Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1+/-3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained. (C) 2003 American Institute of Physics.

Interplay between partial incoherence, partial inelasticity, resonance, and heterogeneity in long-range electron transfer and transport

A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Raman scattering of nanocrystalline silicon embedded in SiO2

Raman scattering of nanocrystalline silicon embedded in SiO2 matrix is systematically investigated. It is found that the Raman spectra can be well fitted by 5 Lorentzian lines in the Raman shift range of 100-600 cm(-1). The two-phonon scattering is also observed in the range of 600-1100 cm(-1) The experimental results indicate that the silicon crystallites in the films consist of nanocrystalline phase and amorphous phase; both can contribute to the Raman scattering. Besides the red-shift of the first order optical phonon modes with the decreasing size of silicon nanocrystallites, we have also found an enhancement effect on the second order Raman scattering, and the size effect on their Raman shift.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

高分子溶液中物理凝胶化的Monte Carlo模拟和小角中子散射研究

高分子凝胶广泛地存在于自然界以及日常生活中，按其形成作用力不同分为化学凝胶和物理凝胶两大类。由于高分子物理凝胶具有凝胶化的可逆性及其对环境条件强烈的响应性，因此，在近半个世纪的研究与应用中受到极大的关注。高分子溶液中的物理凝胶因其结构及形成机制复杂，在实验方面，除了散射技术及流变技术能够有效地揭示它的部分信息外，其它的实验手段很难用于这个领域的研究；在理论方面，化学凝胶的理论已经比较成熟，而物理凝胶的粘弹性质以及凝胶化是一个远离平衡态的松弛过程，除了一些特征的标度指数外，人们还没有得到适用于高分子物理凝胶的普适规律。当前，由于计算机模拟理论及模拟方法的发展，使得计算机模拟成为除了实验和理论研究方法之外的第三个重要的研究方法。但是，由于物理凝胶化行为的复杂性，用实验和理论获得的信息很难较好地描述凝胶化过程，而计算机模拟的高度透明性及反映信息的完整性，有助于理解这一复杂过程中所涉及的物理本质。因此，利用计算机模拟结合实验及理论方法深入研究高分子物理凝胶的形成机制、结构与性能关系已成为目前最有效的手段之一。 