Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application
| Data(s) |
31/05/2012
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|---|---|
| Resumo |
The optoelectronic properties of Cu2ZnSnS4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/16117/1/INVE_MEM_2012_132276.pdf http://www.sciencedirect.com/science/article/pii/S0040609012002799 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2012.03.020 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Thin Solid Films, ISSN 0040-6090, 2012-05-31, Vol. 520, No. 15 |
| Palavras-Chave | #Electrónica #Química |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
