溶胶-凝胶多孔二氧化硅减反膜稳定性研究

多孔SiO2膜层经热处理后，具有很高的激光破坏阈值，但是结构中有许多Si-OH亲水基团，导致光学透过率受环境相对湿度的影响很大。实验目的是改善膜层内部结构，使膜层结构中的亲水基团转变为疏水基团。提高膜层的疏水性，增强膜层的透过率稳定性。系统地研究了膜层透过率随时间变化的规律，在氨气和六甲基二硅氮烷(HMDS)混合气氛下热处理膜层，处理后生成Si-O-Si(CH2)3非极性疏水基团，使膜层的疏水性大大提高，因而膜层的透过率稳定性有大幅度提高。稳定性的提高延长了膜层的寿命。处理后膜层的表面粗糙度良好，均方根表

Laser tunable Toraldo superresolution with a uniform nonlinear pupil filter

We demonstrate that it is possible to reduce the focal spot size by inserting a uniform nonlinear thin film at the aperture of a focusing lens. The reduction of spot size is tunable by adjusting the incoming laser power. In comparison with the original diffraction spot, the transverse spot size can be reduced 0.65 times. The nonlinear thin film acts effectively as a Toraldo filter, and the phase and amplitude modulation stems from the laser-induced variances in the transmission of the thin film. The proposed technique removes the need of fabricating annular pupil filters. (C) 2008 Optical Society of America.

355 nm脉冲激光诱导等离子体开关削波

利用激光诱导等离子体开关技术,对355 nm脉冲激光自削波进行了实验和理论研究。分别采用5种不同焦距的透镜,集中讨论了透镜焦距及激光器输出单脉冲能量对脉宽压缩的影响,发现采用焦距为200 mm的透镜能够获得最佳的脉冲压缩效果。在聚焦透镜焦距200 mm,单脉冲能量160 mJ时,获得最短脉宽3.47 ns；在激光电离Cu小孔内壁表面及空气击穿共同作用下,获得了脉宽最短达2.11 ns的脉冲激光输出。此外,根据实验结果得到了355 nm激光空气击穿阈值,并与理论估算值进行比较,两者结果较为一致。

脉冲激光晶化非晶硅薄膜的有限差分模拟

根据热传导原理，建立了脉冲激光晶化非晶硅薄膜的理论模型。运用有限差分方法研究了不同激光波长、能量密度等因素对薄膜温度变化及相变过程的影响。计算了不同波长激光器对厚度500nm非晶硅晶化的阈值能量密度。结果发现，准分子晶化的阈值能量密度最低，但是在同样的能量密度下，熔融深度却不及使用更长波长的激光器。计算并分析了升高衬底温度对结晶速度和晶粒尺寸的影响，模拟结果较好地验证了实验结论和规律。

透红外含碲氟铝基玻璃的激光损伤阈值

在氟铝酸盐玻璃组分中加入适量声子能量低的重金属氧化物TeO2，得到一种新的氧氟化物玻璃。该材料具有良好的成玻璃性能，适合制作大尺寸红外窗口镜。研究了TeO2含量对玻璃特征温度、阿贝数和红外透过性能的影响。同时测试了这种玻璃的抗DF激光能力，结果表明：TeO2含量为15％的玻璃，DF激光破坏阈值达14．95kW·cm^-2。分析显示，由于玻璃基质的多声子吸收，对激光能量的吸收而引起的热冲击是导致玻璃破坏的主要原因。进一步降低玻璃中水分，可以提高玻璃抗激光破坏性能。

Three-dimensional micro- and nano-fabrication in transparent materials by femtosecond laser

Femtosecond pulsed lasers have been widely used for materials microprocessing. Due to their ultrashort pulse width and ultrahigh light intensity, the process is generally characterized by the nonthermal diffusion process. We observed various induced microstructures such as refractive-index-changed structures, color center defects, microvoids and microcracks in transparent materials (e.g., glasses after the femtosecond laser irradiation), and discussed the possible applications of the microstructures in the fabrication of various micro optical devices [e.g., optical waveguides, microgratings, microlenses, fiber attenuators, and three-dimensional (3D) optical memory]. In this paper, we review our recent research developments on single femtosecond-laser-induced nanostructures. We introduce the space-selective valence state manipulation of active ions, precipitation and control of metal nanoparticles and light polarization-dependent permanent nanostructures, and discuss the mechanisms and possible applications of the observed phenomena.

不同沉积参量下ZrO_2薄膜的微结构和激光损伤阈值

ZrO2采用X射线衍射(XRD)技术分析了不同充氧条件和沉积温度对ZrO2溥膜组成结构的影响，并对不同工艺下制备的薄膜的表面粗糙度和激光损伤阈值进行了测量。结果发现随着氧压的升高，ZrO2溥膜将由单斜相多晶态逐渐转变为非晶态结构，而随着基片温度的增加，溥膜将由非晶态逐渐转变为单斜相多晶态。同时发现随着氧压升高晶粒尺寸减小，而随着沉积温度增加，晶粒尺寸增大。氧压增加时工艺对表面粗糙度有一定程度的改善，而沉积温度升高，工艺对表面粗糙度的改善不明显。晶粒尺寸大小变化与表面粗糙度变化存在对应关系。激光损伤测量表明