本论文主要运用Monte Carlo模拟方法，并结合小角中子散射（Small-Angle Neutron Scattering, SANS）和流变（Rheology）等实验手段从多个角度探讨了以下几类典型的高分子溶液物理凝胶化行为。 1. 温度对遥爪型三嵌段共聚物在选择性溶剂中的自组装及凝胶化行为影响的研究：采用二维简单方格子Monte Carlo模拟方法，结合逾渗（Percolation）理论，建立了溶胶－凝胶转变相图在统计热力学中的确定方法；甄别了具有特征构象的链，讨论了链及胶束的聚集，明晰了相互作用（体现为约化温度）、构象转变、聚集与凝胶化的一致的关联关系；提出了构象转变模型，进而明确了此体系的凝胶化过程，在微观尺度上表现为桥型链和环型链之间的竞争。 2. 模拟模型改进及其应用到持续长度对稀溶液中高分子链构象影响的研究：考虑到原始八位置键涨落模型效率低，实现复杂且不能应用到复杂的高分子体系，对该模型进行了改进，使其实现简单、效率高，并拓宽了该模型的应用范围。然后，以刚性对均聚物构象的影响为例，发现随着刚性增加，均聚物构象从球形椭球到棒状椭球的转变，并对比了自由连接链（Free Joint Chain, FJC）模型和蠕虫链（Wormlike Chain, WLC）模型在不同刚性范围内对高分子链末端距预测的偏差，首次给出了这两个经典模型的半定量的适用边界。 3. 溶剂尺寸对遥爪型三嵌段共聚物在选择性溶剂中的自组装及凝胶化行为影响的研究：用改进后的八位置键涨落Monte Carlo模型，研究了遥爪型三嵌段共聚物在选择性溶剂条件下的聚集和凝胶化对溶剂尺寸的依赖性，发现溶剂尺寸效应对凝胶化的作用是非单调的。由一个均聚物体系的对比模拟证明这种作用主要是由熵驱动的，并给出了中分子溶剂的半定量定义。在均聚物和嵌段共聚物溶液中，不同尺寸的溶剂分子可以使溶液由于高分子聚集不同而具有不同的微结构，并影响高分子链构象和溶液的性质。从多个角度研究了三嵌段共聚物在不同尺寸溶剂的溶液中所遵循的三种不同的凝胶化机理。 4. 聚氧化乙烯－氧化丙稀－氧化乙烯三嵌段共聚物（poly(ethylene oxide)-poly (propylene oxide)-poly-(ethylene oxide), PEO-PPO-PEO）重水溶液凝胶化的小角中子散射（SANS）和Monte Carlo研究：结合Pluronic F127（EO65PO99EO65）/D2O三嵌段共聚物溶液的特征，对照SANS数据，用改进后的八位置键涨落模型成功地从模拟中获得了F127/D2O的溶胶－凝胶转变相图。详细地考察了体系的微观结构，提出此类高分子溶液中形成的物理凝胶包含高分子逾渗网络的生成，以及被束缚溶剂（Bound Solvent）必须超过离散组分体系逾渗的临界体积分数的机理。着重研究了一定浓度的F127水溶液随温度升高引起的溶胶－凝胶转变以及凝胶－溶胶转变的Reentrant相行为，发现体系在低温区域的溶胶－凝胶转变遵循相同的机理，而在中等温度和较高温度以及不同浓度区域中的凝胶－溶胶转变遵循不同的机理。 5. 极性基团饱和度和溶剂条件对两亲性聚合物在溶液中的聚集行为和凝胶化影响的研究：用改进后的八位置键涨落模型，针对两亲性聚合物在不同溶剂条件的溶液建立了粗粒化模型，以两亲性聚合物中极性基团的饱和度，溶剂条件和高分子浓度为变量，考察了其对链构象、聚集及其凝胶化的影响。 6. 多糖水溶液凝胶化的流变和小角中子散射研究：用流变和SANS考察了两个多糖水溶液中物理凝胶化过程，针对由氢键主导的水基凝胶体系的典型特征进行了讨论，从分子链构象，聚集体结构及其关联以及流变特征等方面对聚强电解质角叉胶（Carrageenan）水溶液和聚弱电解质明胶（Pectin）水溶液进行了详细的讨论。考察了不同多糖的种类（聚合物链的电荷密度），盐的种类和浓度，溶液温度等对凝胶化和凝胶结构的影响，分析了不同多糖溶液的凝胶化机理。

