Crystal structure of 8-methoxy-3-dibromoacetylcoumarin, C12H8Br2O4

C12H8BT2O4. monoclinic, P12(1)/cl (No. 14), a = 11.546(2) Angstrom, b = 6.885(4) Angstrom,= 15.949(3) Angstrom, beta = 101.75(2)degrees, V= 1241.3 Angstrom(3), Z = 4, p(m) = 2.040 g.cm(-3), R-all(F) = 0.039, wR(all)(F) = 0.043, T = 300 K.

Approximate multipole coefficients of RF ion traps as functions of aperture size

In this study we present approximate analytical expressions for estimating the variation in multipole expansion coefficients as a function of the size of the apertures in the electrodes in axially symmetric (3D) and two-dimensional (2D) ion trap ion traps. Following the approach adopted in our earlier studies which focused on the role of apertures to fields within the traps, here too, the analytical expression we develop is a sum of two terms, A(n,noAperiure), the multipole expansion coefficient for a trap with no apertures and A(n,dueToAperture), the multipole expansion coefficient contributed by the aperture. A(n,noAperture) has been obtained numerically and A(n,dueToAperture) is obtained from the n th derivative of the potential within the trap. The expressions derived have been tested on two 3D geometries and two 2D geometries. These include the quadrupole ion trap (QIT) and the cylindrical ion trap (CIT) for 3D geometries and the linear ion trap (LIT) and the rectilinear ion trap (RIT) for the 2D geometries. Multipole expansion coefficients A(2) to A(12), estimated by our analytical expressions, were compared with the values obtained numerically (using the boundary element method) for aperture sizes varying up to 50% of the trap dimension. In all the plots presented, it is observed that our analytical expression for the variation of multipole expansion coefficients versus aperture size closely follows the trend of the numerical evaluations for the range of aperture sizes considered. The maximum relative percentage errors, which provide an estimate of the deviation of our values from those obtained numerically for each multipole expansion coefficient, are seen to be largely in the range of 10-15%. The leading multipole expansion coefficient, A(2), however, is seen to be estimated very well by our expressions, with most values being within 1% of the numerically determined values, with larger deviations seen for the QIT and the LIT for large aperture sizes. (C) 2010 Elsevier B.V. All rights reserved.

Optical nonlinearity in lead sulfide microtowers

Lead sulfide (PbS) microtowers on silicon substrates, having the physical properties of bulk PbS, have been synthesized. Optical nonlinearity studies using the open aperture z-scan technique employing 5 ns and 100 fs laser pulses reveal effective two-photon type absorption. For nanosecond excitation the nonlinear absorption coefficients (beta(eff)) are in the order of 10(-11) m W-1, two orders of magnitude less than the values reported for quantum confined PbS nanocrystals. For femtosecond excitation beta(eff) is of the order of 10(-14) m W-1. These results obtained in bulk PbS experimentally confirm the importance of quantum confinement in the enhancement of optical nonlinearities in semiconductor materials.

ADC Static Characterization Using Nonlinear Ramp Signal

Static characteristics of an analog-to-digital converter (ADC) can be directly determined from the histogram-based quasi-static approach by measuring the ADC output when excited by an ideal ramp/triangular signal of sufficiently low frequency. This approach requires only a fraction of time compared to the conventional dc voltage test, is straightforward, is easy to implement, and, in principle, is an accepted method as per the revised IEEE 1057. However, the only drawback is that ramp signal sources are not ideal. Thus, the nonlinearity present in the ramp signal gets superimposed on the measured ADC characteristics, which renders them, as such, unusable. In recent years, some solutions have been proposed to alleviate this problem by devising means to eliminate the contribution of signal source nonlinearity. Alternatively, a straightforward step would be to get rid of the ramp signal nonlinearity before it is applied to the ADC. Driven by this logic, this paper describes a simple method about using a nonlinear ramp signal, but yet causing little influence on the measured ADC static characteristics. Such a thing is possible because even in a nonideal ramp, there exist regions or segments that are nearly linear. Therefore, the task, essentially, is to identify these near-linear regions in a given source and employ them to test the ADC, with a suitable amplitude to match the ADC full-scale voltage range. Implementation of this method reveals that a significant reduction in the influence of source nonlinearity can be achieved. Simulation and experimental results on 8- and 10-bit ADCs are presented to demonstrate its applicability.

