EBG size reduction for low permittivity substrates

Double layer and edge-location via techniques are combined for electromagnetic band gap (EBG) size reduction. The study of the required number of elements and their dimensions is carried out in order to suppress the surface wave propagation modes and consequently to reduce the mutual coupling between radiating elements in low-permittivity substrates. By applying these techniques, the size of the EBG mushroom is reduced by 30%; however, the bandwidth operation maintains its value, and these structures can be integrated between radiating elements in broad bandwidth antennas.

Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application

The optoelectronic properties of Cu2ZnSnS4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host.

Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.

New EBG solutions for mutual coupling reduction

Electromagnetic Band Gap (EBG) based on Frequency Selective Surfaces (FSS) [1] are one type of metamaterials [2] with electrical properties [3]. This EBG are used in mutual coupling reduction, back lobe radiation reduction, etc. In this work not only new shapes for the mushroom-type are presented, but also multilayered configurations were studied in order to reduce the patch size and the necessary number of elements.

Revision of EBG metamaterials and active antennas

This review of Electromagnetic Band Gap (EGB) metamaterials and steering integrated antennas was carried out in IMST GmbH under a short collaboration stay. This activity is in line with Coordinating the Antenna Research in Europe (CARE). The aim is to identify the newest trends, and suggest novel solutions and design methodologies for various applications.

Contribución a los arrays de antenas activos en microondas = Contribution to active array antennas at microwave bands

Esta tesis que tiene por título "Contribución a los arrays de antenas activos en banda X", ha sido desarrollada por el estudiante de doctorado Gonzalo Expósito Domínguez, ingeniero de telecomunicación en el Grupo de Radiación del Departamento de Señales, Sistemas y Radiocomunicaciones de la ETSI de Telecomunicación de la Universidad Politécnica de Madrid bajo la dirección de los doctores Manuel Sierra Castañer y José Manuel Fernández González. Esta tesis contiene un profundo estudio del arte en materia de antenas activas en el campo de apuntamiento electrónico. Este estudio comprende desde los fundamentos de este tipo de antenas, problemas de operación y limitaciones hasta los sistemas actuales más avanzados. En ella se identifican las partes críticas en el diseño y posteriormente se llevan a la práctica con el diseño, simulación y construcción de un subarray de una antena integrada en el fuselaje de un avión para comunicaciones multimedia por satélite que funciona en banda X. El prototipo consta de una red de distribución multihaz de banda ancha y una antena planar. El objetivo de esta tesis es el de aplicar nuevas técnicas al diseño de antenas de apuntamiento electrónico. Es por eso que las contribuciones originales son la aplicación de barreras electromagnéticas entre elementos radiantes para reducir los acoplamientos mutuos en arrays de exploración electrónica y el diseño de redes desfasadoras sencillas en las que no son necesarios complejos desfasadores para antenas multihaz. Hasta la fecha, las barreras electromagnéticas, Electronic Band Gap (EBG), se construyen en sustratos de permitividad alta con el fin de aumentar el espacio disponible entre elementos radiantes y reducir el tamaño de estas estructuras. Sin embargo, la utilización de sustratos de alta permitividad aumenta la propagación por ondas de superficie y con ellas el acoplo mutuo. Utilizando sustratos multicapa y colocando la vía de las estructuras en su borde, en vez de en su centro, se consigue reducir el tamaño sin necesidad de usar sustratos de alta permitividad, reducir la eficiencia de radiación de la antena o aumentar la propagación por ondas de superficie. La última parte de la tesis se dedica a las redes conmutadoras y desfasadoras para antenas multihaz. El diseño de las redes de distribución para antenas son una parte crítica ya que se comportan como un atenuador a la entrada de la cadena receptora, modificando en gran medida la figura de ruido del sistema. Las pérdidas de un desfasador digital varían con el desfase introducido, por ese motivo es necesario caracterizar y calibrar los dispositivos correctamente. Los trabajos presentados en este manuscrito constan de un desfasador reflectivo con un conmutador doble serie paralelo para igualar las pérdidas de inserción en los dos estados y también un conmutador de una entrada y dos salidas cuyos puertos están adaptados en todo momento independientemente del camino del conmutador para evitar las reflexiones y fugas entre redes o elementos radiantes. El tomo finaliza con un resumen de las publicaciones en revistas científicas y ponencias en congresos, nacionales e internacionales, el marco de trabajo en el que se ha desarrollado, las colaboraciones que se han realizado y las líneas de investigación futuras. ABSTRACT This thesis was carried out in the Radiation Group of the Signals, Systems and Radiocomunications department of ETSI de Telecomunicación from Technical University of Madrid. Its title is "Contribution to active array antennas at X band" and it is developed by Gonzalo Expósito Domínguez, Electrical Engineer MsC. under the supervision of Prof. Dr. Manuel Sierra Castañer and Dr. José Manuel Fernández González. This thesis is focused on active antennas, specifically multibeam and electronic steering antenas. In the first part of the thesis a thorough description of the state of the art is presented. This study compiles the fundamentals of this antennas, operation problems and limits, up to the breakthrough applications. The critical design problems are described to use them eventually in the design, simulation and prototyping of an airborne steering array antenna for satellite communication at X band. The main objective of this thesis is to apply new techniques to the design of electronically steering antennas. Therefore the new original contributions are the application of Electromagnetic Band Gap materials (EBG) between radiating elements to reduce the mutual coupling when phase shift between elements exist and phase shifting networks where special characteristics are required. So far, the EBG structures have been constructed with high permitivity substrates in order to increase the available space between radiating elements and reduce the size of the structures. However, the surface wave propagation modes are enhanced and therefore the mutual coupling increases when high permitivity substrates are used. By using multilayered substrates and edge location via, the size is reduced meanwhile low permitivity substrates are used without reducing the radiation efficiency or enhancing the surface propagation modes. The last part of the thesis is focused on the phase shifting distribution networks for multibeam antennas. This is a critical part in the antenna design because the insertion loss in the distribution network behaves as an attenuator located in the first place in a receiver chain. The insertion loss will affect directly to the receiver noise figure and the insertion loss in a phase shifter vary with the phase shift. Therefore the devices must be well characterized and calibrated in order to obtain a properly operation. The work developed in this thesis are a reflective phase shifter with a series-shunt switch in order to make symmetrical the insertion loss for the two states and a complex Single Pole Double Through (SPDT) with matched ports in order to reduce the reflections and leakage between feeding networks and radiating elements. The end of this Ph D. dissertation concludes with a summary of the publications in national and international conferences and scientific journals, the collaborations carried out along the thesis and the future research lines.

Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure

We present a theoretical study of the structural and electronic properties of the M-doped MgIn2S4 ternary spinel semiconductor with M = V, Cr, and Mn. All substitutions, in the normal and in the inverse structure, are analyzed. Some of these possible substitutions present intermediate-band states in the band gap with a different occupation for a spin component. It increases the possibilities of inter-band transitions and could be interesting for applications in optoelectronic devices. The contribution to, and the electronic configuration of, these intermediate bands for the octahedral and tetrahedral sites is analyzed and discussed. The study of the substitutional energies indicates that these substitutions are favorable. Comparison between the pure and doped hosts absorption coefficients shows that this deeper band opens up more photon absorption channels and could therefore increase the solar-light absorption with respect to the host.

Dual Active Bridge based Battery Charger for Plug-in Hybrid Electric Vehicle with Charging Current Containing Low Frequency Ripple

High power density is strongly preferable for the on-board battery charger of Plug-in Hybrid Electric Vehicle (PHEV). Wide band gap devices, such as Gallium Nitride HEMTs are being explored to push to higher switching frequency and reduce passive component size. In this case, the bulk DC link capacitor of AC-DC Power Factor Correction (PFC) stage, which is usually necessary to store ripple power of two times the line frequency in a DC current charging system, becomes a major barrier on power density. If low frequency ripple is allowed in the battery, the DC link capacitance can be significantly reduced. This paper focuses on the operation of a battery charging system, which is comprised of one Full Bridge (FB) AC-DC stage and one Dual Active Bridge (DAB) DC-DC stage, with charging current containing low frequency ripple at two times line frequency, designated as sinusoidal charging. DAB operation under sinusoidal charging is investigated. Two types of control schemes are proposed and implemented in an experimental prototype. It is proved that closed loop current control is the better. Full system test including both FB AC-DC stage and DAB DC-DC stage verified the concept of sinusoidal charging, which may lead to potentially very high power density battery charger for PHEV.

Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included.

