GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

Among all magnetic semiconductors, GaMnAs seems to be the most important one. In this work, we present accurate first-principles calculations of GaMnAs within the GGA-1/2 approach: We concentrate our efforts in obtaining the position of the peak of Mn-d levels in the valence band and also the majority spin band gap. For the position of the Mn-d peak, we find a value of 3.3 eV below the Fermi level, in good agreement with the most recent experimental results of 3.5 and 3.7 eV. An analytical expression that fits the calculated E-g(x) for majority spin is derived in order to provide ready access to the band gap for the composition range from 0 to 0.25. We found a value of 3.9 eV for the gap bowing parameter. The results agree well with the most recent experimental data. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718602]

Temperature Sensing Using Colloidal-Core Photonic Crystal Fiber

We report on a temperature sensor based on the monitoring of the luminescence spectrum of CdSe/ZnS nanocrystals, dispersed in mineral oil and inserted into the core of a photonic crystal fiber. The high overlap between the pump light and the nanocrystals as well as the luminescence guiding provided by the fiber geometry resulted in relatively high luminescence powers and improved optical signal-to-noise ratio (OSNR). Also, both core end interfaces were sealed so as to generate a more stable and robust waveguide structure. Temperature sensitivity experiments indicated a 70 pm/degrees C spectral shift over the 5 degrees C to 90 degrees C range.

Digital magnetic heterostructures based on GaN using GGA-1/2 approach

We present ab-initio calculations of seven digital magnetic heterostructures, GaN delta-doped with V, Cr, Mn, Fe, Co, Ni, and Cu, forming two-dimensional systems. Only GaN delta-doped with V or Cr present a ferromagnetic ground state with high Curie temperatures. For both, to better describe the electronic properties, we used the GGA-1/2 approach. The ground state of GaN/Cr resulted in a two dimensional half-metal, with 100% spin polarization. For GaN/V, we obtained an insulating state: integer magnetic moment of 2.0 mu(B), a minority spin gap of 3.0 eV close to the gap of GaN, but a majority spin gap of 0.34 eV. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751285]

Poli (metil azoteto de glicidila) - GAP. I: síntese e caracterização

O poli (metil azoteto de glicidila) - GAP - é um material energético que pode ser utilizado como aglutinante (binder) e como plastificante energético em compostos explosivos e propulsores de foguetes. Neste trabalho, foi abordada a síntese do (GAP) através da conversão direta da epicloridrina (ECH) a GAP. Os reagentes utilizados foram azida de sódio, epicloridrina e vários álcoois extensores de cadeias, o etanodiol, o 1,4-butanodiol, o dietilenoglicol e o glicerol. Alguns parâmetros de operação foram avaliados, como o tempo de reação, a proporção entre os reagentes, dois tipos de solvente e a ordem de adição dos reagentes. A variável observada para a análise foi a massa molecular do GAP. Todos os materiais sintetizados também foram caracterizados por análises de FTIR, UV, RMN, DSC, análise elementar e TGA. Uma maior massa molecular, maior rendimento e uma melhor conversão do grupo azida a GAP foram obtidos com a adição de epicloridrina sobre a azida de sódio e usando DMF como solvente.

Poli (metil azoteto de glicidila) - GAP. II: mecanismo de reação

O poli (metil azoteto de glicidila) - GAP - é um material energético que pode ser utilizado como aglutinante (binder) e como plastificante energético em compostos explosivos e propulsores de foguetes. O GAP de baixo peso molecular pode ser obtido pela conversão direta da epicloridrina (ECH) a GAP. Neste trabalho, é proposto um possível mecanismo para esta conversão direta, fundamentado em análises de infravermelho de espécies intermediárias.

