997 resultados para point defects


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The n-interior point variant of the Erdos-Szekeres problem is to show the following: For any n, n-1, every point set in the plane with sufficient number of interior points contains a convex polygon containing exactly n-interior points. This has been proved only for n-3. In this paper, we prove it for pointsets having atmost logarithmic number of convex layers. We also show that any pointset containing atleast n interior points, there exists a 2-convex polygon that contains exactly n-interior points.

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This paper investigates a new approach for point matching in multi-sensor satellite images. The feature points are matched using multi-objective optimization (angle criterion and distance condition) based on Genetic Algorithm (GA). This optimization process is more efficient as it considers both the angle criterion and distance condition to incorporate multi-objective switching in the fitness function. This optimization process helps in matching three corresponding corner points detected in the reference and sensed image and thereby using the affine transformation, the sensed image is aligned with the reference image. From the results obtained, the performance of the image registration is evaluated and it is concluded that the proposed approach is efficient.

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We study the tradeoff between the average error probability and the average queueing delay of messages which randomly arrive to the transmitter of a point-to-point discrete memoryless channel that uses variable rate fixed codeword length random coding. Bounds to the exponential decay rate of the average error probability with average queueing delay in the regime of large average delay are obtained. Upper and lower bounds to the optimal average delay for a given average error probability constraint are presented. We then formulate a constrained Markov decision problem for characterizing the rate of transmission as a function of queue size given an average error probability constraint. Using a Lagrange multiplier the constrained Markov decision problem is then converted to a problem of minimizing the average cost for a Markov decision problem. A simple heuristic policy is proposed which approximately achieves the optimal average cost.

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Super-resolution imaging techniques are of paramount interest for applications in bioimaging and fluorescence microscopy. Recent advances in bioimaging demand application-tailored point spread functions. Here, we present some approaches for generating application-tailored point spread functions along with fast imaging capabilities. Aperture engineering techniques provide interesting solutions for obtaining desired system point spread functions. Specially designed spatial filters—realized by optical mask—are outlined both in a single-lens and 4Pi configuration. Applications include depth imaging, multifocal imaging, and super-resolution imaging. Such an approach is suitable for fruitful integration with most existing state-of-art imaging microscopy modalities.

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We consider a discrete time system with packets arriving randomly at rate lambda per slot to a fading point-to-point link, for which the transmitter can control the number of packets served in a slot by varying the transmit power. We provide an asymptotic characterization of the minimum average delay of the packets, when average transmitter power is a small positive quantity V more than the minimum average power required for queue stability. We show that the minimum average delay will grow either as log (1/V) or 1/V when V down arrow 0, for certain sets of values of lambda. These sets are determined by the distribution of fading gain, the maximum number of packets which can be transmitted in a slot, and the assumed transmit power function, as a function of the fading gain and the number of packets transmitted. We identify a case where the above behaviour of the tradeoff differs from that obtained from a previously considered model, in which the random queue length process is assumed to evolve on the non-negative real line.

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We study the process of bound state formation in a D-brane collision. We consider two mechanisms for bound state formation. The first, operative at weak coupling in the worldvolume gauge theory, is pair creation of W-bosons. The second, operative at strong coupling, corresponds to formation of a large black hole in the dual supergravity. These two processes agree qualitatively at intermediate coupling, in accord with the correspondence principle of Horowitz and Polchinski. We show that the size of the bound state and time scale for formation of a bound state agree at the correspondence point. The time scale involves matching a parametric resonance in the gauge theory to a quasinormal mode in supergravity.

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A simple approach for obtaining room temperature ferroelectricity in ZnO rod structures at the nanoscale is reported. A systematic comparative study between two kinds of nanorods prepared by different processes reveals the physics behind it. It is observed that ZnO nanorods grown (in-situ) by a sol gel method on platinum substrate show ferroelectric behaviour. On the contrary, ZnO nanorods first grown by a sol gel method and then spin-coated on a platinum substrate (ex-situ) do not demonstrate this kind of feature. X-ray diffraction analysis confirms partially (002) and (100) plane oriented growth of both samples. From photoluminescence (PL) spectral analysis it is interpreted that oxygen vacancies/zinc interstitial defects, which arises from the large lattice mismatch between the Pt substrate and the ZnO nanorods grown thereon, and preferential ZnO growth along 002], can be causes of this type of phenomena. C-V characterization, P-E hysteresis loop along with piezoelectric force microscopy support this observation.

