一种面向基于属性存取的文件系统的设计与实现

基于属性的存取，对于在包含不同来源的大量文件的系统中进行有效的信息管理来说，是一种非常具有吸引力的特性。然而尽管在相当长的一段时间内其价值已广为人知，该特性的真正有实用价值的实现仍然非常之少。本文探讨了实现该特性时面临的主要挑战，以及它们是怎样在一种专为此目的设计的文件系统中，通过成功的应用各种原则而被妥善处理。

COHERENT MODEL FOR RESONANT-TUNNELING OF ELECTRONS IN DOUBLE-QUANTUM WELLS UNDER ELECTRIC-FIELDS

Taking the inhomogenous broadening of the electron energy levels into account, a coherent model of the resonant tunneling (RT) of electrons in double quantum wells is presented. The validity of the model is confirmed with the experiments [M. Nido et al., Proc. SPIE 1268, 177 (1990)], and shows that the tunneling process can be explained by the simple coherent theory even in the presence of the carrier scattering. We have discussed the dependence of resonant tunneling on the barrier thickness L(B) by introducing the contrast ratio LAMBDA and the full width at half depth of the RT valley, and found that LAMBDA first increases with increasing barrier thickness, reaches a maximum, and then decreases with a further increase of L(B), in striking contrast to the Fabry-Perot model where a monotonic increase of the peak-to-valley ratio is predicted. We attribute the reduction of LAMBDA with large L(B) to the energy broadening resulting from the carrier scattering. A monotonic decrease of the full width at half depth of the RT valley with an increase of L(R) is also found.

LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

Donor acceptor pair in molecular beam epitaxy grown GaN

We have recently found evidence of new donor acceptor pair (DAP) luminescence in molecular beam epitaxy (MBE) grown films. A variety of nominally undoped samples have been studied by photoluminescence (PL) over a temperature range of 5-300 K. The samples show intensive luminescence al energies of 3.404-3.413 eV varying with different sample at 5 K, as well as a fairly strong (DX)-X-0 line at low temperature. We attribute the Line at 3.404-3.413 eV to DAP recombination which is over 0.1 eV different from the well known DAP caused by ME-doping in GaN. The DAP line shows fine structure. it even predominates in one particular sample. The peak position shifts to higher energy with temperature increasing from 5 up to 70 K, and as the excitation laser intensity increases. The data are consistent with DAP luminescence involving an acceptor level of about 90 meV (presumably carbon) above the valence band edge in GaN. It is much shallower than the acceptor level of 250 meV produced by the p-type dopant Mg which is commonly used at present. (C) 1997 Elsevier Science S.A.

INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1-xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.

Optical study of localized and delocalized states in GaAsN/GaAs

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

黄土高原半干旱地区的农业发展与高效用水

黄土高原的大部分处于半干旱地带,属于生态环境脆弱地区,改善黄土高原地区的生态环境和提高生产力不仅是黄土高原地区内部的问题,而且是西部大开发的重要组成部分.本文在总结和对比分析国内外半干旱地区农业发展过程中的成功经验与关键措施的基础上,提出该地区的农业发展战略应该以实现水土资源高效利用和开发基因资源的潜力为目标.同时,针对黄土高原半干旱地区的农业水环境,论述了作物对有限水高效利用的原理,并对该地区农业可持续发展的技术对策提出了建议.

ARC/INFOR~接受Surfer图文数据的实现

数据是地理信息系统 (GIS)应用的核心。现实世界的数据具有普遍的多样性 ,关于 GIS接受不同数据的研究已成为当前 GIS研究中的一个难点和热点。本文根据通用 GIS工具软件 ARC/INFO接受外部空间数据的方式和图形分析软件 Surfer的数据格式特征 ,运用特定的处理方法实现了由 Surfer格式数据向 ARC/ INFO矢量格式数据 (Coverage)的转换 ,使 ARC/ INFO接受外部数据格式的范围拓宽 ,数据处理能力增强。

Chemical bond characteristics, thermal expansion property and compressibility of AR(2)O(4) (A = Ca, Sr, Ba; R = rare earths)

Theoretical researches were performed on the CaFe2O4-type binary rare earth oxides AR(2)O(4) (A = Ca, Sr, Ba; R = rare earths) by using chemical bond theory of dielectric description. The chemical bond properties of these crystals were explored, and then the thermal expansion property and compressibility were studied. The theoretical values of linear thermal expansion coefficient (LTEC) and bulk modulus were presented. The calculations revealed that the LTECs and the bulk moduli do have linear relationship with the ionic radii of the rare earths. In the cases of Sc and Y, both the LTEC and bulk modulus values are larger than the lanthanide series. We attribute this to the difference in the electronic configuration between Sc (Y) and lanthanide series. For SrY2O4 and BaY2O4 crystals, the theoretical values of LTEC and bulk modulus agree well with experimental ones.