Narrowing the gap of personalized medicine in emerging countries: the case of multiple endocrine neoplasias in Brazil

The finished version of the human genome sequence was completed in 2003, and this event initiated a revolution in medical practice, which is usually referred to as the age of genomic or personalized medicine. Genomic medicine aims to be predictive, personalized, preventive, and also participative (4Ps). It offers a new approach to several pathological conditions, although its impact so far has been more evident in mendelian diseases. This article briefly reviews the potential advantages of this approach, and also some issues that may arise in the attempt to apply the accumulated knowledge from genomic medicine to clinical practice in emerging countries. The advantages of applying genomic medicine into clinical practice are obvious, enabling prediction, prevention, and early diagnosis and treatment of several genetic disorders. However, there are also some issues, such as those related to: (a) the need for approval of a law equivalent to the Genetic Information Nondiscrimination Act, which was approved in 2008 in the USA; (b) the need for private and public funding for genetics and genomics; (c) the need for development of innovative healthcare systems that may substantially cut costs (e.g. costs of periodic medical followup); (d) the need for new graduate and postgraduate curricula in which genomic medicine is emphasized; and (e) the need to adequately inform the population and possible consumers of genetic testing, with reference to the basic aspects of genomic medicine.

First principles calculations for vacancies and antisites in PbSe and PbTe: bulk and nanowire.

The energetic stability and the electronic properties of vacancies (VX) and antisites (XY) in PbSe and PbTe are investigated. PbSe and PbTe are narrow band gap semiconductors and have the potential to be used in infrared detectors, laser, and diodes. They are also of special interest for thermoelectric devices (TE). The calculations are based in the Density Functional Theory (DFT) and the General Gradient Approximation (GGA) for the exchange-correlation term, as implemented in the VASP code. The core and valence electrons are described by the Projected Augmented Wave (PAW) and the Plane Wave (PW) methods, respectively. The defects are studied in the bulk and nanowire (NW) system. Our results show that intrinsec defects (vacancies and antisites) in PbTe have lower formation energies in the NW as compared to the bulk and present a trend in migrate to the surface of the NW. For the PbSe we obtain similar results when compare the formation energy for the bulk and NW. However, the Pb vacancy and the antisites are more stable in the core of the NW. The intrinsec defects are shallow defects for the bulk system. For both PbSe and PbTe VPb is a shallow acceptor defect and VSe and VT e are shallow donor defects for the PbSe and PbTe, respectively. Similar electronic properties are observed for the antisites. For the Pb in the anion site we obtain an n-type semiconductor for both PbSe and PbTe, SeP b is a p-type for the PbSe, and T eP b is a n-type for PbTe. Due the quantum con¯nement effects present in the NW (the band gap open), these defects have different electronic properties for the NW as compared to the bulk. Now these defects give rise to electronic levels in the band gap of the PbTe NW and the VT e present a metallic character. For the PbSe NW a p-type and a n-type semiconductor is obtained for the VP b and P bSe, respectively. On the other hand, deep electronic levels are present in the band gap for the VSe and SePb. These results show that due an enhanced in the electronic density of states (DOS) near the Fermi energy, the defective PbSe and PbTe are candidates for efficient TE devices.

Femtosecond laser processing of glassy and polymeric matrices containing metals and semiconductor nanostructures

Tailoring properties of materials by femtosecond laser processing has been proposed in the last decade as a powerful approach for technological applications, ranging from optics to biology. Although most of the research output in this field is related to femtosecond laser processing of single either organic or inorganic materials, more recently a similar approach has been proposed to develop advanced hybrid nanomaterials. Here, we report results on the use of femtosecond lasers to process hybrid nanomaterials, composed of polymeric and glassy matrices containing metal or semiconductor nanostructures. We present results on the use of femtosecond pulses to induce Cu and Ag nanoparticles in the bulk of borate and borosilicate glasses, which can be applied for a new generation of waveguides. We also report on 3D polymeric structures, fabricated by two-photon polymerization, containing Au and ZnO nanostructures, with intense two-photon fluorescent properties. The approach based on femtosecond laser processing to fabricate hybrid materials containing metal or semiconductor nanostructures is promising to be exploited for optical sensors and photonics devices.