Photovoltaic application of the V, Cr and Mn-doped cadmium thioindate

The CdIn2S4 spinel semiconductor is a potential photovoltaic material due to its energy band gap and absorption properties. These optoelectronic properties can be potentiality improved by the insertion of intermediate states into the energy bandgap. We explore this possibility using M = Cr, V and Mn as an impurity. We analyze with first-principles almost all substitutions of the host atoms by M at the octahedral and tetrahedral sites in the normal and inverse spinel structures. In almost all cases, the impurities introduce deeper bands into the host energy bandgap. Depending on the site substitution, these bands are full, empty or partially-full. It increases the number of possible inter-band transitions and the possible applications in optoelectronic devices. The contribution of the impurity states to these bands and the substitutional energies indicate that these impurities are energetically favorable for some sites in the host spinel. The absorption coefficients in the independent-particle approximation show that these deeper bands open additional photon absorption channels. It could therefore increase the solar-light absorption with respect to the host.

Analysis of SnS2 hyperdoped with V proposed as efficient absorber material

Intermediate-band materials can improve the photovoltaic efficiency of solar cells through the absorption of two subband-gap photons that allow extra electron-hole pair formations. Previous theoretical and experimental findings support the proposal that the layered SnS2 compound, with a band-gap of around 2 eV, is a candidate for an intermediate-band material when it is doped with a specific transition-metal. In this work we characterize vanadium doped SnS2 using density functional theory at the dilution level experimentally found and including a dispersion correction combined with the site-occupancy-disorder method. In order to analyze the electronic characteristics that depend on geometry, two SnS2 polytypes partially substituted with vanadium in symmetry-adapted non-equivalent configurations were studied. In addition the magnetic configurations of vanadium in a SnS2 2H-polytype and its comparison with a 4H-polytype were also characterized. We demonstrate that a narrow intermediate-band is formed, when these dopant atoms are located in different layers. Our theoretical predictions confirm the recent experimental findings in which a paramagnetic intermediate-band material in a SnS2 2H-polytype with 10% vanadium concentration is obtained.

Binary metal oxides for composite ultrafiltration membranes

A new ultrafiltration membrane was developed by the incorporation of binary metal oxides inside polyethersulfone. Physico-chemical characterization of the binary metal oxides demonstrated that the presence of Ti in the TiO2?ZrO2 system results in an increase of the size of the oxides, and also their dispersity. The crystalline phases of the synthesized binary metal oxides were identified as srilankite and zirconium titanium oxide. The effect of the addition of ZrO2 can be expressed in terms of the inhibition of crystal growth of anocrystalline TiO2 during the synthesis process. For photocatalytic applications the band gap of the synthesized semiconductors was determined, confirming a gradual increase (blue shift) in the band gap as the amount of Zr loading increases. Distinct distributions of binary metal oxides were found along the permeation axis for the synthesized membranes. Particles with Ti are more uniformly dispersed throughout the membrane cross-section. The physico-chemical characterization of membranes showed a strong correlation between some key membrane properties and the spatial particle distribution in the membrane structure. The proximity of metal oxide fillers to the membrane surface determines the hydrophilicity and porosity of modified membranes. Membranes incorporating binary metal oxides were found to be promising candidates for wastewater treatment by ultrafiltration, considering the observed improvement influx and anti-fouling properties of doped membranes. Multi-run fouling tests of doped membranes confirmed the stability of permeation through membranes embedded with binary TiO2?ZrO2 particles.

Desenvolvimento e caracterização do filtro óptico de interferência variável para detectores de alta resolução espectral e biossensores.

