Preparation and characterization of the stable nc-Si/a-Si : H films

High-quality nc-Si/a-Si:H diphasic films with improved stability were prepared by using the plasma-enhanced chemical vapor deposition technology. In comparison with typical amorphous silicon, the diphasic silicon films possess higher photoconductivity (two orders larger than that of the amorphous silicon film) and fairly good photosensitivity(the ratio of the photo-to dark-conductivity is about 10) and higher stability (the degradation of the photoconductivity is less than 10% after 24h long light soaking with 50 mW/cm(2) intensity at room temperature). In addition, the diphasic silicon film has a better light spectra response in the longer wavelength range. The improvement in photoelectronic properties may be attributed to: the existence of the disorder within the amorphous matrix, which breaks the momentum selection rule in the optical transition and, consequently, results in the large light absorption coefficient and high photosensitivity; the improved medium range order and low gap states density. Excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and reduces the subsequent defect creation.

Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure

ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te-n(ngreater than or equal to2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te-n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te-n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te-n centers are calculated, which decrease with the increasing Te composition in alloys.

Optical properties of nanocrystalline silicon embedded in SiO2

Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Improved diphasic nc-si/a-si : H I-layer materials using PECVD

Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).

Optical image processing using the photoinduced anisotropy of pyrrylfulgide

A synthesized photochromic compound-pyrrylfulgide-is prepared as a thin film doped in a polymethylmethacrylate (PMMA) matrix. Under irradiation by UV light, the film converts from the bleached state into a colored state that has a maximum absorption at 635 nm and is thermally stable at room temperature. When the colored state is irradiated by a linearly polarized 650 nm laser, the film returns to the bleached state; photoinduced anisotropy is produced during this process. Application of optical image processing methods using the photoinduced anisotropy of the pyrrylfulgide/PMMA film is described. Examples in non-Fourier optical image processing, such as contrast reversal and image subtraction and summation, as well as in Fourier optical image processing, such as low-pass filtering and edge enhancement, are presented. (c) 2006 Optical Society of America.

Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector

Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

Low -temperature preparation of ZnO films on Si substrates by MOCVD

ZnO films were deposited on Si（100） substrates at 300℃ by metal - organic chemical vapor deposition（MOCVD）. The effect of different ratios of DEZn to N2O on crystal quality was analyzed. It is found that the optimum ratio of DEZn to N2O is 2.1. And in this optimum growth condition, X - ray diffraction （XRD） and scanning probe morphology （SPM） images indicate that the films grow along the c - axis orientation. ZnO film exhibits a strong UV optical absorption near 388 nm. And the optical absorbance is close to zero,that indicates nearly 100% optical transparence. Photoluminescence （PL） spectrum shows only strong near - band - edge emissions with little or no deep - level emission related to defects. The full - width at half - maximum （FWHM） of the ultraviolet emission peak is 80meV. The results indicate that better crystal quality can be obtained.

Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Dynamics of excited OCS investigated by resonance-enhanced multiphoton ionization

The predissociation decay behavior of molecule carbonyl sulfide (OCS) has been investigated by resonance-enhanced multiphoton ionization spectroscopy using the pump-probe technique of dichroic femtosecond lasers in real time. The lifetime of excited OCS around 74 720 cm(-1) by two-photon absorption of 268 nm, corresponding to upsilon(1)=1 of the Rydberg state [(2)Pi(1/2)]4ppi((1)Sigma(+)), is directly determined to be tau(D)=1071+/-11 fs. This picosecond decay process indicates that the excited state is predissociative. The temporal information of dissociation enriches the knowledge of the potential-energy surface of the associative excited state.