The gender wage gap in developing and transition countries

The aim of my dissertation is to study the gender wage gap with a specific focus on developing and transition countries. In the first chapter I present the main existing theories proposed to analyse the gender wage gap and I review the empirical literature on the gender wage gap in developing and transition countries and its main findings. Then, I discuss the overall empirical issues related to the estimation of the gender wage gap and the issues specific to developing and transition countries. The second chapter is an empirical analysis of the gender wage gap in a developing countries, the Union of Comoros, using data from the multidimensional household budget survey “Enquete integrale auprès des ménages” (EIM) run in 2004. The interest of my work is to provide a benchmark analysis for further studies on the situation of women in the Comorian labour market and to contribute to the literature on gender wage gap in Africa by making available more information on the dynamics and mechanism of the gender wage gap, given the limited interest on the topic in this area of the world. The third chapter is an applied analysis of the gender wage gap in a transition country, Poland, using data from the Labour Force Survey (LSF) collected for the years 1994 and 2004. I provide a detailed examination of how gender earning differentials have changed over the period starting from 1994 to a more advanced transition phase in 2004, when market elements have become much more important in the functioning of the Polish economy than in the earlier phase. The main contribution of my dissertation is the application of the econometrical methodology that I describe in the beginning of the second chapter. First, I run a preliminary OLS and quantile regression analysis to estimate and describe the raw and conditional wage gaps along the distribution. Second, I estimate quantile regressions separately for males and females, in order to allow for different rewards to characteristics. Third, I proceed to decompose the raw wage gap estimated at the mean through the Oaxaca-Blinder (1973) procedure. In the second chapter I run a two-steps Heckman procedure by estimating a model of participation in the labour market which shows a significant selection bias for females. Forth, I apply the Machado-Mata (2005) techniques to extend the decomposition analysis at all points of the distribution. In Poland I can also implement the Juhn, Murphy and Pierce (1991) decomposition over the period 1994-2004, to account for effects to the pay gap due to changes in overall wage dispersion beyond Oaxaca’s standard decomposition.

TCAD approaches to multidimensional simulation of advanced semiconductor devices

Technology scaling increasingly emphasizes complexity and non-ideality of the electrical behavior of semiconductor devices and boosts interest on alternatives to the conventional planar MOSFET architecture. TCAD simulation tools are fundamental to the analysis and development of new technology generations. However, the increasing device complexity is reflected in an augmented dimensionality of the problems to be solved. The trade-off between accuracy and computational cost of the simulation is especially influenced by domain discretization: mesh generation is therefore one of the most critical steps and automatic approaches are sought. Moreover, the problem size is further increased by process variations, calling for a statistical representation of the single device through an ensemble of microscopically different instances. The aim of this thesis is to present multi-disciplinary approaches to handle this increasing problem dimensionality in a numerical simulation perspective. The topic of mesh generation is tackled by presenting a new Wavelet-based Adaptive Method (WAM) for the automatic refinement of 2D and 3D domain discretizations. Multiresolution techniques and efficient signal processing algorithms are exploited to increase grid resolution in the domain regions where relevant physical phenomena take place. Moreover, the grid is dynamically adapted to follow solution changes produced by bias variations and quality criteria are imposed on the produced meshes. The further dimensionality increase due to variability in extremely scaled devices is considered with reference to two increasingly critical phenomena, namely line-edge roughness (LER) and random dopant fluctuations (RD). The impact of such phenomena on FinFET devices, which represent a promising alternative to planar CMOS technology, is estimated through 2D and 3D TCAD simulations and statistical tools, taking into account matching performance of single devices as well as basic circuit blocks such as SRAMs. Several process options are compared, including resist- and spacer-defined fin patterning as well as different doping profile definitions. Combining statistical simulations with experimental data, potentialities and shortcomings of the FinFET architecture are analyzed and useful design guidelines are provided, which boost feasibility of this technology for mainstream applications in sub-45 nm generation integrated circuits.

