Expression of VEGFR-2 on HaCaT cells is regulated by VEGF and plays an active role in mediating VEGF induced effects

Vascular endothelial growth factor (VEGF) and its receptor VEGFR-2 play important roles in mitogenesis and chemotaxis of endothelial cells. In normal human skin, VEGF is expressed and secreted by epidermal keratinocytes. Emerging data suggest that keratin

One-pot synthesis of intercalating ZnO nanoparticles for enhanced dye-sensitized solar cells

In this letter we report a facile one-pot synthesis of intercalated ZnO particles for inexpensive, low-temperature solution processed dye-sensitised solar cells. High interconnectivity facilitates enhanced charge transfer between the ZnO nanoparticles and a consequent enhancement in cell efficiency. ZnO thin films were formed from a wide range of nanoparticle diameters which simultaneously increased optical scattering whilst enhancing dye loading. A possible growth mechanism was proposed for the synthesis of ZnO nanoparticles. The intercalated ZnO nanoparticle thin films were integrated into the photoanodes of dye-sensitised solar cells which showed an increase in performance of 37% compared to structurally equivalent cells employing ZnO nanowires. © 2012 Elsevier B.V.

A highly conductive and transparent solution processed AZO/MWCNT nanocomposite

A solution processed aluminum-doped zinc oxide (AZO)/multi-walled carbon nanotube (MWCNT) nanocomposite thin film has been developed offering simultaneously high optical transparency and low electrical resistivity, with a conductivity figure of merit (σDC/σopt) of ~75-better than PEDOT:PSS and many graphene derivatives. The reduction in sheet resistance of thin films of pristine MWCNTs is attributed to an increase in the conduction pathways within the sol-gel derived AZO matrix and reduced inter-MWCNT contact resistance. Films have been extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), X-ray diffractometry (XRD), photoluminescence (PL), and ultraviolet-visible (UV-vis) spectroscopy. © 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Apoptosis induction on human hepatoma cells Hep G2 of decabrominated diphenyl ether (PBDE-209)

Polybrominated diphenyl ethers (PBDEs) are an important class of halogenated organic brominated flame retardants. Because of their presence in abiotic and biotic environments widely and their structural similarity to polychlorinated biphenyls (PCBs), concern has been raised on their possible adverse health effects to humans. This study was designed to determine the anti-proliferative, apoptotic properties of decabrominated diphenyl ether (PBDE-209), using a human hepatoma Hep G2 line as a model system. Hep G2 cells were cultured in the presence of PBDE-209 at various concentrations (1.0-100.0 mu mol/L) for 72 h and the percentage of cell viability was evaluated by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyl tetrazolium bromide (MTT) assay. The results showed that PBDE-209 inhibited the cells viability in time and concentration-dependent characteristics at concentrations (10.0-100.0 mu mol/L). We found that anti-proliferative effect of PBDE-209 was associated with apoptosis on Hep G2 cells by determinations of morphological changes, cell cycle and apoptosis. Mechanism study showed that PBDE-209 could increase the generation of intracellular reactive oxygen species (ROS) concentration-dependently. Antioxidant N-acetylcyteine partially inhibited the increase of ROS. The mechanism for its hepatoma-inhibitory effects was the induction of cellular apoptosis through ROS generation. In addition, activity of lactate dehydrogenase (LDH) release increased when the cells incubated with PBDE-209 at various concentrations and times. These results suggested that PBDE-209 had the toxicity activity of anti-proliferation and induction of apoptosis in tumor cells in vitro. (c) 2007 Elsevier Ireland Ltd. All rights reserved.

Nitrate and phosphate supplementation to increase toxin production by the marine dinoflagellate Alexandrium tamarense

Alexandrium tamarense toxins have great value in biotechnology research as well as important in connection with shellfish poisoning. The influence of nitrate or nitrate and phosphate supplementation on cell biomass and toxin content were investigated in batch cultures. When cultures at low nitrate (88.2 mu M NaNO3) Were supplemented with 793.8 mu M NaNO3 at day 10 the cell density and cellular toxin contents were increased by 6-29% and 20-76%, respectively, compared with controls, and maximal values were 43,600 cells/ml (day 38) and 0.91 pg/cell (day 31). Supplementation with nitrate at day 14 or with nitrate and phosphate at day 10/14 to the cultures did not increase the cell density compared with the non-supplemented middle nitrate or high phosphate (108 mu M NaH2PO4) cultures, respectively, but increased the cellular toxin contents by an average of 52%. The results showed that supplementation with nitrate or with nitrate and phosphate at different growth phases of the cultures increased toxin yield by an average of 46%. Supplementation with nitrate at selected times to maintain continuous low level of nitrate might contribute to the effective increase of toxin yield of A. tamarense. (c) 2005 Elsevier Ltd. All rights reserved.

