Fabrication of photonic crystal on semiconductor materials by using focued ion-beam

A method of manufacturing two-dimensional photonic crystals on several kinds of semiconductor materials in near infrared region by a focused ion beam is introduced, and the corresponding fabrication results are presented and show that the obtained parameters of fabricated photonic crystals are identical with the designed ones. Using the tunable laser source, the spectra of the fabricated passive photonic crystal and the active photonic crystal are measured. The experiment demonstrates that the focused ion-beam can be used to fabricate the perfect two-dimensional photonic crystals and their devices.

Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

Fabrication of improved FD SOIMOSFETs for suppressing edge effect

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized. The HEMT materials have a mobility of 1035cm~2/(V ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. For the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic iransecmductance of IHfimS/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. The f_t, unit-current-gain frequency of the devices,is about 18. 8GHz.

Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions

Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5 mu m, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or in-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers.

On the nature of iron in InP: A FTIR study

Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.

HIRFL-CSR complex

The construction and commissioning of HIRFL-CSR were finished in 2007. From 2000 to 2005 the subsystem and key devices of CSR were successfully fabricated, such as magnet, power supply, UHV system, e-cooler, electric-static deflector with the septum of 0.1 mm, and the fast-pulse kicker with the rise time of 150 ns. After that the CSR commissioning activities were performed in 2006 and 2007, including the accumulation of those heavy ions of C, Ar, Kr and Xe by the combination of stripping injection (STI) or multiple multi-turn injection (MMI) and e-cooling with a hollow e-beam, wide energy-range synchrotron ramping by changing the RF harmonic-number at mid-energy, the beam stacking in the experimental ring CSRe, the RIBs mass-measurement with the isochronous-mode in CSRe by using the time-of-flight method, and the ion beam slow-extraction from CSRm.

Nonconjugated Carbazoles: A Series of Novel Host Materials for Highly Efficient Blue Electrophosphorescent OLEDs

A series of carbazole derivatives was synthesized and their electrical and photophysical properties were investigated. It is shown that the triplet energy levels of these hosts are higher than that of the most popular blue phosphorescent material iridium(III) bis[(4,6-difluorophenyl)pyridinato-N,C-2'] picolinate (FIrpic) and the most extensively used phosphorescent host material 4,4'-N,N'-dicarbazole-biphenyl (CBP). These new host materials also showed good thermal stability and high glass transition temperatures (T-g) ranging from 78 to 115 degrees C as the linkage group between the carbazoles was altered. Photophysical measurements indicate that the energy transfer between these new hosts and FIrpic is more efficient than that between CBP and FIrpic. Devices incorporating these novel carbazole derivatives as the host material doped with FIrpic were fabricated with the configurations of ITO/NPB (40 nm)/host:FIrpic (30 nm)/BCP (15 nm)/AlQ (30 nm)/LiF (1 nm)/Al (150 nm). High efficiencies (up to 13.4 cd/A) have been obtained when 1,4-bis (4-(9H-carbazol-9-yl)phenyl)cyclohexane (CBPCH) and bis(4-(9H-carbazol-9-yl)phenyl) ether (CBPE) were used as the host, respectively.

Toward high-performance polymer solar cells: The importance of morphology control

Polymer solar cells have the potential to become a major electrical power generating tool in the 21st century. R&D endeavors are focusing on continuous roll-to-roll printing of polymeric or organic compounds from solution-like newspapers-to produce flexible and lightweight devices at low cost. It is recognized, though, that besides the functional properties of the compounds the organization of structures on the nanometer level-forced and controlled mainly by the processing conditions applied-determines the performance of state-of-the-art polymer solar cells. In such devices the photoactive layer is composed of at least two functional materials that form nanoscale interpenetrating phases with specific functionalities, a so-called bulk heterojunction. In this perspective article, our current knowledge on the main factors determining the morphology formation and evolution is introduced, and gaps of our understanding on nanoscale structure-property relations in the field of high-performance polymer solar cells are addressed. Finally, promising routes toward formation of tailored morphologies are presented.

Oriented polyoxometalate-polycation multilayers on a carbon substrate

In this paper, a new method of fabricating multilayers on a carbon substrate is presented. First, a uniformly charged carbon surface was prepared through molecular design. Then an ultrathin film consisting of layer-pairs of oppositely charged polymeric cationic poly(diallyldimethylammonium chloride) (PDDA) and silicotungstate, SiW12O404- (SiW12), was grown layer-by-layer onto the grafted carbon substrate using a molecular self-assembly technique and an electrochemical method. The technique allows one to prepare highly adherent, dense and smooth films of polyoxometalates with special properties. By combining cyclic voltammetry (CV) and X-ray (XR) reflectometry, it was determined that the average surface density of SiW12 was 2.10 x 10(-10) mol cm(-2), and the thickness increase per adsorption of PDDA-SiW12 was 1.7 +/- 0.2 nm, indicating that the amount of SiW12 anion per one layer adsorption corresponded to a monolayer coverage. Atomic force microscopy (AFM) was also used to examine the surface morphology and determine the grain size distribution and roughness for multilayer films. An increase in root-mean-square (RMS) surface roughness from 7 to 9 Angstrom was observed as the number of layer-pairs in the film increased from 2 to 6. FTIR results showed that the good stability of the multilayer films was due to Coulomb interactions between the SiW12 anion and the polymeric cations PDDA. Moreover, the multilayer films, in acidic aqueous solution, showed good electrocatalytic activity toward the reduction of NO2-, and the catalytic currents increased with increasing the layer numbers of SiW12 adsorption. These characteristics of the multilayer films might find potential applications in the field of sensors and microelectronics devices.