Untersuchungen von intrazellulären Signalwegen bei neuraler Determinierung und Differenzierung in vitro: Einfluß von GAP-43 und Bcl-2

Die PCC7-Mz1-Zellinie stellt ein geeignetes Modell dar, um frühe neurale Determinierungs- und Differenzierungsprozesse unter kontrollierten Bedingungen in vitro zu untersuchen. Aus pluripotenten Stammzellen entwickelt sich nach Behandlung mit dem Morphogen Retinsäure (RA) ein stabiles Muster aus Neuronen, Fibroblasten und Astroglia-Zellen. Parallel stirbt ein reproduzierbarer Anteil der Kultur apoptotisch. Zur näheren Aufklärung der molekularen Vorgänge während der neuralen Entwicklung wurde der Einfluß von zwei Schlüsselmolekülen - dem Proteinkinase C Substrat (PKC) GAP-43 sowie dem antiapoptotischen Bcl-2 Protein - auf die neurale Differenzierung und die damit assoziierten Apoptoseereignisse der PCC7-Mz1-Zellen untersucht. Dazu wurden stabile Zellinien, die eine Überexpression von GAP-43 bzw. von Bcl-2 aufwiesen, hergestellt. GAP-43In PCC7-Mz1-Zellen wurde die Expression von GAP-43 sowohl auf mRNA- als auch auf Protein-Ebene innerhalb von 24 Stunden nach Zugabe von RA hochreguliert. GAP-43 war bereits in noch proliferierenden neuronalen Vorläuferzellen als Substrat für PKC und als Interaktionspartner von Calmodulin funktionell. Die Überexpression von GAP-43 in PCC7-Mz1-Zellen förderte die Ausprägung des neuronalen Phänotyps. Das Differenzierungspotential der Mz-GAP-43 Klone war eingeschränkt, da sich nach Induktion mit RA aus den Stammzellen nur noch Neurone, aber keine Fibroblasten und Astroglia-Zellen mehr entwickelten. Die Determinierung für das neuronale Entwicklungsschicksal war in den Mz-GAP-43 Klonen stärker fortgeschritten als in MzN-Klonen, die durch Subklonierung aus PCC7-Mz1-Zellen generiert wurden, da die GAP-43 überexprimierenden Zellen durch Wachstum auf Laminin nicht in den pluripotenten Phänotyp revertiert werden konnten. Aufgrund der Interaktion zwischen GAP-43 und Calmodulin in Stammzellen der Mz-GAP-43 Klone kann man vermuten, daß die neuronalen Determinierungsprozesse über Ca2+/Calmodulin-abhängige Signalwege verlaufen. Da das Gen für den Transkriptionsfaktor NCNF (

In Between : The Gap of quality L'influenza dell'insegnamento di Gurdjieff nel teatro di Peter Brook, Decalan Donnellan e Robert Lepage

Il Lavoro é incentrato sull' influenza dell'insegnamento di G. I Gurdjieff sul teatro del novecento in particolare sul lavoro di Peter Brook, Declan Donnellan e Robert Lepage

