Designing output-feedback predictive controllers by reverse-engineering existing LTI controllers

An approach to designing a constrained output-feedback predictive controller that has the same small-signal properties as a pre-existing output-feedback linear time invariant controller is proposed. Systematic guidelines are proposed to select an appropriate (non-unique) realization of the resulting state observer. A method is proposed to transform a class of offset-free reference tracking controllers into the combination of an observer, steady-state target calculator and predictive controller. The procedure is demonstrated with a numerical example. © 2013 IEEE.

What is the weakest topology in which feedback stability is robust?

Mathematical theorems in control theory are only of interest in so far as their assumptions relate to practical situations. The space of systems with transfer functions in ℋ∞, for example, has many advantages mathematically, but includes large classes of non-physical systems, and one must be careful in drawing inferences from results in that setting. Similarly, the graph topology has long been known to be the weakest, or coarsest, topology in which (1) feedback stability is a robust property (i.e. preserved in small neighbourhoods) and (2) the map from open-to-closed-loop transfer functions is continuous. However, it is not known whether continuity is a necessary part of this statement, or only required for the existing proofs. It is entirely possible that the answer depends on the underlying classes of systems used. The class of systems we concern ourselves with here is the set of systems that can be approximated, in the graph topology, by real rational transfer function matrices. That is, lumped parameter models, or those distributed systems for which it makes sense to use finite element methods. This is precisely the set of systems that have continuous frequency responses in the extended complex plane. For this class, we show that there is indeed a weaker topology; in which feedback stability is robust but for which the maps from open-to-closed-loop transfer functions are not necessarily continuous. © 2013 Copyright Taylor and Francis Group, LLC.

Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) films

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible-far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. © 2013 Elsevier B.V.

Delayed-decision making in noisy bistable switches

Bistable switches are frequently encountered in biological systems. Typically, a bistable switch models a binary decision where each decision corresponds to one of the two stable equilibria. Recently, we showed that the global decision-making process in bistable switches strongly depends on a particular equilibrium point of these systems, their saddle point. In particular, we showed that a saddle point with a time-scale separation between its attractive and repulsive directions can delay the decision-making process. In this paper, we study the effects of white Gaussian noise on this mechanism of delayed decision-making induced by the saddle point. Results show that the mean decision-time strongly depends on the balance between the initial distance to the separatrix and the noise strength. © IFAC.

Early ontogeny of Ancherythroculter nigrocauda and effects of delayed first feeding on larvae

Development of embryos and larvae in Ancherythroculter nigrocauda Yih et Woo (1964) and effects of delayed first feeding on larvae were observed after artificial fertilization. The fertilized eggs were incubated at an average temperature of 26.5 degrees C (range: 25.7-27) and the larvae reared at temperatures ranging from 21.8 to 28 degrees C. First cleavage was at 50 min, epiboly began at 7 h 5 min, heartbeat reached 72 per min at 24 h 40 min and hatching occurred at 43 h 15 min after insemination. Mean total length of newly hatched larvae was 4.04 +/- 0.03 mm (n = 15). A one-chambered gas bladder was observed at 70 h 50 min, two chambers occurred at 15 days, and scales appeared approximately 30 days after hatching. Larvae began to feed exogenously at day 4 post-hatch at an average temperature of 24 degrees C. Food deprivation resulted in a progressive atrophy of skeletal muscle fibres, deterioration of the larval digestive system and cessation of organ differentiation. Larval growth under food deprivation was significantly affected by the time of first exogenous feeding. Starved larvae began to shrink, with negative growth from day 6 post-hatch. The point of no return (PNR) was reached at day 11 after hatching. Mortality of starved larvae increased sharply from day 12 after hatching.

Lineshape Analysis of the Beat Signal Between Optical Carrier and Delayed Sidebands

This paper presents the lineshape analysis of the beat signal between the optical carrier and the shifted and delayed side-bands produced by sinusoidal amplitude modulation. It is shown that the beat signal has a typical lineshape with a very narrow delta-peak superposed on a quasi-Lorentzian profile. Theoretical explanation for the appearance of this peak has been given based on optical spectral structure constructed by a large number of optical wave trains. It is predicted that the delta-peak is originated from the beat between the wave trains in the carrier and those in the delayed sidebands when their average coherence length is longer than the delay line. Experiments carried out using different delay lines clearly show that the delta-peak is always located at the modulation frequency and decreases with the increasing delay line. Our analysis explicitly indicates that the linewidth is related to the observation time. It is also suggested that the disappearance of the delta-peak can be used as the criterion of coherence elimination.

