Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures

Different submicron ferromagnets are fabricated into GaAs and GaAs/AlGaAs superlattice through ion implantation at two different temperatures followed by thermal annealing. The structural and magnetic properties of the granular film are studied by an atomic force microscope, X-ray diffraction and alternating gradient magnetometer. By analyzing the saturation magnetization M-s, remanence M-r, coercivity H-c and remanence ratio S-q, it is confirmed that both MnGa and MnAs clusters are formed in the 350degreesC-implanted samples whereas only MnAs clusters are formed in the room-temperature implanted samples. (C) 2004 Elsevier B.V. All rights reserved.

Mean-field study of Fe2+- and Co2+-doped diluted magnetic semiconductors

Based on a modified mean-field model, we calculate the Curie temperatures of Fe2+- and Co2+-doped diluted magnetic semiconductors (DMSs) and their dependence on the hole concentration. We find that the Curie temperatures increase with an increase in hole concentration and the relationship T(C)proportional to p(1/3) also approximately holds for Fe2+- and Co2+-doped systems with moderate hole concentration. For either low or high hole concentrations, however, the p(1/3) law is violated due to the anomalous magnetization of the Fe2+ and Co2+ ions, and the nonparabolic nature of the hole bands. Further, the values of T-C for Fe2+- and Co2+-doped DMSs are significantly higher than those for Mn2+-doped DMSs, due to the larger exchange interaction strength.

A nanowire magnetic memory cell based on a periodic magnetic superlattice

We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits.

Influence of exotic Mn on magnetic properties of YCo5.0-xMnxGa7.0 (0.05 <= x <= 3.0)

The YCo5.0-xMnxGa7.0 compounds crystallize with the ScFe6Ga6-type structure. The lattice of YCo5.0-xMnxGa7.0 expands with the increase of the Mn content for 0.05 <= x <= 2.5, but the lattice of YCo2.0Mn3.0Ga7.0 shrinks compared with YCo2.5Mn2.5Ga7.0. The shrinkage of the lattice is attributed to the magnetostriction of YCo2.0Mn3.0Ga7.0. The substitution of Mn for Co forms magnetic clusters in the antiferromagnetic matrix. The magnetic frustration results in the spin-glass-like behavior for 0.8 <= x <= 1.5 and the difference between zero-field-cooling (ZFC) and field-cooling (FC) magnetizations for x = 2.0, 2.5, and 3.0. A stable long-range magnetic ordering appears among the Mn-centered magnetic clusters with the ordering temperature 110 K for x = 2.0. The hump in the thermomagnetization of YCo3.0Mn2.0Ga7.0 can be attributed to the competitive effects between the thermal fluctuation and the enhanced magnetic interaction. Both the hump and the bifurcation between the ZFC and the FC magnetizations of YCo3.0Mn2.0Ga7.0 occur at lower temperatures as the applied field increases. On the two-step magnetization curve of YCo3.0Mn2.0Ga7.0, the inflection point at 4000 Oe is due to the coercive field, and the magnetic moments in the clusters are tilted to the applied field above 4000 Oe. The magnetic ordering temperature is further increased to 210 K for x = 2.5 and to 282 K for x = 3.0. The spontaneous magnetization of YCo2.0Mn3.0Ga7.0 is 0.575 mu B/f.u. at 5 K with a canted magnetic structure.

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn1-xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni hits it chemical valence of 2 +. According to the . We studied the electronic magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at similar to 2 eV below the Fermi energy E-F, which is of Ni 3d origin. No emission was found at E-A, suggesting the insulating nature of the film. (c) 2005 Elsevier Ltd. All rights reserved.

Magnetic properties of Mn-implanted n-type Ge

Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 10(16) cm(-2). Subsequent annealing was performed on the samples at 400 degreesC and 600 degreesC in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples. (C) 2004 Elsevier B.V. All rights reserved.

Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs

Zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs matrices are fabricated by in situ postgrowth annealing diluted magnetic semiconductor (Ga,Mn)As films with Mn concentration ranging from 2.6% to 8% at 650 degrees C. Magnetization measurements show that memory effect and slow magnetic relaxation, the typical characteristics of the spin-glass-like phase, occur below the blocking temperature of 45 K in samples with high Mn concentration, while for samples with low Mn concentration, ferromagnetic order remains up to 360 K. The behavior of low-temperature spin dynamics can be explained by the hierarchical model. (c) 2007 American Institute of Physics.

