Biologischer Lichtsammler (LHCII) für Halbleiternanokristalle (Quantum Dots)

Der light harvesting complex II (LHCII) ist ein pflanzliches Membranprotein, das in seiner trimeren Form über 40 Chlorophylle bindet. In der Pflanze kann er besonders effizient Licht sammeln und die Anregungsenergie anschließend fast verlustfrei über andere chlorophyll-bindende Proteine an die Reaktionszentren weiterleiten. Aufgrund dieser besonderen Eigenschaften war es ein Ziel dieser Arbeit, rekombinanten LHCII mit synthetischen Komponenten zu kombinieren, die zur Ladungstrennung befähigt sind. Zu diesem Zweck wurden unter anderem Halbleiternanokristalle (Quantum Dots, QDs) ausgewählt, die je nach Zusammensetzung sowohl als Energieakzeptoren als auch als Energiedonoren in Frage kamen. Durch Optimierung des Puffers gelang es, die Fluoreszenzquantenausbeute der QDs in wässriger Lösung zu erhöhen und zu stabilisieren, so dass die Grundvoraussetzungen für die spektroskopische Untersuchung verschiedener LHCII-QD-Hybridkomplexe erfüllt waren.rnUnter Verwendung bereits etablierter Affinitätssequenzen zur Bindung des LHCII an die QDs konnte gezeigt werden, dass die in dieser Arbeit verwendeten Typ-I QDs aus CdSe und ZnS sich kaum als Energie-Donoren für den LHCII eignen. Ein Hauptgrund lag im vergleichsweise kleinen Försterradius R0 von 4,1 nm. Im Gegensatz dazu wurde ein R0 von 6,4 nm für den LHCII als Donor und Typ-II QDs aus CdTe, CdSe und ZnS als Akzeptor errechnet, wodurch in diesem System eine höhere Effizienz des Energietransfers zu erwarten war. Fluoreszenzspektroskopische Untersuchungen von Hybridkomplexen aus LHCII und Typ-II QDs ergaben eine hohe Plausibilität für einen Fluoreszenz Resonanz Energietransfer (FRET) vom Lichtsammler auf die QDs. Weitere QD-Affinitätssequenzen für den LHCII wurden identifiziert und deren Bindekonstanten ermittelt. Versuche mit dem Elektronenakzeptor Methylviologen lieferten gute Hinweise auf eine LHCII-sensibilisierte Ladungstrennung der Typ-II QDs, auch wenn dies noch anhand alternativer Messmethoden wie z.B. durch transiente Absorptionsspektroskopie bestätigt werden muss. rnEin weiteres Ziel war die Verwendung von LHCII als Lichtsammler in dye-sensitized solar cells (DSSC). Geeignete dotierte TiO2-Platten wurden ermittelt, das Verfahren zur Belegung der Platten optimiert und daher mit wenig Aufwand eine hohe LHCII-Belegungsdichte erzielt. Erste Messungen von Aktionsspektren mit LHCII und einem zur Ladungstrennung fähigen Rylenfarbstoff zeigen eine, wenn auch geringe, LHCII sensibilisierte Ladungstrennung. rnDie Verwendung von Lanthanide-Binding-Tags (LBTs) ist ein potentielles Verfahren zur in vivo-Markierung von Proteinen mit Lanthanoiden wie Europium und Terbium. Diese Metalle besitzen eine überdurchschnittlich lange Lumineszenzlebensdauer, so dass sie leicht von anderen fluoreszierenden Molekülen unterschieden werden können. Im Rahmen der vorliegenden Arbeit gelang es, eine LBT in rekombinanten LHCII einzubauen und einen Lumineszenz Resonanz Energietransfer (LRET) vom Europium auf den LHCII nachzuweisen.rn

Studio della struttura locale di droganti in quantum dots mediante spettroscopia di assorbimento di raggi X

