Life design: Un paradigma per la costruzione della vita professionale nel XXI secolo

In questo inizio di secolo, la nuova organizzazione sociale del lavoro pone una serie di domande e di sfide ai ricercatori che intendono aiutare le persone a progettare la loro vita lavorativa. Nell'era della globalizzazione anche per quanto riguarda il career counseling, abbiamo deciso di affrontare queste problematiche e di dare delle risposte che si caratterizzassero come innovative attraverso la costituzione di un forum di discussione internazionale. Si è proceduto in questo modo per evitare le difficoltà che generalmente si incontrano quando si mettono a punto dei modelli e dei metodi in un Paese e poi si esportano in altre culture con l'intento di adattarli alle stesse. Questo articolo presenta i primi risultati della collaborazione che si è registrata - un modello e dei metodi per la consulenza di orientamento. Il modello per l'intervento nell'ambito dell'approccio Life Design si caratterizza per cinque presupposti relativi al modo di vedere le persone e la loro vita lavorativa. Essi riguardano le possibilità contestuali, i processi dinamici, i progressi non-lineari, le molteplici prospettive e la presenza di pattern personali. Partendo da questi cinque presupposti abbiamo messo a punto un modello basato sull'epistemologia del costruzionismo sociale, che sostiene che la conoscenza e l'identità di un individuo sono i prodotti dell'interazione sociale e che il significato è costruito attraverso il discorso. Questo approccio fa riferimento anche alla teoria della costruzione di sé di Guichard (2005) e della costruzione della vita professionale di Savickas (2005), che descrivono le azioni utili a facilitare la progettazione del proprio futuro. Particolare attenzione viene data agli interventi nel corso dell'arco di vita, olistici, contestuali e preventivi.

JNK controls the onset of mitosis of planarian stem cells and triggers apoptotic cell death required for regeneration and remodeling

Regeneration of lost tissues depends on the precise interpretation of molecular signals that control and coordinate the onset of proliferation, cellular differentiation and cell death. However, the nature of those molecular signals and the mechanisms that integrate the cellular responses remain largely unknown. The planarian flatworm is a unique model in which regeneration and tissue renewal can be comprehensively studied in vivo. The presence of a population of adult pluripotent stem cells combined with the ability to decode signaling after wounding enable planarians to regenerate a complete, correctly proportioned animal within a few days after any kind of amputation, and to adapt their size to nutritional changes without compromising functionality. Here, we demonstrate that the stress-activated c-jun-NH2-kinase (JNK) links wound-induced apoptosis to the stem cell response during planarian regeneration. We show that JNK modulates the expression of wound-related genes, triggers apoptosis and attenuates the onset of mitosis in stem cells specifically after tissue loss. Furthermore, in pre-existing body regions, JNK activity is required to establish a positive balance between cell death and stem cell proliferation to enable tissue renewal, remodeling and the maintenance of proportionality. During homeostatic degrowth, JNK RNAi blocks apoptosis, resulting in impaired organ remodeling and rescaling. Our findings indicate that JNK-dependent apoptotic cell death is crucial to coordinate tissue renewal and remodeling required to regenerate and to maintain a correctly proportioned animal. Hence, JNK might act as a hub, translating wound signals into apoptotic cell death, controlled stem cell proliferation and differentiation, all of which are required to coordinate regeneration and tissue renewal.

Design of an amplifier and an instrumentation setup for a harsh environment heat flux measurement application – case axial flux electric machine

Measurement is a tool for researching. Therefore, it is important that the measuring process is carried out correctly, without distorting the signal or the measured event. Researches of thermoelectric phenomena have been focused more on transverse thermoelectric phenomena during recent decades. Transverse Seebeck effect enables to produce thinner and faster heat flux sensor than before. Studies about transverse Seebeck effect have so far focused on materials, so in this Master’s Thesis instrumentation of transverse Seebeck effect based heat flux sensor is studied, This Master’s Thesis examines an equivalent circuit of transverse Seebeck effect heat flux sensors, their connectivity to electronics and choosing and design a right type amplifier. The research is carried out with a case study which is Gradient Heat Flux Sensors and an electrical motor. In this work, a general equivalent circuit was presented for the transverse Seebeck effect-based heat flux sensor. An amplifier was designed for the sensor of the case study, and the solution was produced for the measurement of the local heat flux of the electric motor to improve the electromagnetic compatibility.