Improvement in growth and toxin production of Alexandrium tamarense by two-step culture method

The growth and toxin content of the dinoflagellate Alexandrium tamarense ATHK was markedly affected by culture methods. In early growth phase at lower cell density static or mild agitation methods were beneficial to growth, but continuous agitation or aeration, to some extent, had an adverse effect on cell growth. Static culture in 2 L Erlenmeyer flasks had the highest growth rate (0.38 d(-1)) but smaller cell size compared with other culture conditions. Cells grown under aerated conditions possessed low nitrogen and phosphorus cell yields, namely high N and P cell-quota. At day 18, cells grown in continuous agitated and 1 h aerated culture entered the late stationary phase and their cellular toxin contents were higher (0.67 and 0.54 pg cell(-1)) compared with cells grown by other culture methods (0.27-0.49 pg cell(-1)). The highest cell density and cellular toxin content were 17190 cells mL(-1) and 1.26 pg cell(-1) respectively in an airlift photobioreactor with two-step culture. The results indicate that A. tamarense could be grown successfully in airlift photobioreactor by a two-step culture method, which involved cultivating the cells statically for 4 days and then aerating the medium. This provides an efficient way to enhance cell and toxin yield of A. tamarense.

Positive effects of continuous low nitrate levels on growth and photosynthesis of Alexandrium tamarense (Gonyaulacales, Dinophyceae)

The growth and photosynthesis of Alexandrium tamarense (Lebour) Balech in different nutrient conditions were investigated. Low nitrate level (0.0882 mmol/L) resulted in the highest average growth rate from day 0 to day 10 (4.58 x 10(2) cells mL(-1) d(-1)), but the lowest cell yield (5420 cells mL(-1)) in three nitrate level cultures. High nitrate-grown cells showed lower levels of chlorophyll a-specific and cell-specific light-saturated photosynthetic rate (P-m(chl a) and P-m(cell)), dark respiration rate (R-d(chl a) and R-d(cell)) and chlorophyll a-specific apparent photosynthetic efficiency (alpha(chl a)) than was seen for low nitrate-grown cells; whereas the cells became light saturated at higher irradiance at low nitrate condition. When cultures at low nitrate were supplemented with nitrate at 0.7938 mmol/L in late exponential growth phase, or with nitrate at 0.7938 mmol/L and phosphate at 0.072 mmol/L in stationary growth phase, the cell yield was drastically enhanced, a 7-9 times increase compared with non-supplemented control culture, achieving 43 540 cells mL(-1) and 52 300 cells mL(-1), respectively; however, supplementation with nitrate in the stationary growth phase or with nitrate and phosphate in the late exponential growth phase increased the cell yield by no more than 2 times. The results suggested that continuous low level of nitrate with sufficient supply of phosphate may facilitate the growth of A. tamarense.

Sinibrama longianalis, a new cyprinid species (Pisces : Teleostei) from the upper Yangtze River basin in Guizhou, China

Sinibrama longianalis, a new cyprinid species from the Wu Jiang (upper Yangtze River basin) in Guizhou, China is distinguished from other congeners in having the following combination of characters: last simple dorsal-fin ray well-ossified; a snout shorter than eye diameter; eye diameter 27.1-31.6% HL; lateral line scales 56-64 (mean 59.5); circumpeduncular scales 18-21; anal fin with 24-28 (mean 25.2) branched rays, originating opposite to or slightly in advance of posterior end of dorsal-fin base, basal length 27.0-31.1% SL; pectoral fin reaching to or slightly beyond pelvic-fin insertion.

Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode

A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 mu m in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

ZnO films were grown at low pressure in a vertical metal-organic vapor deposition (MOCVD) reactor with a rotating disk. The structural and morphological properties of the ZnO films grown at different disk rotation rate (DRR) were investigated. The growth rate increases with the increase of DRR. The ZnO film grown at the DRR of 450 revolutions per minute (rpm) has the lowest X-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. In addition, the crystalline quality and morphology are improved as the DRR increased but both are degraded when the DRR is higher than 450 rpm. These results can help improve in understanding the rotation effects on the ZnO films grown by MOCVD. (C) 2007 Elsevier B.V. All rights reserved.

Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation

InGaN/GAN multiple quantum wells grown by metal-organic chemical vapor deposition were irradiated with the electron beam from a low energy accelerator. The electron irradiation induced a redshift by 50 meV in the photoluminescence spectra of the electron-irradiated InGaN/GaN quantum wells, irrespective of the exposure time to the electron beam which ranges from 10 to 1000s. The localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the Irradiated samples. Analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of the exciton-phonon coupling, indicating that the excitons are more strongly localized in the irradiated InGaN wells. The change in the pholotuminescence spectra. In the irradiated InGa/GAN quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation (C) 2009 The Japan Society of Applied Physics

A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

We have studied the influence of the growth temperature of the high-temperature (HT) AIN buffer layer on the properties of the GaN epilayer which was grown on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). It was found that the crystal quality of the GaN epilayer strongly depends on the growth temperature of the HT-AIN buffer. The growth temperature of the AIN buffer to obtain high-quality GaN epilayers lies in a narrow window of several tens of degrees. When the temperature is lower than a certain temperature range, the appearance of AIN polycrystals results in the deterioration of the crystal quality of the AIN buffer layer, which is greatly disadvantageous to the coalescence of the GaN epilayer. Although the AIN buffer's crystal quality is improved as the growth temperature increases, the Si outdiffusion from the substrate is also enhanced when the temperature is higher than a certain temperature range, which will demolish the subsequent growth of the GaN epilayer. Therefore, there exists an optimum growth temperature range of the AIN buffer around 1080degreesC for the growth of high-quality GaN epilayers. (C) 2003 Elsevier B.V. All rights reserved.