An electrochemical study of prussian blue microcrystallines mixed in PEO400 polymer electrolyte by solid-state voltammetry

The electrochemistry of Prussian blue mixed in a polymer medium containing MClO4 (M = Li+, Na+, K+, TBA(+)) as the supporting electrolyte was studied by means of solid-state voltammetry. This approach is new in Prussian blue studies. The behavior of PB in polymer electrolytes is somewhat similar to the well-known behavior for an electrochemically synthesized PB film in aqueous media. Besides, K+, Li+ and Na+ ions can also transport through the crystal of PB because of its zeolitic nature. The transport of TBA(+) ions is possible. Kinetic control lies in the diffusion of cations in and out of the lattice of Prussian blue. Reduction waves of Prussian blue depend on both the size and type of cations. PB is very stable upon electrochemical cycling in polymer electrolytes and air. This system may be used in rechargeable batteries and electrochromic devices.

基于CAN总线的分布式数据采集与控制系统

随着电子技术和计算机技术的不断发展，工业生产过程的控制系统正在向着智能化、数字化和网络化的方向发展。传统的集散控制方式和计算机分层控制方式已经开始让位于智能终端与网络结合的总线网络控制方式。当今，在工厂中过程控制环境下的分布式自动化系统变得越来越复杂，尤其系统内部的各设备之间需要快速交换大量的信息，以便实现对被控系统更为精确的控制和提供一些辅助的评价函数。这就意味着要不断增加带宽和提高通信速率以满足网络通信的需要。在现有的多种可利用网络设备中，CAN总线以其清晰的定义、极高的可靠性及其独特的设计，被认为是最能有效地解决这一问题的途径之一。而且市场上基于通信技术的产品中，就实时性考虑，由于CAN总线采用的非表意性的通信方式，因此其结构更为简单，实时性更好。基于此背景，我们以CAN总线作为通信媒介，将分布于各控制现场的传感器、执行器和控制器有序地连接起来，构成了一个基于CAN总线的分布式局域网络控制系统。本文首先介绍了基于CAN总线的分布式数据采集与控制系统的总体结构。然后从硬件方面描述了基于CAN总线的通信协议转换单元、数据采集单元和输出控制单元的功能、硬件配置及各单元功能的具体实现过程，给出了各单元的性能指标。软件方面，以C语言作为平台，开发了基于CAN总线的上位计算机管理与监控软件，实现了对整个网络设备的系统管理和系统控制功能。对于该总线系统，作者运用了PID控制和模糊控制算法实现了对水箱液位的控制，达到了理想的效果。基于CAN总线的控制系统很好地解决了集散控制系统难以解决的难题，模糊控制的应用能很好地把总线控制系统应用到具有非线性、大时滞和难于获得精确模型的控制系统中。

Manipulation of magnetic anisotropy in nanostructures

Of late, the magnetic properties of micro/nano-structures have attracted intense research interest both fundamentally and technologically particularly to address the question that how the manipulation in the different layers of nanostructures, geometry of a patterned structure can affect the overall magnetic properties, while generating novel applications such as in magnetic sensors, storage devices, integrated inductive components and spintronic devices. Depending on the applications, materials with high, medium or low magnetic anisotropy and their possible manipulation are required. The most dramatic manifestation in this respect is the chance to manipulate the magnetic anisotropy over the intrinsic preferential direction of the magnetization, which can open up more functionality particularly for device applications. Types of magnetic anisotropies of different nanostructured materials and their manipulation techniques are investigated in this work. Detail experimental methods for the quantitative determination of magnetic anisotropy in nanomodulated Ni45Fe55 thin film are studied. Magnetic field induced in-plane rotations within the nanomodulated Ni45Fe55 continuous films revealed various rotational symmetries of magnetic anisotropy due to dipolar interactions showing a crossover from lower to higher fold of symmetry as a function of modulation geometry. In a second approach, the control of exchange anisotropy at ferromagnetic (FM) – aniferomagnetic (AFM) interface in multifferoic nanocomposite materials, where two different phase/types of materials were simultaneously synthesized, was investigated. The third part of this work was to study the electroplated thin films of metal alloy nanocomposite for enhanced exchange anisotropy. In this work a unique observation of an anti-clock wise as well as a clock wise hysteresis loop formation in the Ni,Fe solid solution with very low coercivity and large positive exchange anisotropy/exchange bias have been investigated. Hence, controllable positive and negative exchange anisotropy has been observed for the first time which has high potential applications such as in MRAM devices.

Positive regularised solutions in electromagnetic inverse scattering

Fredholm integral equations of the first kind are the mathematical model common to several electromagnetic, optical and acoustical inverse scattering problems. In most of these problems the solution must be positive in order to satisfy physical plausibility. We consider ill-posed deconvolution problems and investigate several linear regularization algorithms which provide positive approximate solutions at least in the absence of errors on the data.