Lämpövuoanturin mittauselektroniikan suunnittelu ja toteutus

Energian kulutuksen vähentäminen ja sen tutkiminen on kasvavan kiinnostuksen kohteena. Syntyneen lämmön mittaaminen on yksi tapa mitata energian siirtymistä. Lämpötilan mittaaminen on yleistä, vaikka usein on merkittävämpää selvittää missä ja miten lämpöenergia on siirtynyt. Tästä syystä tarvitaan lämpövuoantureita, jotka reagoivat suoraan lämpövuohon eli lämpöenergian siirtymiseen. Tässä tutkimuksessa suunnitellaan ja toteutetaan lämpövuoanturin mittauselektroniikka vaativaan käyttöympäristöön. Työssä käytettävän gradienttilämpövuoanturin tuottama jännitesignaali on mikrovolttiluokkaa ja ympäristön aiheuttama kohina voi olla huomattavasti suurempi. Tämän takia anturin tuottamaa signaalia on vahvistettava, jotta sitä voidaan mitata luotettavasti. Tutkimuksessa keskitytään vahvistimen suunnitteluun, mutta suunnittelussa on otettava huomioon koko järjestelmä. Anturin sähköiset ominaisuudet ja ympäristö asettavat rajoitteita vahvistimelle. Tavoitteena on selvittää miten voidaan mitata mikrovolttien jännitesignaalia mahdollisimman suurella taajuuskaistalla vaativassa käyttöympäristössä. Työn tuloksena syntyi mittalaite, jota voidaan käyttää vaativassa ympäristössä lämpövuon mittaamiseen. Suunnitteluparametrien mukainen vahvistus ja päästökaista sekä offset-jännitteen ryömintä saavutettiin suunnitellulla mittalaitteella, mutta offsetjännite ja kohina olivat hieman suunniteltua suuremmat. Mittalaitteella ja lämpövuoanturilla havaittiin selvästi lämpövuon muutoksia keinotekoisilla herätteillä.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Structural, magnetic, and electronic properties of VxCr2−xS3(0

A new family of vanadium-substituted chromium sulfides (VxCr2-xS3, 0 < x < 2) has been prepared and characterized by powder X-ray and neutron diffraction, SQUID magnetometry, electrical resistivity, and Seebeck coefficient measurements. Vanadium substitution leads to a single-phase region with a rhombohedral Cr2S3 structure over the composition range 0.0 < x e 0.75, while at higher vanadium contents (1.6 e x < 2.0) a second single-phase region, in which materials adopt a cation-deficient Cr3S4 structure, is observed. Materials with the Cr2S3 structure all exhibit semiconducting behavior. However, both transport and magnetic properties indicate an increasing degree of electron delocalization with increasing vanadium content in this compositional region. Materials that adopt a Cr3S4-type structure exhibit metallic behavior. Magnetic susceptibility data reveal that all materials undergo a magnetic ordering transition at temperatures in the range 90–118 K. Low-temperature magnetization data suggest that this involves a transition to a ferrimagnetic state.

A copper-containing oxytelluride as a promising thermoelectric material for waste heat recovery

The new thermoelectric material BiOCuTe exhibits an electrical conductivity of 224 S cm-1 and a Seebeck coefficient of +186 μV K-1 at 373 K, together with an extremely low lattice thermal conductivity of ∼ 0.5 W m-1 K-1. This results in a ZT of 0.42 at 373 K, which increases to 0.66 at the maximum temperature investigated, 673 K.