Achieving highly efficient white organic light-emitting diodes with reduced efficiency roll-off

A highly efficient and colour-stable three-wavelength white organic light-emitting diode with the structure of indium tin oxide (ITO)/MoO3/N,N'-diphenyl-N,N'-bis (1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/4,4'-N,N'-dicarbazole-biphenyl (CBP): bis(2,4-diphenylquinolyl-N,C-2') iridium( acetylacetonate) (PPQ)(2)Ir(acac)/NPB/p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-Ph):2-methyl-9,10-di(2-naphthyl) anthracene (MADN)/tris (8-hydroxyquinoline) aluminum (AlQ): 10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/AlQ/LiF/Al is fabricated and characterized. A current efficiency of 12.3 cdA(-1) at an illumination-relevant brightness of 1000 cd m(-2) is obtained, which rolls off slightly to 10.3 cdA(-1) at a rather high brightness of 10 000 cd m(-2). We attribute this great reduction in the efficiency roll-off to the wise management of singlet and triplet excitons between emissive layers as well as the superior charge injection and diffusion balance in the device.

Influence of temperature on lattice spacings of melt-crystallized poly(iminosebacoyl iminodecamethylene)

The variation of lattice spacings of poly(iminosebacoyl iminodecamethylene) (nylon-10,10) with temperature was studied by wide-angle X-ray diffraction (WAXD) during both heating and cooling processes, which demonstrates a gradual and continuous transition with temperature. However, the crystal melts before the two peaks merge completely. Both WAXD and differential scanning calorimetry show that crystallization from molten sample results directly in the triclinic form. Additionally, this transition is thermodynamically reversible. Comparison of this transition with that of nylon-6,6, suggests that no hydrogen-bonded network is formed during or after the transition. We prefer to attribute this transition to asymmetrical thermal expansion in the nylon-10,10 crystals rather than to a true first-order phase transition. (C) 2001 Society of Chemical Industry.

Effects of the morphologies and structures of light-emitting layers on the performance of organic electroluminescent devices

Organic electroluminescent devices with a structure of ITO/ploy (9-vinylcarbazole)/tris (8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag are fabricated at different substrate temperatures (77, 298, and 438 K) during Alq3 deposition. It is found that the surface morphologies of Alq3 thin films greatly affect the I-V characteristics of the devices by the contact area between metal cathode and light-emitting layer. There is an increase in the luminous efficiency of the devices in the order 77 K < 298 K < 438 K. We attribute this trend to different structures of Alq3 thin films. (C) 2001 American Institute of Physics.

Two dimensional nuclear magnetic resonance analysis of ruthenium-(4,4'-dimethyl-2,2'-bipyridine)(2) (2,2'-bipyridine-4,4'-dicarboxylic acid) (PF6)(2)

The (1) H and C-13 NMR spectra are reported for Ru(4, 4'-dimethyl-2,2'-bipyridene)(2) (2,2'-bipyridine-4,4'-dicarboxylic acid) (PF6)(2) that can be used as a new electrochemiluminescent probe in immunoasssay and nucleic acid hybridization assay. Because of the effect ol:Ru atom ligands and complex steric configuration, it is difficult to attribute spectra of the title molecular, By using 2D (1) H-(1) H COSY and (1) H-C-13 HETCOR method, the proton and C-13 NMR spectra are assigned completely, which provides a satisfactory method to quantitative and qualitative, analysis of the title moleculer in the further study.

Analysis of 2D-nuclear magnetic resonance for Ru(2,2 '-bipyridine)(2)(4,4 '-dimethyl-2,2 '-bipyridine) (PF6)(2)

The H-1 and C-13 NMR spectra are reported for Ru(2,2'-bipyridine)(2)(4,4'-dimethyl-2,2'-bipyridine)(PF6)(2) that may be used as elechochemiluminescent species. Because of the effect of Ru atom on ligands and complex steric configuration, it is, difficult to attribute the spectra of the title molecular. By using 2D H-1-H-1 COSY and H-1-C-13 COSY methods, the proton and carbon-13 spectra are assigned completely. This also provides a basis for NMR characterization of the-similar new compounds.