Plasmonenresonanzen von sichelförmigen metallischen Nanoobjekten

Metallische Objekte in der Größenordnung der optischen Wellenlänge zeigen Resonanzen im optischen Spektralbereich. Mit einer Kombination aus Kolloidlithographie, Metallfilmbedampfung und reaktivem Ionenstrahl¨atzen wurden Nanosicheln aus Gold bzw. Silber mit identischer Form und Orientierung in Sichelform mit einer Größe von 60nm bis 400nm hergestellt. Der Öffnungswinkel der Nanosicheln lässt sich kontinuierlich einstellen. Durch die einheitliche Orientierung lassen sich Messungen am Ensemble direkt auf das Verhalten des Einzelobjektes übertragen, wie ein Vergleich der Extinktionsspektren einer Ensemblemessung am UV/Vis/NIR-Spektrometer mit einer Einzelpartikelmessung in einem konfokalen Mikroskop zeigt. Die optische Antwort der Nanosicheln wurde als zwei-dimensionales Modell mit einer Finite Elemente Methode berechnet. Das Ergebnis sind mehrere polarisationsabhängige Resonanzen im optischen Spektrum. Diese lassen sich durch Variation des Öffnungswinkels und der Gr¨oße der Nanosichel verschieben. Durch Beleuchten lassen sich plasmonische Schwingungen anregen, die ein stark lokalisiertes Nahfeld an den Spitzen und in der Öffnung der Nanosicheln erzeugen. Das Nahfeld der Partikelresonanz wurde mit einer Fotolackmethode nachgewiesen. Die Untersuchungen am UV/Vis/NIR-Spektrometer zeigen mehrere polarisationsabhängige Resonanzen im Spektralbereich von 300 nm bis 3200 nm. Die Resonanzen der Nanosicheln lassen sich durch den Öffnungswinkel und den Durchmesser in der Größenordnung der Halbwertbreite im optischen Spektrum verschieben. In der Anwendung als Chemo- bzw. Biosensor zeigen Gold-Nanosicheln eine ähnliche Empfindlichkeit wie vergleichbare Sensoren auf der Basis von dünnen Metallstrukturen. Das Nahfeld zeichnet sich durch eine starke Lokalisierung aus und dringt, je nach Multipolordnung, zwischen 14 nm und 70 nm in die Umgebung ein. Quantenpunkte wurden an das Nahfeld der Nanosicheln gekoppelt. Die Emission der Quantenpunkte bei einer Wellenlänge von 860nm wird durch die Resonanz der Nanosicheln verstärkt. Die Nanosicheln wurden als optische Pinzette eingesetzt. Bei einer Anregung mit einem Laser bei einer Wellenlänge von 1064 nm wurden Polystyrolkolloide mit einem Durchmesser von 40 nm von den resonanten Nanosicheln eingefangen. Die Nanosicheln zeigen außergewöhnliche optische Eigenschaften, die mithilfe der Geometrieparameter über einen großen Bereich verändert werden können. Die ersten Anwendungen haben Anknüpfungspunkte zur Verwendung in der Sensorik, Fluoreszenzspektroskopie und als optische Pinzette aufgezeigt.

Mixed finite-element methods for elliptic convection-dominated problems arising in semiconductor physics

In this work we develop and analyze an adaptive numerical scheme for simulating a class of macroscopic semiconductor models. At first the numerical modelling of semiconductors is reviewed in order to classify the Energy-Transport models for semiconductors that are later simulated in 2D. In this class of models the flow of charged particles, that are negatively charged electrons and so-called holes, which are quasi-particles of positive charge, as well as their energy distributions are described by a coupled system of nonlinear partial differential equations. A considerable difficulty in simulating these convection-dominated equations is posed by the nonlinear coupling as well as due to the fact that the local phenomena such as "hot electron effects" are only partially assessable through the given data. The primary variables that are used in the simulations are the particle density and the particle energy density. The user of these simulations is mostly interested in the current flow through parts of the domain boundary - the contacts. The numerical method considered here utilizes mixed finite-elements as trial functions for the discrete solution. The continuous discretization of the normal fluxes is the most important property of this discretization from the users perspective. It will be proven that under certain assumptions on the triangulation the particle density remains positive in the iterative solution algorithm. Connected to this result an a priori error estimate for the discrete solution of linear convection-diffusion equations is derived. The local charge transport phenomena will be resolved by an adaptive algorithm, which is based on a posteriori error estimators. At that stage a comparison of different estimations is performed. Additionally a method to effectively estimate the error in local quantities derived from the solution, so-called "functional outputs", is developed by transferring the dual weighted residual method to mixed finite elements. For a model problem we present how this method can deliver promising results even when standard error estimator fail completely to reduce the error in an iterative mesh refinement process.