A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

Light-related photosynthetic characteristics of freshwater rhodophytes

Photosynthetic characteristics in response to irradiance were analysed in 21 field and culture populations of thirteen freshwater red algal species applying two distinct techniques (chlorophyll fluorescence and oxygen evolution). Photosynthesis-irradiance (PI) curves indicated adaptations to low irradiances in all species analysed, essentially characterized by occurrence of photoinhibition, low values of the saturation parameter (I-k < 225 mu mol m(-2) s(-1)) and compensation irradiance (I-c < 20 mu mol m(-2) s(-1)) and relatively high values of the effective quantum yield of photosystem II (Delta F/F'(m) >= 45). These characteristics have been reported in freshwater red algae and were confirmed from data based on the two techniques, indicating they are typically shade-adapted plants. on the other hand, some species (e.g. Batrachospermum delicatulum) can tolerate high irradiances (up to 2400 mu mol m(-2) s(-1)), suggesting they have mechanisms that enable them to avoid photodarnage of the photosynthetic apparatus. One of these mechanisms is the increase in dissipation of excessive energy captured by reaction centres after exposure to continuous irradiance, as reflected by the non-photochemical quenching fluorescence parameter in dark/light induction curves. Photo-inhibition occurred in all algae tested by both techniques. Light acclimation was evident particularly in field populations, as revealed by lower values of the saturation parameter (Ik) and the compensation irradiance (I-c) and higher values of Delta F/F'(m) in algae under low irradiances (shaded or heavily shaded stream segments), and vice-versa. Forms living within the boundary layer (e.g. crusts), in a region of reduced current velocity, tended to be more shade-adapted than semi-erect plants (e.g. non-mucilaginous or mucilaginous filaments), as indicated by highest values of photosynthetic efficiency (alpha = 0.31) and effective quantum yield (Delta F/F'(m) = 0.88) under natural conditions. Higher photo- synthetic rates (P-max) for the same species or population were observed under culture than field conditions when measured with the oxygen evolution technique, whereas the opposite trend was observed using chlorophyll fluorescence. (c) 2005 Elsevier B.V. All rights reserved.

ANALYTIC STUDY ON HIGH-VOLTAGE CROWBAR SYSTEM

Crowbar switches are largely used in plasma devices, such as field-reversed configuration (FRC) machines and tokamaks, to avoid energy return from the discharge coil to the capacitor bank. A method of identification of all resistances, inductances and currents involved in capacitor bank discharges using a crowbar is proposed based on the derivation of the general analytical form of the coil current. This analysis can also be used for optimization of the discharge, reducing the ripple amplitude inherent in the crowbar-switched current. Fitting results of the TC-1 UNICAMP FRC device are also presented in this work.

THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES

The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate blocking contacts (i.e. Metal-Oxide-Insulator-Metal Structure). We consider a uniform distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present expressions for the temperature of maximum current (T-m) and a method to calculate the density of uniformly distributed impurity states. The variation of mobility with electrical field has also been considered. Finally we plot the theoretical curves under different conditions. The present results are closing into available experimental results.

Voltage responsivity of pyroelectric sensor

Composites polymer-ceramic using castor oil-based polyurethane (PU) as non-ferroelectric matrix and Lead Zirconate Titanate (PZT) as ceramic powder have been prepared at thin films form by spin coating. The samples are poled by appropriated electric field to show piezo and pyroelectric activity. The pyroelectric coefficient p(T) at 343 K is obtained to be equal 5.8 X 10(-5) C m(-2) K-1 for a composite with 32 vol.% of ceramic. The figure of merit of this composite is six times higher than of PZT ceramic. The voltage responsivity of the pyroelectric is reduced when the thickness of the sample increases. It was used modulated white light as radiation source to excite the sensor film. The electric signal of the sensor decreases with the light modulation frequency by 1/f. (C) 1999 Elsevier B.V. S.A. All rights reserved.

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.

Relation between ambient humidity and ionic conductivity of poly(thionaphtheneindole): Behaviour as an amperometric humidity sensor

The electrical characteristics of oxidized poly(thionaphtheneindole) were investigated as a function of ambient relative humidity (r.h.). The current flowing through a pressed pellet of material between two massive gold electrodes plotted against voltage gives a wave-shaped curve with a halfwave potential at V = similar to 3 V. The current recorded at 4 V (plateau of the wave) is a sigmoidal function of r.h, with the inflexion point at similar to 60%. An interpretation of these findings is given, based on the influence of water on the dielectric constant of the material and on acid-base equilibrium between poly(thionaphtheneindole) and water, from which protons are produced. The behaviour of poly (thionaphtheneindole) as the active component of an amperometric humidity sensor is also reported.

Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance > 85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO2). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage. (C) 2007 Elsevier B.V. All rights reserved.

