TeO2对氟铝酸盐玻璃性质和结构的影响

以10MgF2—20CaF2—10SrF2—10BaF2—15YF3—35AlF3氟铝酸盐玻璃为基玻璃引入不同含量的TeO2得到了新的氟碲铝酸盐玻璃．用差热分析方法研究了TeO2对氟铝酸盐玻璃性能的影响，通过拉曼光谱和红外吸收谱来研究玻璃的结构变化．差热分析表明TeO2的增加使玻璃开始析晶温度瓦升高，融化温度％降低，成玻璃能力增加．玻璃结构分析表明氟碲铝酸盐玻璃的结构中存在[FnAl-O—AlFn]、[TeO3]、[TeO2F]和[TeOF2]等多面体，这些多面体由F^-和O^2-离子连接．这种新的氟碲铝

TeO2-ZnCl2-BaO-NaF玻璃系统的结构及中红外透过特性的研究

制备了一种新型的氧卤碲酸盐玻璃：（80-x）TeO2—15ZnCl2-xBaO-5NaF（x=30、20、10、0mol％），对玻璃的机械强度、热稳定性、拉曼光谱、紫外吸收光谱、红外透过光谱等特性进行了研究．通过拉曼光谱分析研究了玻璃组分含量的变化对玻璃结构和红外透过性能的影响．结果表明，随着BaO含量的增加，玻璃在红外波段透过率显著增加，并且红外透过截止波长向长波方向移动，本文对这一实验结果进行了机理性的研究探讨．同时，通过在熔制过程中通入高纯O2，以及引入适量的卤化物有效地除去玻璃中的[OH]基团，使

一种宽带拉曼放大碲酸盐玻璃的拉曼散射特性

The flattening and broadening effects of Ga2O3, GeO2, P2O5 in TeO2-BaCO3-SrCO3- Nb2O5 (TBSN) glass system were studied. The results showed that P2O5 can broaden the vibration band in Raman spectra and Ga2O3, GeO2 can flatten the spectra compared with TBSN glass. And also, they can extend the main vibration band and decrease the vibration intensity of 730 cm^-1 and 780 cm^-1 nonbridging oxygen connected with Te. They also make for the decrease of flatness in 600-870 cm^-1 vibration band and GeO2 has larger effect than Ga2O3 in weakening the vibration of nonbridging oxygen.

光子晶体光纤的研究新进展

综述了光子晶体光纤（PCF）不同于传统光纤的各种性质，并详细讨论了光子晶体光纤在通信和光纤激光等领域的新发展。

Investigation on nonradiative decay of the (Er3+I13/2)-I-4 -> I-4(15/2) transition in different tellurite glass matrix

Three kinds of Er3+-doped tellurite glasses with different hydroxyl groups are prepared by the conventional melt-quenching method. Infrared spectra are measured to estimate the exact content of OH- groups in samples. The maximum phonon energy in glasses are obtained by measuring the Raman scattering spectra. The strength parameters Omega(t) (t = 2, 4, 6) for all the samples are calculated and compared. The nonradiative decay rate of the Er3+ I-4(13/2) -> I-4(15/2) transition are calculated for the glass samples with different phonon energy and OH- group contents. Finally, the effect of OH- groups on fluorescence decay rate of Er3+ is analysed, the constant KOH-Er Of TWN, TZPL and TZL glasses are calculated to be 9.2 x 10(-19) cm(4)s(-1), 5.9 x 10(-19) cm(4)s(-1), and 3.5 x 10(-19) cm(4)s(-1), respectively.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Enhancement of ferromagnetic properties in In1.99Co0.01O3 by additional Cu doping

This paper reports room-temperature ferromagnetism in Co- and Cu-doped In2O3 samples synthesized by a solid-state reaction method. Structure and composition analyses revealed that Co and Cu were incorporated into the In2O3 lattices. Photoluminescence measurement revealed an additional emission at 520 urn from these doped samples. The magnetic measurement showed that additional Cu doping greatly enhanced the ferromagnetism of In1.99Co0.01O3 bulk samples. The implication of the effects of additional Cu doping is also discussed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on gamma-LiAlO2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.

Influences of CO2 laser irradiation on the structure and photoluminescence of zinc oxide thin films

CO2 laser irradiation experiments on ZnO thin films are reported. The structural, optical, luminescent and vibrational properties of the samples were investigated by X-ray diffraction (XRD), transmittance, photoluminescence (PL) and Raman measurements. XRD results show that the crystalline of the irradiated films was improved. The (002) peaks of irradiated ZnO films shift to. higher 20 angles due to the stress relaxation in the case of laser beam irradiation. From optical transmittance spectra, all films exhibit high transmittance in the visible range, the optical band edge of irradiated films showed a redshift compared with that of as-grown films. Compared with the as-grown films, the photoluminescence emission (in particular the relative intensities of visible emissions) intensities of irradiated samples enhanced. In the Raman scattering spectral both the A I. and E modes exhibited slight Raman blueshift. (c) 2005 Elsevier B.V. All rights reserved.