La capacità della spettroscopia di assorbimento di riuscire a determinare la struttura locale di campioni di ogni tipo e concentrazione, dagli elementi puri ai più moderni materiali nanostrutturati, rende lo studio dei meccanismi di incorporazione di droganti in matrici di semiconduttori il campo che meglio ne esprime tutto il potenziale. Inoltre la possibilità di ottenere informazioni sulla struttura locale di un particolare elemento in traccia posto in sistemi senza ordine a lungo raggio risulta, ovviamente, nello studio dei semiconduttori di grandissimo interesse. Tuttavia, la complessità di determinate strutture, generate dalla incorporazione di elementi eterovalenti che ne modificano la simmetria, può far si che all’analisi sperimentale si debbano affiancare dei metodi avanzati ab-initio. Questi approcci garantiscono, attraverso la simulazione o di strutture atomiche o dello stesso spettro XAS, di ottenere una più completa e precisa interpretazione dei dati sperimentali. Nella fase preliminare di questo elaborato si illustrerà la fenomenologia della spettroscopia di assorbimento e i fondamenti teorici che stanno alla base dell’analisi della struttura fine di soglia. Si introdurranno contemporaneamente le tecniche sperimentali con cui si realizzano le misure di spettri di assorbimento su una beamline che sfrutta sorgente di radiazione di sincrotrone facendo riferimento agli strumenti montati sulla linea LISA (o BM08) presso l’European Synchrotron Radiation Facility di Grenoble su cui si sono realizzati gli esperimenti di questo lavoro. Successivamente si realizzerà una rassegna di alcuni esperimenti simbolo della analisi della struttura locale di droganti in semiconduttori mediante XAFS, andando ad approfondire i metodi sperimentali associati. Nella parte principale della tesi verranno descritti alcuni tipi di analisi avanzate effettuate su Colloidal Quantum Dots a base di solfuro di piombo drogati con antimonio. Tali sistemi, particolarmente interessanti per potenziali applicazioni in campo optoelettrico, sono stati analizzati mediante misure di fluorescenza ottenute sulla beamline LISA. La fase di analisi ha visto la progettazione di una suite di programmi in C++ per realizzare simulazioni di uno spettro XAS teorico completo basato su strutture ottenute (anche esse) da metodi ab-initio.

Synthesis and Surface Modification of CdSe and CdS Quantum Dots Exhibiting High Quantum Yield

The thesis investigates the effect of surface treatment with various reducing and oxidizing agents on the quantum yield (QY) of CdSe and CdS quantum dots (QDs). The QDs, as synthesized by the organometallic method, contained defect sites on their surface that trapped photons and prevented their radiative recombination, therefore resulting in adecreased QY. To passivate these defect sites and enhance the QY, the QDs were treated with various reducing and oxidizing agents, including: sodium borohydride (NaBH4), calcium hydride (CaH2), hydrazine (N2H4), benzoyl peroxide (C14H10O4), and tert-butylhydroperoxide (C4H10O2). It was hypothesized that the reducing/oxidizing agents reduced the ligands on the QD surface, causing them to detach, thereby allowing oxygen from atmospheric air to bind to the exposed cadmium. This cadmium oxdide (CdO) layeraround the QD surface satisfied the defect sites and resulted in an increased QY. To correlate what effect the reducing and oxidizing agents were having on the optical properties of the QDs, we investigated these treatments on the following factors:chalcogenide (Se vs. S), ligand (oleylamine vs. OA), coordinating solvent (ODE vs.TOA), and dispersant solvent (chloroform vs. toluene) on the overall optical properties of the QDs. The QY of each sample was calculated before and after the various surface treatments from ultra-violet visible spectroscopy (UV-Vis) and fluorescence spectroscopy data to determine if the treatment was successful.From our results, we found that sodium borohydride was the most effective surface treatment, with 10 of the 12 treatments resulting in an increased QY. Hydrazine, on the other hand, was the least effective treatments, as it quenched the QD fluorescence in every case. From these observations, we hypothesize that the effectiveness of the QD surface treatments was dependent on reaction rate. More specifically, when the surface treatment reaction happened too quickly, we hypothesize that the QDs began to aggregate, resulting in a quenched fluorescence. Furthermore, we believe that the reactionrate is dependent on concentration of the reducing/oxidizing agents, solubility of the agents in each solvent, and reactivity of the agents with water. The quantum yield of the QDs can therefore be maximized by slowing the reaction rate of each surface treatment toa rate that allows for the proper passivation of defect sites.

Investigation on colloidal Te doped CdSe (CdSe:Te) quantum dots suspension in a liquid-core fiber

Here, we demonstrate the use of a colloidal CdSe:Te quantum dots suspension as active liquid-core in a specially designed optical element, based on a double-clad optical fiber structure. The liquid-core fiber was realized by filling the hollow core of a capillary and waveguiding of the core was ensured by using a liquid host that exhibits a larger refractive index than the cladding material of the capillary. Since the used capillary possessed a cladding waveguide structure, we obtained a liquid-core double-clad structure. To seal the liquid-core fiber and e.g. prevent the formation of bubbles, we developed a technique based on SMA connectors. The colloidal CdSe:Te quantum dots were excited by cladding-pumping using a pump laser at 532nm operating in the continuous-wave regime. We investigated the photoluminescence emitted from the colloidal CdSe:Te quantum dots suspension liquid-core and guided by the double-clad fiber structure. We observed a red shift of the (core) emission, that depends on the liquid-core fiber length and the pump power. This shift is due to the absorption of unexcited colloidal quantum dots and due to the waveguiding properties of the core. Here we report a core photoluminescence output power of 79.2μW (with an integrated brightness of ≈ 215.5 W/cm2sr ). Finally, we give an explanation, why lasing could not be observed in our experiments when setup as a liquid-core fiber cavity.