A low-cost neurostimulator with accurate pulsed-current control

A constant-current stimulator for high-impedance loads using only low-cost standard high-voltage components Is presented. A voltage-regulator powers an oscillator built across the primary of a step-up transformer whose secondary supplies, after rectification, the high voltage to a switched current-mirror in the driving stage. Adjusting the regulated voltage controls the pulsed-current intensity. A prototype produces stimulus of amplitude and pulsewidth within 0 less than or equal to I-skin less than or equal to 20 mA and 50 mus less than or equal to T-pulse less than or equal to 1 ms, respectively. Pulse-repetition spans from 1 Hz to 10 Hz. Worst case ripple is 3.7% at I-skin = 1 mA. Overall consumption is 5.6 W at I-skin = 20 mA.

Fabrication of novel light-emitting devices based on green-phosphor/conductive-polymer composites

We report on light-emitting devices based on a green-phosphor compound (Mn-doped zinc silicate, Zn2SiO4: Mn) dispersed in a conductive polymeric blend (poly-o-methoxyaniline/polyvinylene fluoride, POMA/PVDF-TrFE). The devices exhibited high luminance in the green, good stability and homogeneous brilliance over effective areas up to 5 cm(2). The electroluminescence (EL) spectrum presented essentially the same characteristics as the photoluminescence (PL) and cathodoluminescence spectra, indicating that the light emission originates from decay of the same excited species, regardless of the excitation source. Operating characteristics were analyzed with current density - voltage (J - V) and luminance voltage ( L - V) curves to investigate the nature of the electroluminescence of the active material, which is still not completely understood.

Nonlinear characteristics of Cr2O3, WO3, ZnO and CoO doped SnO2 varistors

SnO2 based ceramics doped with 1.0 mol% ZnO, 1.0 mol% CoO, 0.1 mol% WO3 and 0.05 mol% Cr2O3 show varistor behavior with nonlinear coefficient alpha = 33, breakdown electric field E-B = 12.5 kV/cm, leakage current I = 0.63 mA/cm(2) and average grain size of 1.52 mu m. Experimental evidence shows that the addition of Cr2O3 improves the nonlinear properties of the samples significantly, the impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the samples doped with Cr2O3. (C) 2005 Elsevier B.V. All rights reserved.

Incorporating voltage/reactive representation to short-term generation scheduling models

This paper proposes a methodology to incorporate voltage/reactive representation to Short Term Generation Scheduling (STGS) models, which is based on active/reactive decoupling characteristics of power systems. In such approach STGS is decoupled in both Active (AGS) and Reactive (RGS) Generation Scheduling models. AGS model establishes an initial active generation scheduling through a traditional dispatch model. The scheduling proposed by AGS model is evaluated from the voltage/reactive points of view, through the proposed RGS model. RGS is formulated as a sequence of T nonlinear OPF problems, solved separately but taking into account load tracking between consecutive time intervals. This approach considerably reduces computational effort to perform the reactive analysis of the RGS problem as a whole. When necessary, RGS model is capable to propose active generation redispatches, such that critical reactive problems (in which all reactive variables have been insufficient to control the reactive problems) can be overcome. The formulation and solution methodology proposed are evaluated in the IEEE30 system in two case studies. These studies show that the methodology is robust enough to incorporate reactive aspects to STGS problem.

A new three-phase transformer modeling for three-phase harmonic analysis in distribution systems

This work presents a new three-phase transformer modeling suitable for simulations in Pspice environment, which until now represents the electrical characteristics of a real transformer. It is proposed the model comparison to a three-phase transformer modeling present in EMTP - ATP program, which includes the electrical and magnetic characteristics. In addition, a set including non-linear loads and a real three-phase transformer was prepared in order to compare and validate the results of this new proposed model. The three-phase Pspice transformer modeling, different from the conventional one using inductance coupling, is remarkable for its simplicity and ease in simulation process, since it uses available voltage and current sources present in Pspice program, enabling simulations of three-phase network system including the most common configuration, three wires in the primary side and four wires in the secondary side (three-phases and neutral). Finally, the proposed modeling becomes a powerful tool for three-phase network simulations due to its simplicity and accuracy, able to simulate and analyze harmonic flow in three-phase systems under balanced and unbalanced conditions.

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Test results of a superconducting fault current limiter using YBCO coated conductor

A single-phase superconducting fault current limiter (SFCL) using a 0.9 m length of YBCO coated conductor (CC) tape was tested in 220 V-60 Hz line for fault current up to 1 kA, operating in 77 K. In this work are presented the IN experimental curves measured under DC and AC currents for the electrical characterization of the CC tape in order to design a low voltage current limiter. The experimental setup is described and the test results are presented for a unit conducting a steady nominal AC current of 50 A and also during the fault time (I to 5 cycles.) the performance of the CC-based SFCL providing the limiting resistance developed in the whole tape length after few milliseconds of the beginning of the fault was analyzed.