光系统Ⅱ核心天线复合物CP43和CP47的分离纯化及其光谱学特性的研究

应用改进DEAE-Toyopearl 650S阴离子交换柱层析从高等植物菠菜(Spinacia oleracea)中分离纯化了核心天线复合物CP43和CP47。并对它们的纯度和完整性色素种类和含量，以及色素分子的结合状态进行了研究并对色素分子间的能量传递机制进行了讨论。结果如下： 1、HPLC检测结果表明：纯化的CP43和CP47均只含Chla和β-Car两种色素分子，并且，平均每分子CP43多肽含19-20分子Chla和4-5分子β-Car;而平均每分CP47则含20-21分子Chla和3-4分子β-Car。 2、以436nm和480nm激发光激发样品得到的CP43和CP47的低温荧光发射光谱的最大荧光发射峰分别位于683nm和693nm。进一步发现，CP43和CP47，在相同条件下分别以436nm和480nm激发光激发样品得到的低温荧光发射光谱经归一化后几乎完全重叠，而且400-500nm波长范围内的激发光扫描得到的三维低温荧光发射光谱沿激发轴具有较好的对应关系，表明纯化的CP43和CP47都具有较高的完整性。 3、纯化的CP43和CP47的吸收光谱的红区最大吸收峰分别位于671nm和674nm。该光区的导数光谱均分辨出偏蓝区和偏红区两个子峰，CP43的这两个子峰分别位于669nm和682nm;而CP47的两个子峰则分别位于669nm和680nm。进一步用包含这两个子峰的高斯解析参数对红区最大吸收峰进行拟合，结果证明，拟合的曲线与实测曲线几乎完全吻合，这表明，CP43和CP47均至少包含两种不同状态的Chla分子。 3．1应用不同的变性温度处理CP43，发现随变性温度的不断提高，其红区最大吸收峰的峰值逐渐减小，四阶导数光谱分辨出的两个子峰同时减小，但差光谱显示：随处理温度的不断提高，这两个组分峰值的变化并不同步进行，较低温度范围内(55℃以下)682nm吸收峰下降明显，而较高温度范围内(55℃以上)，669nm吸收峰下降明显。 同时，随处理温度不断提高CP43脱辅基蛋白的结构也在不断发生变化，其变化过程明显表现出两个跃变阶段。这两个跃变阶段分别出现在40～50℃范围内和55～60℃范围内，恰与吸收光谱两个组分峰变化的转变过程相一致。这证明，CP43中分别位于669nm和682nm的不同的色谱组分即代表两种不同结合态的Chla分子，分别简称为“CP43-669”和“CP43-682”。它们在色素蛋白复合物中所处的环境不同，因而对蛋白质结构的依赖性不同，前者更高地依赖于蛋白复合物的整体构象，而后者则主要依赖于蛋白质的二级结构。 3.2 经不同的变性温度处理的CP47，其红区最大吸收峰的峰位逐渐蓝移，而吸收峰值无明显的变化，只有当处理温度提高到65℃以后，蓝移后的吸收峰值(669nm)才开始明显减小;四阶导数光谱表现为680nm吸收峰的信号逐渐下降669nm的吸收信号逐渐明显;处理减对照差光谱只观察到680nm吸收值的逐渐减少，而几乎观察不到669nm吸收值的变化。同时，随变性温度的不断提高，CP47的脱辅基蛋白的结构也发生相应的变化与CP43不同，蛋白结构变化最大的温度范围为60℃～65℃之间，但同CP47的峰位蓝移、导数光谱中680nm信号的减小，以及差光谱中680nm吸收值的减小相一致。由此认为，同CP43一样，CP47的吸收光谱中分辨出的分别位于669nm和680nm处的两个不同光谱组分亦分别代表两种不同结合状态的Chla分子，分别简称为“CP47-669”和“CP47-680”，与CP43中的相应组分对应，它们处于不同的蛋白环境中，从而对蛋白质结构变化的依赖性不同。 3.3 CP43和CP47的CD光谱表现出明显的正负双峰，表明色素分子间存在较强的激子相互作用。随变性温度的不断提高，正负CD双峰的信号逐渐减弱，变化过程与脱辅基蛋白结构的变化以及CP43-682的变化相一致，表明色素分子间的激子相互作用更高依赖于CP43-682和CP47-680。并认为CP43-682和CP47-680可能以二聚体或多聚体的形式存在，并且二聚体或多聚体的形成依赖于蛋白天然构象。而CP43-669和CP47-669则以单体的形式位于蛋白结构中相对伸展的区域。并提出：在CP43-682以CP47-680分子之间，激发能主要以激子偶合机制进行而在CP43-669，CP47-669分子间及CP43-669至CP43-682间，CP47-669至CP47-680之间激发能则主要以Foster机制进行。 4、以488nm激发光得到的CP43和CP47的共振拉曼光谱都具有全反式构型类胡萝卜素分子的四个典型特征峰由此认为CP43和CP47中的β-Car分子亦具有全反式构型;与溶于丙酮抽体物中的β-Car分子相比较，CP43和CP47中的β-Car分子的共振拉曼光谱中具有较强的960cm~(-1)的拉曼峰，表明，CP43和CP47中的β-Car分子具有扭曲的构象。 应用经归一化后的吸收光谱与荧光激发光谱相比较的办法发现CP43和CP47中存在β-Car分子和Chla分子间的能量传递其能量传递效率分别为29.8～29.9%和52.3～56.9%。这表明，在正常条件下，CP47中β-Car分子和Chla分子间的能量传递效率远大于CP43。此外，当选用蛋白结构变化最明显的热变性温度处理样品后，发现，不论CP43还是CP47中β-Car与Chla分子间的能量传递效率大大降低，表明，这两种色素分子间的能量传递严格依赖于蛋白复合物的天然构象，并认为，正常条件下，CP43和CP47内β-Car与Chla分子间的空间距离较近，可能不大于10A，CP43和CP47相比较，CP47内这两种色素分子间的距离更近。并进一步提出，在CP43和CP47中，β-Car到Chla分子间的能量传递最大可能以Dexter的电子交换机制进行。

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

A 5.35-mu m-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) omega-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction theta - 2. scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.

Structural properties of ne implanted GaN

We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10(14) cm(-2) was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm(-1) for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.