Synthesis, structural characterisation and thermoelectric properties of Bi1−xPbxOCuSe

The effect of Pb2+ doping on the structure and thermoelectric properties of BiOCuSe (also known as BiCuSeO or BiCuOSe) is described. With increasing Pb2+ content, the expansion of the unit cell results in a weakening of the bonding between the [Bi2(1-x) Pb2xO2]2(1-x)+ and the [Cu2Se2]2(1-x)- layers. The electrical resistivity and Seebeck coefficient decrease in a systematic way with growing Pb2+ levels. The thermal conductivity rises due to the increase of the electronic contribution with doping. The power factor of materials with a 4-5% Pb2+ content takes values of ca. 8 W cm-1 K-2 over a wide temperature range. ZT at 673 K is enhanced by ca. 50% when compared to values found for other dopants, such as Sr2+ or Mg2+.

Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

Electron doping and phonon scattering in Ti1+xS2 thermoelectric compounds

Bulk polycrystalline samples in the series Ti1+xS2 (x = 0 to 0.05) were prepared using high temperature synthesis from the elements and spark plasma sintering. X-ray structure analysis shows that the lattice constant c expands as titanium intercalates between TiS2 slabs. For x=0, a Seebeck coefficient close to -300 μV/K is observed for the first time in TiS2 compounds. The decrease in electrical resistivity and Seebeck coefficient that occurs upon Ti intercalation (Ti off stoichiometry) supports the view that charge carrier transfer to the Ti 3d band takes place and the carrier concentration increases. At the same time, the thermal conductivity is reduced by phonon scattering due to structural disorder induced by Ti intercalation. Optimum ZT values of 0.14 and 0.48 at 300K and 700K, respectively, are obtained for x=0.025.

The interplay of metal-atom ordering, Fermi leveltuning and thermoelectric properties in cobalt shandites Co3M2S2 (M = Sn, In)

A combination of structural, physical and computational techniques including powder X-ray and neutron diffraction, SQUID magnetometry, electrical and thermal transport measurements, DFT calculations and 119Sn Mössbauer and X-ray photoelec-tron spectroscopies has been applied to Co3Sn2-xInxS2 (0 ≤ x ≤ 2) in an effort to understand the relationship between metal-atom ordering and physical properties as the Fermi level is systematically varied. Whilst solid solution behavior is found throughout the composition region, powder neutron diffraction reveals that indium preferentially occupies an inter-layer site over an alternative kagome-like intra-layer site. DFT calculations indicate that this ordering, which leads to a lowering of energy, is related to the dif-fering bonding properties of tin and indium. Spectroscopic data suggest that throughout the composition range 0 ≤ x ≤ 2, all ele-ments adopt oxidation states that are significantly reduced from expectations based on formal charges. Chemical substitution ena-bles the electrical transport properties to be controlled through tuning of the Fermi level within a region of the density of states, which comprises narrow bands of predominantly Co d-character. This leads to a compositionally-induced double metal-to-semiconductor-to-metal transition. The marked increase in the Seebeck coefficient as the semiconducting region is approached leads to a substantial improvement in the thermoelectric figure of merit, ZT, which exhibits a maximum of ZT = 0.32 at 673 K. At 425 K, the figure of merit for phases in the region 0.8 ≤ x ≤ 0.85 is amongst the highest reported for sulphide phases, suggesting these materials may have applications in low-grade waste heat recovery.

Synthesis, characterization and physical properties of the skutterudites YbxFe2Ni2Sb12 (0≤x≤0.4)

The skutterudites YbxFe2Ni2Sb12 (0≤x≤0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im View the MathML source3¯ (a≈9.1 Å) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe2Ni2Sb12 confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2≤T/K≤300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis.

Synthesis and thermoelectric properties of the new skutterudites Yb x Fe2Ni2Sb12 (0 ≤ x ≤ 0.4)

The family of materials Yb x Fe2 Ni 2Sb12 (0 ≤ x ≤ 0.4) has been prepared by solid-state synthesis from the pure elements and characterized by powder X-ray diffraction. These materials crystallize in the skutterudite structure, with the framework voids partially filled with Yb atoms. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements have been performed on hot-pressed samples, and indicate that the thermoelectric performance is significantly improved by increasing the Yb content. The decomposition of the compounds under oxidizing atmosphere at elevated temperatures has also been studied by thermogravimetric analysis. The physical properties and thermal stability of the new compounds are further discussed in comparison with those of the reported isostructural and isoelectronic Yb x Co4Sb12 (0 ≤ x ≤ 0.19).