Exercitia spiritualia / Ignatij de Loyola.

CON: Loca quae ex diligenti cum Hispanico autographo collatione adnotata sunt in hac postrema editione. Romae : [s.n.], 25 Iunij 1596. 16 p. Sign.: A8

Ordenanças del Co[n]seio Real de su Magestad y los ara[n]zeles q[ue] han d[e] guardar los relatores, escriuanos d[e] camara, escriuanos d[e]l crime[n], escriuanos d[e] prouincia, alguaziles [et] alguaziles del ca[m]po, porteros y emplazadores ...

Imp. tomado del colofón

Los officios de Sant Ambrosio, que tractan de las obras de virtud q[ue] guia[n] a la vida bienanue[n]turada / traduzidos de lengua latina en castellana ... por Diego Gracian ...

Capitulares grab. xil.

Agonia del tra[n]sito de la muerte co[n] los auisos y consuelos que cerca della son prouechosos / escripta por el Maestro Alexio Venegas ...

Sign.: [cruz]8, a-t8

Comiença la Coronica de don Aluaro de Luna Condestable de los Reynos de Castilla y de Leon, Maestre y administrador de la orden y caualleria de Santiago.

Pie de imp. tomado del colofón.

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.

Tercero y quarto, libro de Architectura / de Sebastian Serlio Boloñes ; en los quales se trata de las maneras de como se pueden adornar los edificios, con los exemplos de las antiguedades ; traduzido de toscano en lengua castellana, por Francisco de Vill

[3a ed.]

Petri Tatareti Parisiensis, subtilium omnium facile principis, in triplicem Aristotelis philosophiam : physicam, metaphysicam, [et] ethicam, castigatissimae lucubrationes / post longas vigilias, post diutinos labores, ae sumptus eò rem hac noua nostra ed

Sign.: *8, 2*4, A-Z8, 2A-2Z8, 3A-3D8

Vida del P. Ignacio de Loyola, fundador de la religion de la Compañia de Iesus : y de los Padres ... Diego Laynez, y Francisco de Boria ... en las quales se contiene su fundacion, progresso, y aumento, hasta el año de 1572 / escritas por el padre Pedro de Ribadeneyra, de la misma Compañia

Indice a dos col.

Lirinensis galli pro catholicae fidei antiquitate & veritate, aduersus prophanas omniu[m] h[a]ereseon nouationes, Libellus verè aureus, ... repurgatus / Additum est breue commentariolum, per Ioannem Costerium.

Hojas imp. por ambas caras

Gueroco guero edo Arimaren eguitecoen gueroco utzteac cenbat calte eta çorigaitz dakharquen / gogomenac, escritura saindutic, eliçaco dotorretararic eta çuhurren liburuetaric Axular, Saraco erretorac bilduac.

Ed. berria, garbitua, chuchendua eta bere baithaco ordenan emana

Bi saindu hescualdunen bizia : San Iñazio Loiolacoarena eta San Franzizco Zabierecoarena.

Autor: Francisco R. Laphitz Arriada; tomado de: Eusko bibliographia. v. IV, p. 591

El Quijote en las escuelas

Estudio premiado por la Asociación provincial de maestros de escuelas públicas de Barcelona, en el Certamen literario conmemorativo del 3er. centenario de la publicación de "El Quijote"