Distributed Feedback Laser with Sampled Grating

A distributed feedback laser with the sampled grating has been designed and fabricated. The typical threshold current of the sampled grating based DFB laser is 32 mA, and the output power is about 10mW at the injected current of 100 mA. The lasing wavelength is 1.5564 mu m, which is the -1(st) order mode of the sampled grating.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. (C) 2009 Optical Society of America

Photonic crystal distributed feedback quantum cascade laser fabricated with holographic technique

Electrically pumped, edge-emitting, singlemode operation of a two-dimensional photonic crystal distributed feedback (PCDFB) quantum cascade laser emitting at similar to 7.8 mu m is demonstrated. The two-beam holographic technique combined with wet-etching process is successfully used to de. ne a square-lattice PCDFB structure on the top grating layer of the laser. This simple PC fabrication method may open exciting opportunities for the wide application of PCDFB lasers.

A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser

A new method for fabricating electroabsorption modulator integrated with a distributed feedback laser (EML) was proposed. With the method we fabricated a selective area growth double stack active layer EML (SAG-DSAL-EML). Through comparing with other fabrication methods of EMLs, the characters and the merits of the new method presented in this paper were discussed.

Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality

We demonstrate the fabrication and characterization of photonic-crystal distributed-feedback quantum cascade laser emitting at 4.7 mu m. The tilted rectangular-lattice PCDFB structure was defined using a multi-exposure of two-beam holographic lithography. The devices exhibit the near-diffraction-limited beam emission with the full width at half maximum of the far-field divergence angles about 4.5 degrees and 2.5 degrees for stripe widths of 55 mu m and 95 mu m, respectively. Single-mode emission with a side mode suppression ratio of approximate to 20 dB is achieved in the temperature range (80-210 K). The single-facet output power is above 1 W for a 95 mu m x 2.5 mm laser bar at 85 K in pulsed operation. (C) 2009 Optical Society of America

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using tirisilane

We explored the deposition of hydrogenated amorphous silicon (a-Si: H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of similar to 1.5 for the same hydrogen dilution (R = [H-2]/[Si3H8] or [H-2]/[Si2H6])- Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si: H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (V-oc) on hydrogen dilution was investigated. V-oc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.

Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings

Ridge-waveguide AlGaInAs/AlGaAs distributed feedback lasers with lattice-matched GaInP gratings were fabricated and their light-current characteristics, spectrum and far-field characteristics were measured. On the basis of our experimental results we analyze the effect of the electron stopper layer on light-current performance using the commercial laser simulation software PICS3D. The simulator is based on the self-consistent solution of drift diffusion equations, the Schrodinger equation, and the photon rate equation. The simulation results suggest that, with the use of a 80 nm-width p-doped Al0.6GaAs electron stopper layer, the slope efficiency can be increased and the threshold current can be reduced by more than 10 mA.

Electrical and optical coupling in an electroabsorption modulator integrated with a DFB laser

Electrical and optical coupling in an electroabsorption (EA) modulator integrated with a distributed feedback (DFB) laser have been investigated. The integrated device is treated as a three-port optoelectronic device with two electrical ports and one optical output port. The scattering parameters of this three-port device have been measured in the designed experiment. The measured results indicate that there exists the electrical coupling between the DFB laser and EA modulator of the integrated light source whenever the current applied to the laser section is below or above the threshold current, and the optical coupling will have stronger influence on the frequency responses than the electrical coupling when the bias current is above the threshold. A small-signal equivalent circuit model for the integrated device is established considering both the electrical and internal optical coupling. Experiments show that the equivalent circuit model is reasonable and the determined element values are correct. Based on the measurement and modeling, the influences of the electrical and optical coupling on the high-frequency responses are investigated and the effective measure to eliminate the additional modulation in the DFB laser are discussed.