O presente trabalho está fundamentado no desenvolvimento de uma metodologia e/ou uma tecnologia de obtenção e caracterização de filtros ópticos de interferência de banda passante variável [C.M. da Silva, 2010] e de banda de corte variáveis, constituídos por refletores dielétricos multicamadas de filmes finos intercalados por cavidades de Fabry-Perot não planares com espessuras linearmente variáveis, que apresentam a propriedade do deslocamento linear da transmitância máxima espectral em função da posição, isto é, um Filtro de Interferência Variável (FIV). Este método apresenta novas e abrangentes possibilidades de confecção de filtros ópticos de interferência variável: lineares ou em outras formas desejadas, de comprimento de onda de corte variável (passa baixa ou alta) e filtros de densidade neutra variável, através da deposição de metais, além de aplicações em uma promissora e nova área de pesquisa na deposição de filmes finos não uniformes. A etapa inicial deste desenvolvimento foi o estudo da teoria dos filtros ópticos dielétricos de interferência para projetar e construir um filtro óptico banda passante convencional de um comprimento de onda central com camadas homogêneas. A etapa seguinte, com base na teoria óptica dos filmes finos já estabelecida, foi desenvolver a extensão destes conhecimentos para determinar que a variação da espessura em um perfil inclinado e linear da cavidade entre os refletores de Bragg é o principal parâmetro para produzir o deslocamento espacial da transmitância espectral, possibilitando o uso de técnicas especiais para se obter uma variação em faixas de bandas de grande amplitude, em um único filtro. Um trabalho de modelagem analítica e análise de tolerância de espessuras dos filmes depositados foram necessários para a seleção da estratégia do \"mascaramento\" seletivo do material evaporado formado na câmara e-Beam (elétron-Beam) com o objetivo da obtenção do filtro espectral linear variável de características desejadas. Para tanto, de acordo com os requisitos de projeto, foram necessárias adaptações em uma evaporadora por e-Beam para receber um obliterador mecânico especialmente projetado para compatibilizar os parâmetros das técnicas convencionais de deposição com o objetivo de se obter um perfil inclinado, perfil este previsto em processos de simulação para ajustar e calibrar a geometria do obliterador e se obter um filme depositado na espessura, conformação e disposição pretendidos. Ao final destas etapas de modelagem analítica, simulação e refinamento recorrente, foram determinados os parâmetros de projeto para obtenção de um determinado FIV (Filtro de Interferência Variável) especificado. Baseadas nos FIVs muitas aplicações são emergentes: dispositivos multi, hiper e ultra espectral para sensoriamento remoto e análise ambiental, sistemas Lab-on-Chip, biossensores, detectores chip-sized, espectrofotometria de fluorescência on-chip, detectores de deslocamento de comprimento de onda, sistemas de interrogação, sistemas de imageamento espectral, microespectrofotômetros e etc. No escopo deste trabalho se pretende abranger um estudo de uma referência básica do emprego do (FIV) filtro de interferência variável como detector de varredura de comprimento de ondas em sensores biológicos e químicos compatível com pós processamento CMOS. Um sistema básico que é constituído por um FIV montado sobre uma matriz de sensores ópticos conectada a um módulo eletrônico dedicado a medir a intensidade da radiação incidente e as bandas de absorção das moléculas presentes em uma câmara de detecção de um sistema próprio de canais de microfluidos, configurando-se em um sistema de aquisição e armazenamento de dados (DAS), é proposto para demonstrar as possibilidades do FIV e para servir de base para estudos exploratórios das suas diversas potencialidades que, entre tantas, algumas são mencionadas ao longo deste trabalho. O protótipo obtido é capaz de analisar fluidos químicos ou biológicos e pode ser confrontado com os resultados obtidos por equipamentos homologados de uso corrente.

Electronic properties of the MoS2-WS2 heterojunction

We study the electronic structure of a heterojunction made of two monolayers of MoS2 and WS2. Our first-principles density functional calculations show that, unlike in the homogeneous bilayers, the heterojunction has an optically active band gap, smaller than the ones of MoS2 and WS2 single layers. We find that the optically active states of the maximum valence and minimum conduction bands are localized on opposite monolayers, and thus the lowest energy electron-holes pairs are spatially separated. Our findings portray the MoS2-WS2 bilayer as a prototypical example for band-gap engineering of atomically thin two-dimensional semiconducting heterostructures.

Synthesis of high surface area TiO2 nanoparticles by mild acid treatment with HCl or HI for photocatalytic propene oxidation

Nanostructured TiO2 photocatalysts with small crystalline sizes have been synthesized by sol-gel using the amphiphilic triblock copolymer Pluronic P123 as template. A new synthesis route, based on the treatment of TiO2 xerogels with acid-ethanol mixtures in two different steps, synthesis and extraction-crystallization, has been investigated, analyzing two acids, hydrochloric and hydriodic acid. As reference, samples have also been prepared by extraction-crystallization in ethanol, being these TiO2 materials amorphous and presenting higher porosities. The prepared materials present different degrees of crystallinity depending on the experimental conditions used. In general, these materials exhibit high surface areas, with an important contribution of microporosity and mesoporosity, and with very small size anatase crystals, ranging from 5 to 7 nm. The activity of the obtained photocatalysts has been assessed in the oxidation of propene in gas phase at low concentration (100 ppmv) under a UVA lamp with 365 nm wavelength. In the conditions studied, these photocatalysts show different activities in the oxidation of propene which do not depend on their surface areas, but on their crystallinity and band gap energies, being sample prepared with HCl both during synthesis and in extraction-crystallizations steps, the most active one, with superior performance than Evonik P25.