Free space communications with beam steering a two-electrode tapered laser diode using liquid-crystal slm

A free space optical wireless communication system with 3 degree angular coverage and 1.25 GHz modulation bandwidth is reported, in which relatively narrow laser beam of a simultaneous high power, high modulation speed and ultra high modulation efficiency directly modulated two-electrode tapered laser diode is steered using a nematic phase-only Liquid-Crystal On Silicon Spatial Light Modulator (LCOS SLM) by displaying reconfigurable 256 phase level gratings. © 1983-2012 IEEE.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror

A high-power continuous wave (cw) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41 %. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers. (C) 2006 Elsevier Ltd. All rights reserved.

Superfocusing of high-M2 semiconductor laser beams:experimental demonstration

The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the 'quality' of laser beams is characterized by so-called 'beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the 'ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of 'superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on 'self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an 'ideal' lens of unity numerical aperture. © 2014 SPIE.

Two-surface wave decay : controlling power transfer in plasma-surface interactions

Controlled interaction of high-power pulsed electromagnetic radiation with plasma-exposed solid surfaces is a major challenge in applications spanning from electron beam accelerators in microwave electronics to pulsed laser ablation-assisted synthesis of nanomaterials. It is shown that the efficiency of such interaction can be potentially improved via an additional channel of wave power dissipation due to nonlinear excitation of two counterpropagating surface waves, resonant excitations of the plasma-solid system.Physics.

Feasibility of laser-induced breakdown spectroscopy for the study of the temporal distribution of trace elements trapped in snow collected from greater himalayan range

The potential merit of laser-induced breakdown spectroscopy (LIBS) has been demonstrated for detection and quantification of trace pollutants trapped in snow/ice samples. In this technique, a high-power pulsed laser beam from Nd:YAG Laser (Model no. Surelite III-10, Continuum, Santa Clara, CA, USA) is focused on the surface of the target to generate plasma. The characteristic emissions from laser-generated plasma are collected and recorded by a fiber-coupled LIBS 2000+ (Ocean Optics, Santa Clara, CA, USA) spectrometer. The fingerprint of the constituents present in the sample is obtained by analyzing the spectral lines by using OOI LIBS software. Reliable detection of several elements like Zn, Al, Mg, Fe, Ca, C, N, H, and O in snow/ice samples collected from different locations (elevation) of Manali and several snow samples collected from the Greater Himalayan region (from a cold lab in Manali, India) in different months has been demonstrated. The calibration curve approach has been adopted for the quantitative analysis of these elements like Zn, Al, Fe, and Mg. Our results clearly demonstrate that the level of contamination is higher in those samples that were collected in the month of January in comparison to those collected in February and March.

Laser drilling improving circuit board manufacturing

We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

Research on Q-Switched Nd : YAG laser engraving

IN this paper, the engraving process with Q-Switched Nd:YAG laser is investigated. High power density is the pre- requisition to vapor materials, and high repetition rate makes the engraving process highly efficient. An acousto- optic Q-Switch is applied in the cavity of CW 200 W Nd:YAG laser to achieve the high peak power density and the high pulse repetition rate. Different shape craters are formed in a patterned structure on the material surface when the laser beam irradiates on it by controlling power density, pulse repetition rate, pulse quantity and pulse interval. In addition, assisting oxygen gas is used for not only improving combustion to deepen the craters but also removing the plasma that generated on the top of craters. Off-focus length classified as negative and positive has a substantial effect on crater diameters. According to the message of rotating angle positions from material to be engraved and the information of graph pixels from computer, a special graph is imparted to the material by integrating the Q- Switched Nd:YAG laser with the computer graph manipulation and the numerically controlled worktable. The crater diameter depends on laser beam divergence and laser focal length. The crater diameter changes from 50 micrometers to 300 micrometers , and the maximum of crater depth reaches one millimeter.