Magnetic properties of tin-doped magnetite nanoparticles

Structural and magnetic characteristics of Fe3-xSnxO4 (x < 0.3) nanoparticles synthesized using the precipitation exchange method have been investigated by X-ray diffraction, transmission electron microscope, Mossbauer spectra, X-ray photoelectron spectroscopy and magnetization measurement. The mean particle dimension decreases from 8 to 6 nm, the lattice parameters enlarge, the saturation magnetization decreases, as well as the magnetization and the coercive field increase, with increasing tin-content. The paramagnetic property of the specimens indicates that the replacement of Fe3+ by Sn4+ on the octahedral sites of Fe3O4 causes a progressive lowering of the Curie temperature and the Curie temperatures of the materials are all lower than that of crystallite tin-doped magnetite. This striking debasing is due to the lessening of the grain size. This is the smallest size reported thus far for paramagnetic tin-doped magnetite particles. (c) 2006 Elsevier B.V. All rights reserved.

Investigation of Mn-doped Si films prepared by magnetron cosputtering

Mn-doped Si films were prepared on Si(001) substrates by magnetron cosputtering and post-annealing process. The structural, morphological and magnetic properties of the films have been investigated. X-ray diffraction results show that the as-prepared film is amorphous. By annealing at 800 degrees C, however, the film is crystallized. There is no secondary phase found except Si in the two films. Chemical mapping shows that no segregation of the Mn atoms appears in the annealed film. Atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. The field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 Elsevier B.V. All rights reserved.

Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires

We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium oxide nanowires in flowing ammonia at high temperature. Microstructure analysis indicates that the GaMnN nanowires have wurtzite GaN structure without Mn precipitates or Mn-related second phases. Magnetism evolution due to nitrogen doping in manganese-gallium oxide nanowires was evaluated by magnetic measurements. Magnetic measurement reveals that the magnetization increases with the increase of nitrogen concentration. Ferromagnetic ordering exists in the GaMnN nanowires, whose Curie temperature is above room temperature. Luminescence evolution was investigated by the cathodoluminesence measurement for a single nanowire and photoluminescence measurement in a temperature range between 10 and 300 K. Experimental results indicate that optical properties can be modulated by nitrogen doping in manganese-gallium oxide nanowires. (c) 2005 Elsevier B.V. All rights reserved.

Magnetism and photoluminescence in manganese-gallium oxide nanowires with monoclinic and spinel structures

Manganese-gallium oxide nanowires were synthesized via in situ Mn doping during nanowire growth using a vapor phase evaporation method. The microstructure and composition of the products were characterized via transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The field and temperature dependence of the magnetization reveal the obvious hysteresis loop and large magnitude of Curie-Weiss temperature. The photoluminescence of the manganese-gallium oxide nanowires were studied in a temperature range between 10 and 300 K. A broad green emission band was observed which is attributed to the T-4(1)-(6)A(1) transition in Mn2+ (3d(5)) ions. (c) 2005 Elsevier B.V. All rights reserved.

Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

The micro-magnetic structures of Mn+ ion-implanted GaSb

The micro-magnetic structures of Mn+ ion-implanted GaSb are studied using a magnetic force microscope (MFM). MFM images reveal that there are many magnetic domains with different magnetization directions in our samples. The magnetic domain structures and the magnetization direction of typical MFM patterns are analyzed by numeric simulation.

Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds

A systematic study of syntheses and magnetic properties of the Nd-3 Fe29-xCrx (x=4.5, 4.7, 5.0, and 5.5) compounds has been performed. The single-phase compounds of Nd3Fe29-xCrx can be formed in the range 4.5 less than or equal to x less than or equal to 5.5. The Curie temperature Tc, the saturation magnetization M-S at 4.2 K, the anisotropy field H-A at 4.2 K and room temperature, and the intra-sublattice exchange coupling parameter j(FeFe) at 4.2 K for the Nd3Fe29-xCrx compounds decrease with increasing Cr composition from x=4.5 to 5.5, respectively. Nitrogenation and carbonation, unlike hydrogenation, result mainly in improvements of the Curie temperature, the saturation magnetization and the anisotropy field at 4.2 K and room temperature for the Nd3Fe29-xCrx compounds compared with their parent compounds.

Fe-57 Mossbauer spectroscopic and magnetic studies of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

Mossbauer spectra for Fe atoms in the series of R3Fe29-xVx (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) compounds were collected at 4.2 K. The ratio of 14.5 T/mu(B) between the average hyperfine field B-hf and the average Fe magnetic moment mu(Fe)(MS), obtained from our data, in Y3Fe29-xVx is in agreement with that deduced from the RxTy alloys by Gubbens et al. The average Fe magnetic moments mu(Fe)(MS) in these compounds at 4.2 K, deduced from our Mossbauer spectroscopic studies, are in accord with the results of magnetization measurement. The average hyperfine field of the Fe sites for R3Fe29-xVx at 4.2 K increases with increasing values of the rare earth effective spin (g(J) - 1) J, which indicates that there exists a transferred spin polarization induced by the neighboring rare earth atom.