999 resultados para Raman modes
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
Comprend : Séjour de Paris, c'est-à-dire instructions fidèles pour les voiageurs de condition, comment ils se doivent conduire, s'ils veulent faire un bon usage de leur tems et argent durant leur séjour à Paris / par le Sr J. C. Nemeitz
Resumo:
This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn(S,Se)2 absorbers produced by electrodeposition of nanocrystalline CuInSe2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.
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The microstructure of CuInS2-(CIS2) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy (AES), transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios (from Cu-rich to Cu-poor films). Films were grown at different temperatures between 370 and 520-°C. The combination of micro-Raman and AES techniques onto Ar+-sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn5S8 (at the central region of the layer) and MoS2 (at the CIS2/Mo interface). For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS2 at the CIS2/Mo interface. The lower intensity of the MoS2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS2 interface formation. Decreasing the temperature of deposition to 420-°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A1 Raman mode from CIS2, as well as by an increase in the contribution of an additional mode at about 305 cm-1. The experimental data suggest that these effects are related to a decrease in structural quality of the CIS2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes.
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We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.
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Stress in local isolation structures is studied by micro‐Raman spectroscopy. The results are correlated with predictions of an analytical model for the stress distribution and with cross‐sectional transmission electron microscopy observations. The measurements are performed on structures on which the Si3N4 oxidation mask is still present. The influence of the pitch of the periodic local isolation pattern, consisting of parallel lines, the thickness of the mask, and the length of the bird"s beak on the stress distribution are studied. It is found that compressive stress is present in the Si substrate under the center of the oxidation mask lines, with a magnitude dependent on the width of the lines. Large tensile stress is concentrated under the bird"s beak and is found to increase with decreasing length of the bird"s beak and with increasing thickness of the Si3N4 film.
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An analysis of silicon on insulator structures obtained by single and multiple implants by means of Raman scattering and photoluminescence spectroscopy is reported. The Raman spectra obtained with different excitation powers and wavelengths indicate the presence of a tensile strain in the top silicon layer of the structures. The comparison between the spectra measured in both kinds of samples points out the existence in the multiple implant material of a lower strain for a penetration depth about 300 nm and a higher strain for higher penetration depths. These results have been correlated with transmission electron microscopy observations, which have allowed to associate the higher strain to the presence of SiO2 precipitates in the top silicon layer, close to the buried oxide. The found lower strain is in agreement with the better quality expected for this material, which is corroborated by the photoluminescence data.