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The effect of annealing on structural defects and d(0) ferromagnetism in SnO2 nanoparticles prepared by solution combustion method is investigated. The as-synthesized SnO2 nanoparticles were annealed at 400-800 degrees C for 2 h, in ambient conditions. The crystallinity, size, and morphology of the samples were studied using x-ray diffraction and transmission electron microscopy studies. The annealing results in grain growth due to coarsening as well as reduction in oxygen vacancies as confirmed by Raman spectroscopy, photoluminescence spectroscopy, and x-ray photoelectron spectroscopy. All the as synthesized and annealed samples exhibit room temperature ferromagnetism (RTFM) with distinct hysteresis loops and the saturation magnetization as high as similar to 0.02 emu/g in as-synthesized samples. However, the saturation magnetization is drastically reduced with increasing annealing temperature. Further the presence of singly charged oxygen vacancies (V-o(-) signal at g-value 1.99) is confirmed by electron paramagnetic resonance studies, which also diminish with increasing annealing temperature. The observed diminishing RTFM and simultaneous evidences of diminishing O vacancies clearly indicate that RTFM is driven by defects in oxide lattice and confirms primary role of oxygen vacancies in inducing ferromagnetic ordering in metal oxide semiconductors. The study also provides improved fundamental understanding regarding the ambiguity in the origin of intrinsic RTFM in semiconducting metal oxides and projects their technological application in the field of spintronics. (C) 2013 AIP Publishing LLC.

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Structural, iono (IL) and thermoluminescence (TL) studies of Zn2SiO4:Sm3+ (1-5 mol%) nanophosphor bombarded with swift heavy ions in the fluence range 3.91 x 10(12)-21.48 x 10(12) cm(-2) have been carried out. The average crystallite sizes for pristine and ion irradiated for 3.91 x 10(12) ions cm(-2) and 21.48 x 10(12) ions cm(-2) were found to be 34, 26 and 20 nm. With increase of ion fluence, the intensity of XRD peaks decreases and FWHM increases. The peak broadening indicates the stress induced point/clusters defects produced due to heavy ion irradiation. IL studies were carried out for different Sm3+ concentrations in Zn2SiO4 by irradiating with ion fluence of 15.62 x 10(12) ions cm(-2). The characteristic emission peaks at similar to 562, 599, 646 and 701 nm were recorded by exciting Si7+ ions in the fluence range 3.91 x 10(12)-21.48 x 10(12) ions cm(-2). These peaks were attributed to (4)G(5/2)-> H-6(5/2) (562 nm), (4)G(5/2)-> H-6(7/2) (599 nm), (4)G(5/2)-> H-6(9/2) (646 nm), and (4)G(5/2)-> H-6(5/2) (701 nm) transitions of Sm3+. The highest emission was recorded at 3 mol% of Sm3+ doped Zn2SiO4. TL studies were carried out for 3 mol% Sm3+ concentration in the fluence range 3.91 x 10(12)-21.48 x 10(12) ions cm(-2). Two U glow peaks at 152 and 223 degrees C were recorded. The kinetic parameters (E, b, and s), were estimated using Chen's peak shape method. Simple glow curve structure (223 degrees C), highly resistive, increase in TL. intensity up to 19.53 x 10(12) ions cm(-2), simple trap distribution makes Zn2SiO4:Sm3+ (3 mol%) phosphor highly useful in radiation dosimetry.

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Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-nc) embedded in amorphous silicon dioxide (a-SiO2) are studied in this paper using a self-consistent quantum-continuum based modeling framework. Si-ncs or quantum dots show photoluminescence at room temperature. Whether its origin is due to Si-nc/a-SiO2 interface defects or quantum confinement of carriers in Si-nc is still an outstanding question. Earlier reports have shown that stresses greater than 12 GPa change the indirect energy band gap structure of bulk Si to a direct energy band gap structure. Such stresses are observed very often in nanostructures and these stresses influence the carrier confinement energy significantly. Hence, it is important to determine the effect of stress in addition to the structure of interface defects on photoluminescence property of Si-nc. In the present work, first a Si-nc embedded in a-SiO2 is constructed using molecular dynamics simulation framework considering the actual conditions they are grown so that the interface and residual stress in the structure evolves naturally during formation. We observe that the structure thus created has an interface of about 1 nm thick consisting of 41.95% of defective states mostly Sin+ (n = 0 to 3) coordination states. Further, both the Si-nc core and the embedding matrix are observed to be under a compressive strain. This residual strain field is applied in an effective mass k.p Hamiltonian formulation to determine the energy states of the carriers. The photo luminescence property computed based on the carrier confinement energy and interface energy states associated with defects will be analysed in details in the paper.

