IMPROVEMENT OF STRUCTURAL INSTABILITY OF THE ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET)

Three causes involved in the instability of the ISFET are proposed in this study. First, it is ascertained that hydroxyl group resident at the surface of the Si3N4 film or in the electrolyte solution is most active and subject to gain or loss of electrons. This is one of the main causes for ISFET structural instability. Secondly, the stability of the pH-sensitive FET varies with deposition conditions in the fabrication process of the ISFET. This proves to be another cause of ISFET instability. Thirdly, the pH of the measured solution varies with the measuring process and time, contributing to the instability, but is not a cause of the instability of the pH-ISFET itself. We utilized the technique of readjusting and controlling the ratio of hydroxyl groups to amine groups to enhance the stability of the ISFET. Our techniques to improve stability characteristics proved to be effective in practice.

A NOVEL ODOR SENSOR COATED WITH A LIPID-MEMBRANE

In this paper, an interdigital electrode lipid film odour sensor (ILOS) is designed, fabricated and tested. It is made from a microfabricated chemiresistor coated with a synthetic multibilayer film. Nine odorants in gas phase at room temperature have been detected using the odour sensor. For most of the odorants, the relation between the response of the ILOS and odorant concentration obeys Stevens' power law, and there is a good correlation between the minimum odorant concentrations that give rise to a change of the sensor's conductance and human olfactory thresholds.

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.

High-speed electrooptical VOA integrated in silicon-on-insulator

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

Electro-mass olfactory multi-sensor (EMMS)

For an olfactory sensor or electronic nose, the task is not only to detect the object concentration, but also to recognize it. It is well known that all the elements can be identified by their charge to mass ratio e(+)/m. We tried to imitate this principle for molecular recognition. Two kinds of sensors are used simultaneously in testing. One is quartz crystal microbalance (QCM) for detecting the change in mass, the other is interdigital electrode (IE) for detecting the change in conduction, as an electro-mass multi-sensor (EMMS). in this paper, the principle and the feasibility of this method are discussed. The preliminary results on the recognition of alcohol by EMMS coated with lipids are presented. Meanwhile, the multi-sensor can also be used as an instrument for research on some physico-chemistry problems. The change in conduction of coated membrane caused by one absorbed molecule is reported. It is found that when a QCM is coated with membrane, it still obeys the relationship Delta F (frequency change of QCM) = K Delta m (mass change of absorbed substance) and the proportional coefficient, K, depends not only on quartz properties but also on membrane characteristics as well. (C) 2000 Elsevier Science S.A. All rights reserved.

压电纤维复合材料铺层用于翼面设计的驱动特性与刚度影响

压电纤维复合材料驱动器在形状控制、振动控制、颤振抑制与抖振控制等方面有广泛的应用前景. 首先简单介绍了压电应变驱动的比拟载荷方法, 并采用该方法讨论了压电陶瓷片状驱动器与压电纤维复合材料驱动器在驱动特性上的主要差异. 在此基础上, 对压电纤维复合材料在不同铺设方式、铺设角度与铺设层数下的驱动特性进行了分析, 在刚度影响方面展示了不同铺设角度下模型刚轴的移动. 分析结果表明: 对称铺设反向电场可以同时获得弯曲与扭转变形, 而反对称铺设同向电场主要获得扭转变形; 两种铺设方式下45°铺设角均获得最大弦向转角, 而0°铺设角将获得最大挠度; 多铺层可以增加驱动载荷, 但总体变形效果还取决于结构系统的刚度比例; 对称铺设方式下铺设角对结构刚轴移动的影响非常明显, 在气动弹性控制中应着重关注.

压电驱动器应变传递模型分析

随着压电材料结构在航空航天结构控制领域的广泛应用, 压电驱动器与主体结构间的应变传递问题的研究日益重要. 该文首先对压电驱动器应用中的应变传递模型----均匀应变模型与Bernoulli-Euler模型进行了优缺点的分析对比; 其次将Bernoulli-Euler模型用于考虑胶层影响情况, 考虑到压电驱动器在航空航天领域的应用, 着重类似于翼面结构的模型分析, 得到了实际应用中压电驱动器沿结构厚度方向的应变传递表达式; 最后通过数值计算的方法确定了所得应变表达式适用的胶粘剂弹性模量及厚度的范围. 结果表明此表达式的有效性, 使 Bernoulli-Euler模型的应用更接近于实际情况, 同时为智能结构实际应变分布的分析提供了一定的依据与基础

Glass wafers bonding via Diels-Alder reaction at mild temperature

In this paper, we introduced a novel bonding method of glass wafers by Diels-Alder reaction at mild temperature. After standard hydroxylization and aminosilylation, two wafers were modified by 2-furaldehyde and maleic anhydride, respectively. Then they were brought into close contact and tightly held with a clamping fixture. A strong bonding could be achieved by annealing for 5 h at 200 degrees C. Bonding strength is as high as 1.78 MPa and sufficient for most application of microfluidic chips.