Computationally efficient models for simulation of non-ideal DC-DC converters operating in continuous and discontinuous conduction modes

This paper discusses dynamic modeling of non-isolated DC-DC converters (buck, boost and buck-boost) under continuous and discontinuous modes of operation. Three types of models are presented for each converter, namely, switching model, average model and harmonic model. These models include significant non-idealities of the converters. The switching model gives the instantaneous currents and voltages of the converter. The average model provides the ripple-free currents and voltages, averaged over a switching cycle. The harmonic model gives the peak to peak values of ripple in currents and voltages. The validity of all these models is established by comparing the simulation results with the experimental results from laboratory prototypes, at different steady state and transient conditions. Simulation based on a combination of average and harmonic models is shown to provide all relevant information as obtained from the switching model, while consuming less computation time than the latter.

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

We have addressed the microscopic transport mechanism at the switching or `on-off' transition in transition metal dichalcogenide (TMDC) field-effect transistors (FETs), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultrathin WSe2 and MoS2 FETs on insulating SiO2 substrates where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in a random resistor network, particularly, in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry, or carrier mobility, which can be extended to other classes of 2D material-based devices as well.

Indentation Creep Behavior in Ce-Based Bulk Metallic Glasses at Room Temperature

The room temperature creep behaviors of Ce-based bulk metallic glasses were examined by the use of nanoindentation. The creep rate and creep rate sensitivity of Ce-based BMGs were derived from indentation creep curves. The low creep rate sensitivity of Ce-based BMGs indicates that the room temperature creep is dominated by localized shear flow. The experimental creep curves can be described by a generalized Kelvin model. Furthermore, the creep retardation spectrum is calculated for the Ce-based metallic glasses. The results showed that creep retardation spectrum consists of two relatively separated peaks with the well defined characteristic relaxation times.

Room temperature magnetic quantum cellular automata

All computers process information electronically. A processing method based on magnetism is reported here, in which networks of interacting submicrometer magnetic dots are used to perform logic operations and propagate information at room temperature. The logic states are signaled by the magnetization direction of the single-domain magnetic dots; the dots couple to their nearest neighbors through magnetostatic interactions. Magnetic solitons carry information through the networks, and an applied oscillating magnetic field feeds energy into the system and serves as a clock. These networks offer a several thousandfold increase in integration density and a hundredfold reduction in power dissipation over current microelectronic technology.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Transient Natural Ventilation of a Room with a Distributed Heat Source

We report on an experimental and theoretical study of the transient flows which develop as a naturally ventilated room adjusts from one temperature to another. We focus on a room heated from below by a uniform heat source, with both high- and low-level ventilation openings. Depending on the initial temperature of the room relative to (i) the final equilibrium temperature and (ii) the exterior temperature, three different modes of ventilation may develop. First, if the room temperature lies between the exterior and the equilibrium temperature, the interior remains well-mixed and gradually heats up to the equilibrium temperature. Secondly, if the room is initially warmer than the equilibrium temperature, then a thermal stratification develops in which the upper layer of originally hot air is displaced upwards by a lower layer of relatively cool inflowing air. At the interface, some mixing occurs owing to the effects of penetrative convection. Thirdly, if the room is initially cooler than the exterior, then on opening the vents, the original air is displaced downwards and a layer of ambient air deepens from above. As this lower layer drains, it is eventually heated to the ambient temperature, and is then able to mix into the overlying layer of external air, and the room becomes well-mixed. For each case, we present new laboratory experiments and compare these with some new quantitative models of the transient flows. We conclude by considering the implications of our work for natural ventilation of large auditoria.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Numerical analysis of spatial evolution of the small signal gain in a chemical oxygen-iodine laser operating without primary buffer gas

A chemical oxygen iodine laser (COIL) that operates without primary buffer gas has become a new way of facilitating the compact integration of laser systems. To clarify the properties of spatial gain distribution, three-dimensional (3-D) computational fluid dynamics (CFD) technology was used to study the mixing and reactive flow in a COIL nozzle with an interleaving jet configuration in the supersonic section. The results show that the molecular iodine fraction in the secondary flow has a notable effect on the spatial distribution of the small signal gain. The rich iodine condition produces some negative gain regions along the jet trajectory, while the lean iodine condition slows down the development of the gain in the streamwise direction. It is also found that the new configuration of an interleaving jet helps form a reasonable gain field under appropriate operation conditions. (c) 2007 Elsevier Ltd. All rights reserved.