POLARIZATION OF HOT PHOTOLUMINESCENCE IN QUANTUM-WELLS AND HEAVY-LIGHT HOLE MIXING

Hot electrons excited from the valence band by linearly polarized laser light are characterized by certain angular distributions in momenta. Owing to such angular distributions in momenta, the photoluminescence from the hot electrons shows a certain degree of polarization. A theoretical treatment of this effect observed in the photoluminescence in quantum wells is given, showing that the effect depends strongly on heavy and light hole mixing. The very large disparity between the experimentally observed and theoretically expected values of the degree of polarization in the hot-electron photoluminescence suggests the presence of random quasielastic scattering. The effects of such additional scattering and the presence of a perpendicular magnetic field are incorporated into the theory. it is shown that the measurements of the degree of polarization observed in the hot electron photoluminescence, with and without an applied perpendicular magnetic field can serve to determine the time constants for both LO-phonon inelastic and random quasielastic scattering. As an example, these time constants are determined for the experiments reported in the literature.

Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD

ZnO nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition （MOCVD）. The diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process. Measurements such as scanning electron microscope （SEM）, X-ray diffraction （XRD）, Raman scattering and photoluminescence （pL） spectrum were employed to analyze the differences of these nanorods. It was found that when both carrier gas flux of Zn and O reactant are 1 SLM, we can obtain the best vertically aligned and uniform nanorods. Furthermore, the PL spectrum reveals a blueshift of UV emission peak, which may be assigned to the increase of surface effect.

Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Experimental study of the beta-delayed neutron decay of N-21

The first spectroscopic study for the beta decay of N-21 is carried out based on beta-n, beta-gamma, and beta-n-gamma coincidence measurements. The neutron-rich N-21 nuclei are produced by the fragmentation of the E/A=68.8 MeV Mg-26 primary beam on a thick Be-9 target and are implanted into a thin plastic scintillator that also plays the role of beta detector. The time of flight of the emitted neutrons following the beta decay are measured by the surrounding neutron sphere and neutron wall arrays. In addition, four clover germanium detectors are used to detect the beta-delayed gamma rays. Thirteen new beta-delayed neutron groups are observed with a total branching ratio of 90.5 +/- 4.2%. The half-life for the beta decay of N-21 is determined to be 82.9 +/- 7.5 ms. The level scheme of O-21 is deduced up to about 9 MeV excitation energy. The experimental results for the beta decay of N-21 are compared to the shell-model calculations.

Microscopic Three-Body Force Effect on Nucleon-Nucleon Cross Sections in Symmetric Nuclear Matter

We provide a microscopic calculation of neutron-proton and proton-proton cross sections in symmetric nuclear matter at various densities, using the Brueckner-Hartee-Fock approximation scheme with the Argonne V-14 potential including the contribution of microscopic three-body force. We investigate separately the effects of three-body force on the effective mass and on the scattering amplitude. In the present calculation, the rearrangement contribution of three-body force is considered, which will reduce the neutron and proton effective mass, and depress the amplitude of cross section. The effect of three body force is shown to be repulsive, especially in high densities and large momenta, which will suppress the cross section markedly.

Efficiency calibration of neutron detector array for beta decay of exotic nuclei

The research of the in-beam efficiency calibration of Neutron Detector Array of Peking University using N-17 and C-16 beams was introduced in this paper. The efficiency of neutron wall and ball are comparable to the foreign similar devices and neutrons can be detected from low to high energies in high efficiency.

Probing the medium effect and isospin dependence of the in-medium nucleon-nucleon cross section in heavy ion collisions

Probing in-medium nucleon-nucleon (NN) cross section sigma(1)(NN)(alpha) in heavy ion collisions has been investigated by means of the isospin-dependent quantum molecular dynamics (IQMD) with the isospin- and momentum- dependent interaction (IMDI(tau)). It is found that there are the very obvious medium effect and the sensitive isospin- dependence of nuclear stopping R on the in-medium NN cross section sigma(1)(NN)(alpha) in the nuclear reactions induced by halo-neutron projectile and the same-mass stable projectile. However, R induced by the neutron-halo projectile is obviously lower than that induced by the corresponding stable projectile. In particular, there is a very obvious dependence of R on the medium effect of sigma(1)(NN)(alpha) in the whole beam energy region for the above two kinds of projectiles. Therefore, the comparison between the results of R's in the reactions induced by the neutron-halo projectile and the corresponding same-mass stable projectile is a more favourable probe for extracting the information of sigma(1)(NN)(alpha) because of adding a new judgement.

Study of the LED based light calibration system for neutron wall detector

The light calibration system is one of the key components of Neutron Wall detector. It is used to calibrate the electronics and to monitor the long-term stability of the detector modules. With the detaile investigations, a calibration system with high-power LED (3W) driven by the fast pulses has been carried out. It is also tested together with the detector module of the Neutron Wall and the result of the preliminary calibration demonstrates that it fulfills the needs. It's a new design proposal to the light calibration system of the fast scintillator detector.