Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

Clay ratio as a tracer to assess the origin of soil-derived dust

IEECAS SKLLQG

Exploring the Origin of Power Law Distribution in Single-Molecule Conformation Dynamics: Energy Landscape Perspectives

We explored the origin of power law distribution observed in single-molecule conformational dynamics experiments. By establishing a kinetic master equation approach to study statistically the microscopic state dynamics, we show that the underlying landscape with exponentially distributed density of states leads to power law distribution of kinetics. The exponential density of states emerges when the system becomes glassy and landscape becomes rough with significant trapping.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency.

Study on the origin of inverted phase in drying solution-cast block copolymer films

In a previous study, we reported observation of the novel inverted phase (the minority blocks comprising the continuum phase) in kinetically controlled phase separating solution-cast poly(styrene-b-butadiene-b-styrene) (SBS) triblock copolymer films [Zhang et al. Macromolecules 2000, 33, 9561-7]. In this study, we adopt the same approach to investigate the formation of inverted phase in a series of solution-cast poly(styrene-b-butadiene) (SB) asymmetric diblock copolymers having nearly equal polystyrene (PS) weight fraction (about 30 wt %) but different molecular weights. The microstructure of the solution-cast block copolymer films resulting from different solvent evaporation rates, R, was inspected, from which the kinetically frozen-in phase structures at qualitatively different block copolymer concentrations and correspondingly different effective interaction parameter, chieff, can be deduced. Our result shows that there is a threshold molecular weight or range of molecular weight below which the unusual inverted phase is accessible by controlling the solvent evaporation rate. In comparing the present result with that of our previous study on the SBS triblock copolymer, we find that the formation of the inverted phase has little bearing on the chain architecture. We performed numerical calculations for the free energy of block copolymer cylinders and found that the normal phase is always preferred irrespective of the interaction parameter and molecular weight, which suggests the formation of the inverted phase to have a kinetic origin.

The origin of nonlinearities in K[B5O6(OH)(4)]center dot 2H(2)O crystal

In this paper the origin of nonlinearities of the K[B5O6(OH)(4)].2H(2)O(KB5) crystal has been investigated from a comprehensive view-point by using the bond-valence theory of complex crystals. The results of the calculation (d(31) = -1.18 X 10(-10) esu, d(32) = 0.20 X 10(-10) and d(33) = -1.03 X 10(-9) esu) are in good agreement with experimental data. For the first time we pointed out that its nonlinearities come from the H(2)-O(2) bonds and the [B5O6(OH)(4)](-) group, and estimated its larger nonlinear optical (NLO) coefficient d(33).