Synthesis, structure and optical properties of new organic-inorganic haloplumbates complexes (C5H10N3)PbX4 (X = Br, Cl), (C2H2N4)PbBr3

Layered organic-inorganic composite materials (C5H10N3)PbX4 (X = Br 1, Cl 2) containing histaminium dications were grown via a solution-cooling process, and their structure and optical properties were determined. The organic ligand-histaminium introduced into the corner-sharing octahedra of the 'PbX4- layer' contains both primary ammonium and imidazolium different from the traditionally primary amine found in this system. As comparison, another analogous amine of 3-amino-1,2,4-triazol was used as ligand to coordinate with PbBr2 in acid solution. A novel complex (C2H2N4)PbBr3 (3) was obtained with zigzag PbBr2 chains different from the PbX4 layer in compound as 1 and 2. The hybrid (C5H10N3)PbX4 show exciton absorption at 339 nm for X = Cl and 419 nm for X = Br with the corresponding emission at 360 and 436 nm, respectively. The different PbBr2 chain structure of compound 3 does not show photo luminescence.

Preparation and luminescence properties of in situ formed lanthanide complexes covalently grafted to a silica network

Lanthanide-doped sol-gel-derived materials are an attractive type of luminescent materials that can be processed at ambient temperatures. However, the solubility of the lanthanide complexes in the matrix is a problem and it is difficult to obtain a uniform distribution of the complexes. Fortunately, these problems can be solved by covalently linking the lanthanide complex to the sol-gel-derived matrix. In this study, luminescent Eu3+ and Tb3+ bipyridine complexes were immobilized on sol-gel-derived silica. FT-IR, DTA-TG and luminescence spectra, as well as luminescence decay analysis, were used to characterize the obtained hybrid materials. The organic groups from the bipyridine-Si moiety were mostly destroyed between 220 and 600 degreesC. The luminescence properties of lanthanide bipyridine complexes anchored to the backbone of the silica network and the corresponding pure complexes were comparatively investigated, which indicates that the lanthanide bipyridine complex was formed during the hydrolysis and co-condensation of TEOS and modified bipyridine. Excitation at the ligand absorption wavelength (336 nm for the hybrid materials and 350 nm for the pure complexes) resulted in strong emission of the lanthanide ions: Eu3+ D-5(0)-F-7(J) (J = 0, 1, 2, 3, 4) and Tb3+ D-5(4)-F-7(J) (J = 6, 5, 4, 3) emission lines due to efficient energy transfer from the ligands to the lanthanide ions.

Luminescence properties of transparent hybrid thin film covalently linked with lanthanide complexes

Novel hybrid thin films covalently doped with Eu3+ (Tb3+) have been prepared via direct routes involving co-condensation of tetraethoxysilane and phen-Si in the presence of Eu3+ (Tb3+) by spin-casting and their luminescence properties have been investigated in detail. Lanthanide ions can be sensitized by anchored phenanthroline in hybrid thin films. Excitation at the ligand absorption wavelength (272 nm) resulted in the strong emission of the lanthanide ions i.e. Eu3+ D-5(0)-F-7(J) (J=0, 1, 2, 3, 4) emission lines and Tb3+ D-5(4)-F-7(J) (J = 6, 5, 4, 3) due to the energy transfer from the ligands to the lanthanide ions.

Phenanthroline-functionalized MCM-41 doped with europium ions

Organo-functionalized MCM-41 containing non-covalently linked 1,10-phenanthroline (denoted as Phen-MCM-41) was synthesized by template-directed co-condensation of tetraethoxysilane and the modified phenanthroline (denoted as Phen-Si). XRD, FTIR, UV/VIS spectroscopy as well as luminescence spectroscopy were employed to characterize Phen-MCM-41. No disintegration or loss of the Phen-Si during the solvent extraction procedure could be observed. When monitored by the ligand absorption wavelength (272 nm), the undoped MCM-41 produces a broad band emission centered at 450 run, whereas europium (III) doped Phen-MCM-41 displays the emission of the Eu3+, i.e., D-5(0) --> F-7(J) (J = 0, 1, 2, 3, 4) transition lines due to the energy transfer from the ligands to Eu3+ as well as a broad band emission centered at 442 nm.