Ejection of energetic photoelectrons in laser-induced autoionisation: effects of high-order ionisation processes

Resonant interaction of an autoionising state with a strong laser field is considered and effects of second-order ionisation processes are investigated. The authors show that these processes play a very important role in laser-induced autoionisation (LIA). They drastically affect the lowest-order peaks in the photoelectron spectrum. In addition to these peaks, high-order peaks due to ejection of energetic photoelectrons appear. For the laser intensities of current interest, second-order peaks are much stronger than the original ones, an important result that, they believe, can be observed experimentally. Moreover, `peak switching', a general feature of above-threshold ionisation, is also manifest in the electron spectrum of LIA.

Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

The analysis of the transient temperature distribution of double-slab Nd:YAG laser medium

A novel double-slab Nd:YAG laser, which uses face-pumped slab medium cooled by liquid with different temperatures on both sides, is proposed. The thermal distortion of wavefront caused by the non-uniform temperature distribution in the laser gain media can be self-compensated. According to the method of operation, the models of the temperature distribution and stress are presented, and the analytic solutions for the model are derived. Furthermore, the numerical simulations with pulse pumping energy of 10 J and repetition frequencies of 500 and 1000 Hz are calculated respectively for Nd:YAG laser medium. The simulation results show that the temperature gradient remains the approximative linearity, and the heat stress is within the extreme range. Then the absorption coefficient is also discussed. The result indicates that the doping concentration cannot be too large for the high repetition frequency laser. It has been proved that the high repetition frequency, high laser beam quality, and high average output power of the order of kilowatt of Nd: YAG slab laser can be achieved in this structure.

High-energy LDA switched side-pumped electro-optical Q-switched Nd : YAG ceramic laser

By employing a uniformly compact side-pumping system, a high-energy electro-optical Q-switched Nd:YAG ceramic laser has been demonstrated. With 420 W quasi-cw laser-diode-array pumping at 808 ran and a 100 Hz modulating repetition rate, 50 mJ output energy at 1064 nm was obtained with 10 ns pulse width, 5 W average output power, and 5 MW peak power. Its corresponding slope efficiency was 29.8%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output energy could be expected. Laser parameters between ceramic and single-crystal Nd:YAG lasers have been compared, and pulse characteristics of Nd:YAG ceramic with different repetition rate have been investigated in detail. The still-evolving Nd:YAG ceramics are potential super excellent media for high-energy laser applications. (C) 2007 Optical Society of America.

Fluorescence properties and laser demonstrations of Nd-doped high silica glasses prepared by sintering nanoporous glass

Porous glass with high-SiO2 content was impregnated with Nd ions, and subsequently sintered at 1100 degrees C into a compact non-porous glass in air or reducing atmosphere. Sintering in a reducing atmosphere produced an intense violet-blue fluorescence at 394 nm. However, the sintering atmospheres almost did not affect the fluorescence properties in the infrared range. A good performance Nd3+-doped silica microchip laser operating at 1064 nm was demonstrated. The Nd-doped sintering glasses with high-SiO2 content are potential host materials for high power solid-state lasers and new transparent fluorescence materials. (c) 2007 Elsevier B.V. All rights reserved.

Efficient laser oscillation of Yb : Y3Al5O12 single crystal grown by temperature gradient technique

Low-threshold and highly efficient continuous-wave laser performance of Yb:Y3Al5O12 (Yb:YAG) single crystal grown by a temperature gradient technique (TGT) was achieved at room temperature. The laser can be operated at 1030 and 1049 nm by varying the transmission of the output coupler. Slope efficiencies of 57% and 68% at 1049 and 1030 nm, respectively, were achieved for 10 at. % Yb:YAG sample in continuous-wave laser-diode pumping. The effect of pump power on the laser emission spectrum of both wavelengths is addressed. The near-diffraction-limited beam quality for different laser cavities was achieved. The excellent laser performance indicates that TGT-grown Yb:YAG crystals have very good optical quality and can be potentially used in high-power solid-state lasers.

Comparison of femtosecond and nanosecond laser-induced damage in HfO2 single-layer film and HfO2-SiO2 high reflector

HfO2 single layers, 800 run high-reflective (HR) coating, and 1064 ran HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO2 single layer is higher than the HfO2-SiO2 HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed. (c) 2007 Optical Society of America.