Application of wavelets to the evaluation of phantom images for mammography quality control

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Evaluation of the color stability of two techniques for reproducing artificial irides after microwave polymerization

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Comparison of denture microwave disinfection and conventional antifungal therapy in the treatment of denture stomatitis: a randomized clinical study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Microwave Denture Disinfection Versus Nystatin in Treating Patients with Well-Controlled Type 2 Diabetes and Denture Stomatitis: A Randomized Clinical Trial

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effectiveness of microwave disinfection of complete dentures on the treatment of Candida-related denture stomatitis

The effectiveness of microwave disinfection of maxillary complete dentures on the treatment of Candida-related denture stomatitis was evaluated. Patients (n = 60) were randomly assigned to one of four treatment groups of 15 subjects each; Control group: patients performed the routine denture care; Mw group: patients had their upper denture microwaved (650 W per 6 min) three times per week for 30 days; group MwMz: patients received the treatment of Mw group in conjunction with topical application of miconazole three times per day for 30 days; group Mz: patients received the antifungal therapy of group MwMz. Cytological smears and mycological cultures were taken from the dentures and the palates of all patients before treatment at day 15 and 30 of treatment and at follow-up (days 60 and 90). The effectiveness of the treatments was evaluated by Kruskal-Wallis and Mann-Whitney tests. Microbial and clinical analysis of the control group demonstrated no significant decrease in the candidal infection over the clinical trial. Smears and cultures of palates and dentures of the groups Mw and MwMz exhibited absence of Candida at day 15 and 30 of treatment. on day 60 and 90, few mycelial forms were observed on 11 denture smears (36.6%) from groups Mw and MwMz, but not on the palatal smears. Miconazole (group Mz) neither caused significant reduction of palatal inflammation nor eradicated Candida from the dentures and palates. Microwaving dentures was effective for the treatment of denture stomatitis. The recurrence of Candida on microwaved dentures at follow-up was dramatically reduced.

Denture disinfection by microwave irradiation: A randomized clinical study

Processo FAPESP: 05/02384-4