993 resultados para Optical physics
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Phosphoniobate glasses with composition (mol%) (100-x) NaPO(3)-xNb(2)O(5) ( x varying from 11 to 33) were prepared and characterized by means of thermal analysis, Fourier transform infrared spectroscopy, Raman scattering and (31)P nuclear magnetic resonance. The addition of Nb(2)O(5) to the polyphosphate base glass leads to depolymerization of the metaphosphate structure. Different colors were observed and assigned as indicating the presence of Nb(4+) ions, as confirmed by electron paramagnetic resonance measurements. The color was observed to depend on the glass composition and melting temperature as well. Er(3+) containing samples were also prepared. Strong emission in the 1550 nm region was observed. The Er(3+4)I(15/2) emission quantum efficiency was observed to be 90% and the quenching concentration was observed to be 1.1 mol%( 1.45 x 10(20) ions cm(-3)). Planar waveguides were prepared by Na(+)-K(+)-Ag(+) ion exchange with Er(3+) containing samples. Optical parameters of the waveguides were measured at 632.8, 543.5 and 1550 nm by the prism coupling technique as a function of the ion exchange time and Ag(+) concentration. The optimized planar waveguides show a diffusion depth of 5.9 mu m and one propagating mode at 1550 nm.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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This work reports on the optical properties of Cr3+ ions in the pseudoternary system InF3-GdF3-GaF3. Linear properties, investigated through absorption and emission spectra, provide information on the crystal field, the frequency, and number of phonons emitted during the absorption to the 4T2 band and the emission to the 4A2 ground state, and the Fano antiresonance line shape in the vicinity of the 4A2→2E transition. A study of the nonlinear refractive index as a function of the wavelength, carried out with the Z-scan technique, provides spectroscopic data about electronic transitions starting from the excited state.
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Optical absorption, Stokes, and anti-Stokes photoluminescence were performed on Er3+-Yb3+ co-doped fluoroindate glasses. For compounds prepared with a fixed 2 mol % ErF3 concentration and YbF3 contents ranging from 0 to 8 mol %, important upconversion processes were observed as a function of temperature and photon excitation energy. Based on the experimental data, two mechanisms for the upconversion (or anti-Stokes photoluminescence) processes were identified and analyzed in detail. At high Yb contents, the upconversion mechanisms are mostly determined by the population of the 2F5/2 levels of Yb3+ ions (or 4I11/2 levels of Er3+ ions, by energy transfer) regardless of the photon excitation energy and temperature of measurement. Moreover, green and red light emission have similar intensities when a large Yb3+ content is present. © 1998 American Institute of Physics.
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In this work we analyze the relation between the interface microroughness and the full width at half maximum (FWHM) of the photoluminescence (PL) spectra for a GaAs/Ga0.7Al0.3As multiple quantum well (QW) system. We show that, in spite of the complex correlation between the microscopic interface-defects parameters and the QW optical properties, the Singh and Bajaj model [Appl. Phys. Lett. 44, 805 (1984)] provides a good quantitative description of the excitonic PL-FWHM. ©1999 The American Physical Society.
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The optical limiting behavior and nonlinear optical properties of antimony and lead oxyhalide glasses were discussed. The large nonlinear absorption coefficients which range from 11 to 20 cm/GW was determined using standard Z-scan technique. The photodarkening in the samples were observed which suggested that they can also be useful for inscribing Bragg gratings using green lasers of moderate power.
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Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.
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Photoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.
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We have established a link between the global ac response and the local flux distribution of superconducting films by combining magnetic ac susceptibility, dc magnetization, and magneto-optical measurements. The investigated samples are three Nb films: a plain specimen, used as a reference sample, and other two films patterned with square arrays of antidots. At low temperatures and small ac amplitudes of the excitation field, the Meissner screening prevents penetration of flux into the sample. Above a certain ac drive threshold, flux avalanches are triggered during the first cycle of the ac excitation. The subsequent periodic removal, inversion, and rise of flux occurs essentially through the already-created dendrites, giving rise to an ac susceptibility signal weakly dependent on the applied field. The intradendrite flux oscillation is followed, at higher values of the excitation field, by a more drastic process consisting of creation of new dendrites and antidendrites. In this more invasive regime, the ac susceptibility shows a clear field dependence. At higher temperatures a smooth penetration occurs, and the flux profile is characteristic of a critical state. We have also shown that the regime dominated by vortex avalanches can be reliably identified by ac susceptibility measurements. © 2011 American Physical Society.
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The nonlinear (NL) optical properties of glassy xBi2O 3-(1-x) GeO2 with x = 0.72 and 0.82 were investigated. The experiments were performed with lasers at 800 nm (pulses of 150 fs) and 532 nm (pulses of 80 ps and 250 ns). Using the Kerr gate technique, we observed that the NL response of the samples at 800 nm is faster than 150 fs. NL refraction indices, | n 2 | ≈ 5 × 10-16 cm2/W, and two-photon absorption coefficients, α 2, smaller than 0.03 cm/GW, were measured at 800 nm. At 532 nm, we measured the NL transmittance of the samples. From the results obtained, we determined α 2 ≈1 cm/GW and excited-state absorption cross-sections of ≈10-22 cm2 due to free-carriers. © 2013 AIP Publishing LLC.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)