Mass analyser optics for wide-beam ion sources in ion implantation systems

Ion implantation systems, used for producing high-current ion beams, employ wide-beam ion sources which are rotated through 90 degrees . These sources need mass analyser optics which are different from the conventional design. The authors present results of calculation of the image distance as a function of entrance and exit angles of a sector magnet mass analyser having such a source. These computations have been performed for the magnetic deflection angles 45 degrees , 60 degrees and 90 degrees . The details of the computations carried out using the computer program MODBEAM, developed for this purpose, are also discussed.

Optimization of ion energy spread in inductively coupled plasma source designed for focused ion beam applications

The ion energy distribution of inductively coupled plasma ion source for focused ion beam application is measured using a four grid retarding field energy analyzer. Without using any Faraday shield, ion energy spread is found to be 50 eV or more. Moreover, the ion energy distribution is found to have double peaks showing that the power coupling to the plasma is not purely inductive, but a strong parasitic capacitive coupling is also present. By optimizing the various source parameters and Faraday shield, ion energy distribution having a single peak, well separated from zero energy and with ion energy spread of 4 eV is achieved. A novel plasma chamber, with proper Faraday shield is designed to ignite the plasma at low RF powers which otherwise would require 300-400 W of RF power. Optimization of various parameters of the ion source to achieve ions with very low energy spread and the experimental results are presented in this article. (C) 2010 Elsevier Ltd. All rights reserved.

Photobleaching reduced fluorescence correlation spectroscopy

A dual beam excitation-depletion pulse technique is proposed for photobleaching reduced fluorescence correlation spectroscopy (FCS). Excitation pulse promote the molecules to the excited singlet state (S-1), a fraction of that population goes to energetically favorable metastable triplet state (T-1) due to strong intersystem crossing. The depletion pulse followed by excitation pulse instantaneously depletes the triplet states thereby recycling the bleached molecules back to the ground state (S-0). FCS study on diffusing Fluorescein and Rh6G molecules show more than 95% reduction in triplet state population and the associated photobleaching. (c) 2010 American Institute of Physics.

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Comparative study of air heating solar collectors

Three types of conventional solar air heater are designed such that their heat absorbing areas and the pressure drops across them are equal for equal air mass flow rates per unit collector area. The results of thermal performance tests conducted simultaneously on these collectors, under the same environmental conditions, are presented.

Discharge studies in a triode ion plating system

A triode ion plating system with a hot cathode has been described. The performance of the system is studied, by studying the discharge behaviour from the bias voltage and bias current point of view, at the substrate, for different anode currents, filament voltages and pressures. The observed substrate bias current for different operating parameters is not found to be normal. The behaviour is explained on the bias of ionisation at the respective electrodes. The studies have revealed the importance of inter-electrode spacing in the enhancement of ionisation, in ion plating systems, at lower pressures.

On the uniformity of film thickness on rotating spherical substrates on a planar work holder

Curves for the uniformity in film thickness on spherical substrates are drawn for various geometries. The optimum source-to-substrate height for maximum uniformity of the film thickness is determined. These data are approximated to achieve uniform thickness on a large number of small planar substrates loaded on a large spherical substrate holder, the appropriate geometry being selected on the basis of the radius of curvature of the substrate holder.

Electrical switching behavior of amorphous Al23Te77 thin film sample

The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

High Starting Torque Drive For Step Motors

A bi-level voltage drive circuit for step motors that can provide the required high starting torque is described. In this circuit, microprocessor 8085 and parallel port interface 8255 are used for generating the code sequence. The inverter buffer 74LS06 provides enough drive to a darlington pair transistor. The comparator LM339 is used to compare the required voltage for step motor with the set value. This circuit can be effectively used for step motors having maximum rated current of less than 15 A with proper heat sink.