Mode-locked diode-pumped vanadate lasers operated with PbS quantum dots

The use of glasses doped with PbS nanocrystals as intracavity saturable absorbers for passive Q-switching and mode locking of c-cut Nd:Gd0.7Y0.3VO4, Nd:YVO4, and Nd:GdVO4 lasers is investigated. Q-switching yields pulses as short as 35 ns with an average output power of 435 mW at a repetition rate of 6–12 kHz at a pump power of 5–6 W. Mode locking through a combination of PbS nanocrystals and a Kerr lens results in 1.4 ps long pulses with an average output power of 255 mW at a repetition rate of 100 MHz.

Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence.

Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

Growth and characterization of InGaN/GaN quantum dots for violet/blue applications

We report on plasma-assisted molecular beam epitaxy growth and characterization of InGaN/GaN quantum dots (QDs) for violet/blue applications.

Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots

We present a fast, highly sensitive, and efficient potentiometric glucose biosensor based on functionalized InN quantum-dots (QDs). The InN QDs are grown by molecular beam epitaxy. The InN QDs are bio-chemically functionalized through physical adsorption of glucose oxidase (GOD). GOD enzyme-coated InN QDs based biosensor exhibits excellent linear glucose concentration dependent electrochemical response against an Ag/AgCl reference electrode over a wide logarithmic glucose concentration range (1 × 10−5 M to 1 × 10−2 M) with a high sensitivity of 80 mV/decade. It exhibits a fast response time of less than 2 s with good stability and reusability and shows negligible response to common interferents such as ascorbic acid and uric acid. The fabricated biosensor has full potential to be an attractive candidate for blood sugar concentration detection in clinical diagnoses.

Self-assembled MgxZn1−xO quantum dots (0 ≤ x ≤ 1) on different substrates using spray pyrolysis methodology

By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled MgxZn1−xO quantum dots (size [similar]4–6 nm) in the overall range of compositions 0 ≤ x ≤ 1 on c-sapphire, Si (100) and quartz substrates. Composition of the quantum dots was determined by means of transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDAX) and X-ray photoelectron spectroscopy. Selected area electron diffraction reveals the growth of single phase hexagonal MgxZn1−xO quantum dots with composition 0 ≤ x ≤ 0.32 by using a nominal concentration of Mg in the range 0 to 45%. Onset of Mg concentration about 50% (nominal) forces the hexagonal lattice to undergo a phase transition from hexagonal to a cubic structure which resulted in the growth of hexagonal and cubic phases of MgxZn1−xO in the intermediate range of Mg concentrations 50 to 85% (0.39 ≤ x ≤ 0.77), whereas higher nominal concentration of Mg ≥ 90% (0.81 ≤ x ≤ 1) leads to the growth of single phase cubic MgxZn1−xO quantum dots. High resolution transmission electron microscopy and fast Fourier transform confirm the results and show clearly distinguishable hexagonal and cubic crystal structures of the respective quantum dots. A difference of 0.24 eV was detected between the core levels (Zn 2p and Mg 1s) measured in quantum dots with hexagonal and cubic structures by X-ray photoemission. The shift of these core levels can be explained in the frame of the different coordination of cations in the hexagonal and cubic configurations. Finally, the optical absorption measurements performed on single phase hexagonal MgxZn1−xO QDs exhibited a clear shift in optical energy gap on increasing the Mg concentration from 0 to 40%, which is explained as an effect of substitution of Zn2+ by Mg2+ in the ZnO lattice.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots

The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs1−xSbx layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined through cross-sectional scanning tunnelling microscopy and used as input parameters in an 8 × 8 k·p model. As the Sb content is increased, there are two competing effects determining carrier confinement and the oscillator strength: the increased QD height and reduced strain on one side and the reduced QD-capping layer valence band offset on the other. Nevertheless, the observed evolution of the photoluminescence (PL) intensity with Sb cannot be explained in terms of the oscillator strength between ground states, which decreases dramatically for Sb > 16%, where the band alignment becomes type II with the hole wavefunction localized outside the QD in the capping layer. Contrary to this behaviour, the PL intensity in the type II QDs is similar (at 15 K) or even larger (at room temperature) than in the type I Sb-free reference QDs. This indicates that the PL efficiency is dominated by carrier dynamics, which is altered by the presence of the GaAsSb capping layer. In particular, the presence of Sb leads to an enhanced PL thermal stability. From the comparison between the activation energies for thermal quenching of the PL and the modelled band structure, the main carrier escape mechanisms are suggested. In standard GaAs-capped QDs, escape of both electrons and holes to the GaAs barrier is the main PL quenching mechanism. For small-moderate Sb (<16%) for which the type I band alignment is kept, electrons escape to the GaAs barrier and holes escape to the GaAsSb capping layer, where redistribution and retraping processes can take place. For Sb contents above 16% (type-II region), holes remain in the GaAsSb layer and the escape of electrons from the QD to the GaAs barrier is most likely the dominant PL quenching mechanism. This means that electrons and holes behave dynamically as uncorrelated pairs in both the type-I and type-II structures.