Optical modulator based on a Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice structure

An optical modulator is designed and fabricated based on a Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetrical superlattice structure. The device comprises a p-i-n diode made on the asymmetrical superlattice integrated with a 920-mu m-long Fabry-Perot (F-P) cavity. Parameters of the rib waveguide are designed to satisfy only the fundamental-TE mode transmission. Here, 65 and 40-pm red shifts of the peak resonant were measured under the applied bias of 2.5 and -32.0 V, respectively. The analysis shows that, besides the thermal-optical and plasma dispersion effects, the Pockels effect also contributes to such a peak shift. The corresponding calculated effective Pockels coefficient is about 0.158 pm/V.

Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress

We report a photoluminescence (PL) energy red-shift of single quantum dots (QDs) by applying an in-plane compressive uniaxial stress along the [110] direction at a liquid nitrogen temperature. Uniaxial stress has an effect not only on the confinement potential in the growth direction which results in the PL shift, but also on the cylindrical symmetry of QDs which can be reflected by the change of the full width at half maximum of PL peak. This implies that uniaxial stress has an important role in tuning PL energy and fine structure splitting of QDs.

1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer

Optical properties and surface structures of InAs/CaAs self-assembled quantum dots (QDs) grown on 2 nm In-0.2 Ga0.8As and x ML GaAs combined strain-buffer layer were investigated systematically by photoluminescence ( PL) and atomic force microscopy (AFM). The QD density increased from similar to 1.7 x 10(9) cm(-2) to similar to 3.8 x 10(9) cm(-1) due to the decreasing of the lattice mismatch. The combined layer was of benefit to increasing In incorporated into dots and the average height-to-width ratios, which resulted in the red-shift of the emission peaks. For the sample of x = 10 ML, the ground state transition is shifted to 1350 nm at room temperature.

Localized exciton dynamics in AlInGaN alloy

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/,tau)13], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent beta on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR

A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

硝化抑制剂在我国棕壤和红壤上的应用效果研究

土壤类型、温度等条件是影响硝化抑制剂效果的重要因素，为了探讨几种国外报道的高效硝化抑制剂在我国棕壤和红壤上的适应情况，以及温度等条件对于施肥土壤中NO3--N的积累和硝化抑制剂效果的影响，进行了本研究。采用室内培养的方式，研究了ATC、DMPP和CMP（每种抑制剂在两种土壤上分别设两个浓度处理）在我国棕壤和红壤上的效果，与目前应用较多的DCD（0.5%、1.0%两个浓度处理）进行效果对比；研究了温度条件、添加C源及培养条件对土壤中NO3--N积累及CMP硝化抑制效果的影响。结果表明，土壤条件是影响NO3--N积累和所用四种硝化抑制剂（DMPP、CMP、ATC、DCD）抑制效果的一个显著因素，棕壤中氮素转化较快，硝化抑制剂表现出效果较早，在红壤中起效时间较晚，在两种土壤条件下，所用抑制剂都表现出了良好的效果，在60天内ATC、CMP和DMPP的效果与10倍用量的DCD效果类似，甚至好于DCD，在棕壤中同种抑制剂的两个浓度处理之间存在显著差异，但是在红壤几个处理之间没有表现出显著差异；温度条件也是影响NO3--N积累的一个显著因素，从计算硝化抑制率看出，在25℃和30℃下CMP表现出了高效，37℃下抑制率下降，效果变差；添加两个浓度的葡萄糖对于对照中NO3--N的积累以及硝化抑制剂的硝化抑制效果没有表现出显著作用；增加的一步预培养恢复了土壤中微生物的活性在短期内体现了出来，但是长期看对于NO3--N积累量、变化趋势以及硝化抑制率都没有表现出显著作用。

Starburst substituted hexaazatriphenylene compounds: synthesis, photophysical and electrochemical properties

Starburst-substituted hexaazatriphenylene Compounds have been designed and synthesized by introducing various peripheral aryl substituents to the central heterocyclic core. The effects of various substituent groups on the photophysical and electrochemical properties of the substituted hexaazatriphenylene have been investigated. Significant red-shifts of the absorption peak (from 413 nm to 530 nm) and emission peak (from 432 nm to 700 nm) were observed when the electron-donating ability of the aryl substituents was increased, corresponding to a decrease in the band gap from 2.90 eV to 2.05 eV. Introducing bulky substituents with weak electron-donating ability enhances the fluorescence quantum yield from 23% to 87%. In contrast, incorporating aryl substituents with strong electron-donating ability decreases the fluorescence quantum yield.

Luminescent and Mesoporous Europium-Doped Bioactive Glasses (MBG) as a Drug Carrier

Luminescent and mesoporous europium-doped bioactive glasses (MBG:Eu) were successfully synthesized by a two-step acid-catalyzed self-assembly process combined with hydrothermal treatment in an inorganic-organic system. The obtained MBG was performed as a drug delivery carrier to investigate the drug storage/release properties using ibuprofen (IBU) as a model drug. The structural, morphological, textural and optical properties were well characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), N-2 adsorption/desorption, and photoluminescence (PL) spectra, respectively. The results reveal that the MBG exhibit the typical ordered characteristics of the hexagonal mesostructure. This composite shows sustained release profile with ibuprofen as the model drug. The IBU-loaded samples still show red luminescence of Eu3+ (D-5(0)-F-7(1, 2)) under UV irradiation, and the emission intensities of Eu3+ in the drug carrier system vary with the released amount of IBU, thus making the drug release be easily tracked and monitored by the change of the luminescence intensity.