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The n-interior-point variant of the Erdos Szekeres problem is the following: for every n, n >= 1, does there exist a g(n) such that every point set in the plane with at least g(n) interior points has a convex polygon containing exactly n interior points. The existence of g(n) has been proved only for n <= 3. In this paper, we show that for any fixed r >= 2, and for every n >= 5, every point set having sufficiently large number of interior points and at most r convex layers contains a subset with exactly n interior points. We also consider a relaxation of the notion of convex polygons and show that for every n, n >= 1, any point set with at least n interior points has an almost convex polygon (a simple polygon with at most one concave vertex) that contains exactly n interior points. (C) 2013 Elsevier Ltd. All rights reserved.

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The Msh4-Msh5 protein complex in eukaryotes is involved in stabilizing Holliday junctions and its progenitors to facilitate crossing over during Meiosis I. These functions of the Msh4-Msh5 complex are essential for proper chromosomal segregation during the first meiotic division. The Msh4/5 proteins are homologous to the bacterial mismatch repair protein MutS and other MutS homologs (Msh2, Msh3, Msh6). Saccharomyces cerevisiae msh4/5 point mutants were identified recently that show two fold reduction in crossing over, compared to wild-type without affecting chromosome segregation. Three distinct classes of msh4/5 point mutations could be sorted based on their meiotic phenotypes. These include msh4/5 mutations that have a) crossover and viability defects similar to msh4/5 null mutants; b) intermediate defects in crossing over and viability and c) defects only in crossing over. The absence of a crystal structure for the Msh4-Msh5 complex has hindered an understanding of the structural aspects of Msh4-Msh5 function as well as molecular explanation for the meiotic defects observed in msh4/5 mutations. To address this problem, we generated a structural model of the S. cerevisiae Msh4-Msh5 complex using homology modeling. Further, structural analysis tailored with evolutionary information is used to predict sites with potentially critical roles in Msh4-Msh5 complex formation, DNA binding and to explain asymmetry within the Msh4-Msh5 complex. We also provide a structural rationale for the meiotic defects observed in the msh4/5 point mutations. The mutations are likely to affect stability of the Msh4/5 proteins and/or interactions with DNA. The Msh4-Msh5 model will facilitate the design and interpretation of new mutational data as well as structural studies of this important complex involved in meiotic chromosome segregation.

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In this work, we present a study on the negative differential resistance (NDR) behavior and the impact of various deformations (like ripple, twist, wrap) and defects like vacancies and edge roughness on the electronic properties of short-channel MoS2 armchair nanoribbon MOSFETs. The effect of deformation (3 degrees-7 degrees twist or wrap and 0.3-0.7 angstrom ripple amplitude) and defects on a 10 nm MoS2 ANR FET is evaluated by the density functional tight binding theory and the non-equilibrium Green's function approach. We study the channel density of states, transmission spectra, and the I-D-V-D characteristics of such devices under the varying conditions, with focus on the NDR behavior. Our results show significant change in the NDR peak to valley ratio and the NDR window with such minor intrinsic deformations, especially with the ripple. (C) 2013 AIP Publishing LLC.

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The voltage ripple and power loss in the DC-capacitor of a voltage source inverter depend on the harmonic currents flowing through the capacitor. This paper presents double Fourier series based harmonic analysis of DC capacitor current in a three-level neutral point clamped inverter, modulated with sine-triangle PWM. The analytical results are validated experimentally on a 5-kVA three-level inverter prototype. The results of the analysis are used for predicting the power loss in the DC capacitor.

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We consider the problem of characterizing the minimum average delay, or equivalently the minimum average queue length, of message symbols randomly arriving to the transmitter queue of a point-to-point link which dynamically selects a (n, k) block code from a given collection. The system is modeled by a discrete time queue with an IID batch arrival process and batch service. We obtain a lower bound on the minimum average queue length, which is the optimal value for a linear program, using only the mean (λ) and variance (σ2) of the batch arrivals. For a finite collection of (n, k) codes the minimum achievable average queue length is shown to be Θ(1/ε) as ε ↓ 0 where ε is the difference between the maximum code rate and λ. We obtain a sufficient condition for code rate selection policies to achieve this optimal growth rate. A simple family of policies that use only one block code each as well as two other heuristic policies are shown to be weakly optimal in the sense of achieving the 1/ε growth rate. An appropriate selection from the family of policies that use only one block code each is also shown to achieve the optimal coefficient σ2/2 of the 1/ε growth rate. We compare the performance of the heuristic policies with the minimum achievable average queue length and the lower bound numerically. For a countable collection of (n, k) codes, the optimal average queue length is shown to be Ω(1/ε). We illustrate the selectivity among policies of the growth rate optimality criterion for both finite and countable collections of (n, k) block codes.