Optimal association of mobile wireless devices with a WLAN-3G access network

In this paper, we consider the problem of association of wireless stations (STAs) with an access network served by a wireless local area network (WLAN) and a 3G cellular network. There is a set of WLAN Access Points (APs) and a set of 3G Base Stations (BSs) and a number of STAs each of which needs to be associated with one of the APs or one of the BSs. We concentrate on downlink bulk elastic transfers. Each association provides each ST with a certain transfer rate. We evaluate an association on the basis of the sum log utility of the transfer rates and seek the utility maximizing association. We also obtain the optimal time scheduling of service from a 3G BS to the associated STAs. We propose a fast iterative heuristic algorithm to compute an association. Numerical results show that our algorithm converges in a few steps yielding an association that is within 1% (in objective value) of the optimal (obtained through exhaustive search); in most cases the algorithm yields an optimal solution.

Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes

We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.

Editorial optical computing circuits, devices and systems

Information forms the basis of modern technology. To meet the ever-increasing demand for information, means have to be devised for a more efficient and better-equipped technology to intelligibly process data. Advances in photonics have made their impact on each of the four key applications in information processing, i.e., acquisition, transmission, storage and processing of information. The inherent advantages of ultrahigh bandwidth, high speed and low-loss transmission has already established fiber-optics as the backbone of communication technology. However, the optics to electronics inter-conversion at the transmitter and receiver ends severely limits both the speed and bit rate of lightwave communication systems. As the trend towards still faster and higher capacity systems continues, it has become increasingly necessary to perform more and more signal-processing operations in the optical domain itself, i.e., with all-optical components and devices that possess a high bandwidth and can perform parallel processing functions to eliminate the electronic bottleneck.

New approach to distance relays with quadrilateral polar characteristic for e.h.v.-line protection

A new technique is presented using principles of multisignal relaying for the synthesis of a universal-type quadrilateral polar characteristic. The modus operandi consists in the determination of the phase sequence of a set of voltage phasors and the provision of a trip signal for one sequence while blocking for the other. Two versions, one using ferrite-core logic and another using transistor logic, are described in detail. The former version has the merit of simplicity and has the added advantage of not requiring any d.c. supply. The unit is flexible, as it permits independent control of the characteristic along the resistance and reactance axis through suitable adjustments of replica impedance angles. The maximum operating time is about 20ms for all switching angles, and with faults within 95% of the protected section. The maximum transient overreach is about 8%.

Gate Drive Card for High Power Three Phase PWM Converters

Gate driver is an integral part of every power converter, drives the power semiconductor devices and also provides protection for the switches against short-circuit events and over-voltages during shut down. Gate drive card for IGBTs and MOSFETs with basic features can be designed easily by making use of discrete electronic components. Gate driver ICs provides attractive features in a single package, which improves reliability and reduces effort of design engineers. Either case needs one or more isolated power supplies to drive each power semiconductor devices and provide isolation to the control circuitry from the power circuit. The primary emphasis is then to provide simplified and compact isolated power supplies to the gate drive card with the requisite isolation strength and which consumes less space, and for providing thermal protection to the power semiconductor modules for 3-� 3 wire or 4 wire inverters.

Simulation-driven design of helmets for head impact protection using an injury-based criterion

The current paper suggests a new procedure for designing helmets for head impact protection for users such as motorcycle riders. According to the approach followed here, a helmet is mounted on a featureless Hybrid 3 headform that is used in assessing vehicles for compliance to the FMVSS 201 regulation in the USA for upper interior head impact safety. The requirement adopted in the latter standard, i.e. not exceeding a threshold HIC(d) limit of 1000, is applied in the present study as a likely criterion for adjudging the efficacy of helmets. An impact velocity of 6 m/s (13.5 mph) for the helmet-headform system striking a rigid target can probably be acceptable for ascertaining a helmet's effectiveness as a countermeasure for minimizing the risk of severe head injury. The proposed procedure is demonstrated with the help of a validated LS-DYNA model of a featureless Hybrid 3 headform in conjunction with a helmet model comprising an outer polypropylene shell to the inner surface of which is bonded a protective polyurethane foam padding of a given thickness. Based on simulation results of impact on a rigid surface, it appears that a minimum foam padding thickness of 40 mm is necessary for obtaining an acceptable value of HIC(d).

Polymer blend based photovoltaic devices.

Solar cells on thin conformable substrates require conventional plastics such asPS and PMMA that provide better mechanical and environmental stability with cost reduction. We can also tune charge transfer between PPV derivatives and fullerene derivatives via morphology control of the plastics in the solar cells. Our group has conducted morphology evolution studies in nano- and microscale light emitting domains in poly (2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylenevinylene) (MEH-PPV) and poly (methyl methacrylate) (PMMA) blends. Our current research has been focused on tricomponent-photoactive solar cells which comprise MEH-PPV, PMMA, and [6,6]-phenyl C61-butyric acid methyl ester (PCBM, Figure 1) in the photoactive layer. Morphology control of the photoactive materials and fine tuning of photovoltaic properties for the solar cells are our primary interest. Similar work has been done by the Sariciftci research group. Additionally, a study on inter- and intramolecular photoinduced charge transfer using MEH-PPV derivatives that have different conjugation lengths (Figure 1, n=1 and 0.85) has been performed.

Reactive power optimization with different objectives in large power systems including HVDC systems and FACTS devices

Present day power systems are growing in size and complexity of operation with inter connections to neighboring systems, introduction of large generating units, EHV 400/765 kV AC transmission systems, HVDC systems and more sophisticated control devices such as FACTS. For planning and operational studies, it requires suitable modeling of all components in the power system, as the number of HVDC systems and FACTS devices of different type are incorporated in the system. This paper presents reactive power optimization with three objectives to minimize the sum of the squares of the voltage deviations (ve) of the load buses, minimization of sum of squares of voltage stability L-indices of load buses (¿L2), and also the system real power loss (Ploss) minimization. The proposed methods have been tested on typical sample system. Results for Indian 96-bus equivalent system including HVDC terminal and UPFC under normal and contingency conditions are presented.

Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

We have investigated electrical transport properties of long (>10 mu m) multiwalled carbon nanotubes (NTs) by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs) with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. http://dx.doi.org/10.1063/1.4720426]

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Analysing modifica-tions in the synthesis of multiple state mechanical devices using configuration space and topology graphs

Automated synthesis of mechanical designs is an important step towards the development of an intelligent CAD system. Research into methods for supporting conceptual design using automated synthesis has attracted much attention in the past decades. In our research, ten experimental studies are conducted to find out how designers synthesize solution concepts for multi-state mechanical devices. The designers are asked to think aloud, while carrying out the synthesis. These design synthesis processes are video recorded. It has been found that modification of kinematic pairs and mechanisms is the major activity carried out by all the designers. This paper presents an analysis of these synthesis processes using configuration space and topology graph to identify and classify the types of modifications that take place. Understanding of these modification processes and the context in which they happened is crucial to develop a system for supporting design synthesis of multiple state mechanical devices that is capable of creating a comprehensive variety of solution alternatives.