A versatile color tuning strategy for iridium(III) and platinum(II) electrophosphors by shifting the charge-transfer states with an electron-deficient core

By fusing an electron-deficient ring system with the phenyl ring of a 2-phenylpyridine (ppy)-type ligand, a new and synthetically versatile strategy for the phosphorescence color tuning of cyclometalated iridium(III) and platinum(II) metallophosphors has been established. Two robust red electrophosphors with enhanced electron-injection/electron-transporting features were prepared by using an electron-trapping fluoren-9-one chromophore in the ligand design. The thermal, photophysical, redox and electrophosphorescent properties of these complexes are reported. These exciting results can be attributed to a switch of the metal-to-ligand charge-transfer (MLCT) character of the transition from the pyridyl groups in the traditional Ir-III or Pt-II ppy-type complexes to the electron-deficient ring core, and the spectral assignments corroborate well with the electrochemical data as well as the timedependent density functional theory (TD-DFT) calculations. The electron-withdrawing character of the fused ring results in much more stable MLCT states, inducing a substantial red-shift of the triplet emission energy from yellow to red for the Ir-III complex and even green to red for the PtII counterpart.

Surface-enhanced Raman scattering studies on aggregated silver nanoplates in aqueous solution

Four different sizes of citrate-protected silver nanoplates with the corresponding in-plane dipole resonance band at 530, 619, 778, and 858 nm, respectively, are synthesized for surface-enhanced Raman scattering (SERS) study. Their aggregation behaviors are monitored by use of UV-vis spectroscopy. During the aggregation process, a marked red shift of the in-plane dipole resonance of silver nanoplates is observed, whereas other resonance modes of them only have small alterations in the site or intensity. Aggregated silver nanoplates can serve as active SERS substrates with an enhancement factor of about 4.5 x 10(5) using 2-aminothiophenol as a probing molecule. The SERS performance of silver nanoplates is even superior to the commonly used Lee-Meisel silver colloid, making them very attractive for SERS applications.

Tunable photoluminescence in sol-gel derived silica xerogels

Silica xerogels prepared by sol-gel method show blue emission under UV excitation with a smaller Stokes shift. The luminescent properties have been investigated under various preparation conditions and compositions. The silica xerogels show similar luminescent properties when using C2H5OH and N,N-dimethylformamide (DMF) as solvents, which are very different from those when using dimethylsulfoxide (DMSO) as solvent, i.e., a red shift of excitation and emission has been observed in the latter case. The emission intensity of the silica xerogels also depends on the water content and pH of the starting reaction solution. The introduction of organic group (-CH3) in the silica xerogel modifies the network structure and further changes their luminescence properties. Heat treatment results in the decomposition of the organic (-SiCH3) groups, which eliminates the old luminescent centers and produces new luminescent centers in longer wavelength simultaneously. (C) 2000 Elsevier Science B.V. All rights reserved.

海洋红藻多管藻和松节藻的化学成分及抗氧化活性研究

海洋生物具有产生丰富多样的次生代谢产物的能力，其中红藻门松节藻科海藻卤代次生代谢产物以其结构新颖、生物活性独特引起了天然产物化学家的重视。 本论文对海洋红藻多管藻和松节藻进行了化学成分研究，综合利用各种色谱学方法 (硅胶柱层析、反相硅胶柱层析、凝胶Sephadex LH-20柱层析、半制备高效液相色谱以及重结晶等) 和现代波谱学技术 (IR、UV、EI-MS、FAB-MS、HR-ESI-MS、CD、1H-NMR、13C-NMR、DEPT、1H-1H COSY、HSQC、HMBC等)，共分离鉴定了100个化合物，发现25个新化合物。 从多管藻中分离鉴定38个化合物 (24个溴酚化合物)，其中7个新化合物 (均为溴酚化合物)，包括1个菲并呋喃结构溴酚 (P1), 2个二氢菲结构溴酚 (P2, P3)，1个含 5,7-dihydrodibenzo[c,e]oxepine 结构溴酚 (P4)和3个简单溴酚 (P5, P6, P7)。P1 (urceolatin) 属首例报道的具有菲并呋喃结构的天然产物，从该种中分离的化合物P12 和 P13 可能是其生源合成的前体。P2和P3为第二例报道的具有二氢菲结构的溴酚化合物。 从松节藻中分离并鉴定了62 个化合物，其中18 个为溴酚类新化合物，44 个为已知化合物。化合物具有多变的取代基团，包括2 个脲基吡咯烷酮溴酚化合物 (R1, R2), 4 个γ-脲基丁酸溴酚化合物 (R3-R6)，5 个酰胺溴酚化合物 (R7, R8, R9, R13, R14)，1 个溴酚砜化合物 (R12), 1 个Xanthene 溴酚化合物 (R10)和5 个简单溴酚化合物 (R11, R15, R16, R17, R18)。R1、R2 是首例报道的含有脲基吡咯烷酮片段的天然产物，R10 为首次报道的溴代Xanthene 类天然产物。 对分离到的化合物进行了清除DPPH 和ABTS两种自由基活性的筛选。结果发现溴酚类天然产物具有显著的DPPH自由基清除活性，其中R3 的IC50 仅为3.3 μM, 其活性强度约为阳性对照BHT (IC50 为82.1 μM) 的24倍。另外，溴酚类天然产物对ABTS自由基有较强的清除活性，R2 的TEAC（Trolox efficency activity capacity）值为5.2 mM，约为阳性对照 (ascorbic acid, 1.02 mM) 的 5 倍。初步的构效关系研究发现，稠环分子、多羟基和邻位甲氧基等结构特点能有效增强DPPH 自由基清除活性；特殊取代基如脲基、吡咯烷酮等含有氮原子的基团，能有效增强ABTS 自由基清除活性，多羟基、溴代等结构特点也使其活性有所增强。 本研究结果丰富了海藻卤代化合物的结构类型，为多管藻和松节藻的合理利用提供了一定的科学依据。