全内反射式衍射光栅近场光学特性

利用傅里叶模式理论分析了具有高衍射效率的全内反射式衍射光栅在TE和TM偏振态下的近场光分布特点，讨论了光栅结构参数以及入射角度对光栅内电场增强的影响。结果表明：全内反射光栅内部电场分布对偏振态较敏感，光栅槽深和占宽比对电场增强影响较小，光栅内的峰值电场随光栅周期增大而增大，并且峰值电场随着入射角度的增大而减小。在应用于高功率激光时，降低光栅内部的电场增强可以有效降低损伤风险。

Design of high-efficiency diffraction gratings based on rigorous coupled-wave analysis for 800nm wavelength

We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 800 nm. The optimized grating can achieve > 95% diffraction efficiency in the first order at an incident angle of 5 degrees from Littrow and a wavelength from 770nm to 830 nm, with peak diffraction efficiency of > 99.5% at 800 nm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-efficiency, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti:sapphire laser systems.

Micromachining of glassy carbon toolsets for micro embossing applications

Laser micro machining is fast gaining popularity as a method of fabricating micro scale structures. Lasers have been utilised for micro structuring of metals, ceramics and glass composites and with advances in material science, new materials are being developed for micro/nano products used in medical, optical, and chemical industries. Due to its favourable strength to weight ratio and extreme resistance to chemical attack, glassy carbon is a new material that offers many unique properties for micro devices. The laser machining of SIGRADUR® G grade glassy carbon was characterised using a 1065 nm wavelength Ytterbium doped pulsed fiber laser. The laser system has a selection of 25 preset waveforms with optimised peak powers for different pulsing frequencies. The optics provide spot diameter of 40 μm at the focus. The effect of fluence, transverse overlap and pulsing frequency (as waveform) on glassy carbon was investigated. Depth of removal and surface roughness were measured as machining quality indicators. The damage threshold fluence was determined to be 0.29 J/cm2 using a pulsing frequency of 250 kHz and a pulse width of 18 ns (waveform 3). Ablation rates of 17 < V < 300 μm3/pulse were observed within a fluence range of 0.98 < F < 2.98 J/cm2. For the same fluence variation, 0.6 μm to 6.8 μm deep trenches were machined. Trench widths varied from 29 μm at lower fluence to 47 μm at the higher fluence. Square pockets, 1 mm wide, were machined to understand the surface machining or milling. The depth of removal using both waveform 3 and 5 showed positive correlation with fluence, with waveform 5 causing more removal than waveform 3 for the same fluence. Machined depths varied from less than 1 μm to nearly 40 μm. For transverse overlap variation using waveform 3, the best surface finish with Rz = 1.1 μm was obtained for fluence 0.792 J/cm2 for transverse overlap of 1 μm, 6 μm, and 9 μm at machined depths of 22.9 μm, 6.6 μm, and 4.6 μm respectively. For fluence of 1.426 J/cm2, the best surface finish with Rz = 1.2 μm was obtained for transverse overlap of 6 μm, and 9 μm at machined depths of 12.46 μm, and 8.6 μm respectively. The experimental data was compiled as machining charts and utilised for fabricating a micro-embossing glassy carbon master toolsets as a capability demonstration.

Vulnerability assessment of buildings subject to tunnel-induced settlements: the influence of orientation and position of the building

The assessment of settlement induced damage on buildings during the preliminary phase of tunnel excavation projects, is nowadays receiving greater attention. Analyses at different levels of detail are performed on the surface building in proximity to the tunnel, to evaluate the risk of structural damage and the need of mitigation measures. In this paper, the possibility to define a correlation between the main parameters that influence the structural response to settlement and the potential damage is investigated through numerical analysis. The adopted 3D finite element model allows to take into account important features that are neglected in more simplified approaches, like the soil-structure interaction, the nonlinear behaviour of the building, the three dimensional effect of the tunnelling induced settlement trough and the influence of openings in the structure. Aim of this approach is the development of an improved classification system taking into account the intrinsic vulnerability of the structure, which could have a relevant effect on the final damage assessment. Parametric analyses are performed, focusing on the effect of the orientation and the position of the structure with respect to the tunnel. The obtained results in terms of damage are compared with the Building Risk Assessment (BRA) procedure. This method was developed by Geodata Engineering (GDE) on the basis of empirical observations and building monitoring and applied during the construction of different metro lines in urban environment. The comparison shows a substantial agreement between the two procedures on the influence of the analysed parameters. The finite element analyses suggest a refinement of the BRA procedure for pure sagging conditions.

Small SiGe quantum dots obtained by excimer laser annealing

In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. Based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. The formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 Elsevier B.V. All rights reserved.

1.58 mu m InGaAs quantum well laser on GaAs

We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics.

Low-threshold high-temperature operation of lambda similar to 7.4 mu m quantum cascade lasers

We report low-threshold high-temperature operation of 7.4 mu m strain-compensated InGaAs/InAlAs quantum cascade lasers (QCLs). For an uncoated 22-mu m-wide and 2-mm-long laser, the low-threshold current densities, i.e. 0.33 kA/cm(2) at 81 K in pulsed mode and 0.64 kA/cm(2) at 84 K in cw mode, are realized. High-temperature operation of uncoated devices, with a high value of 223 K, is achieved in cw mode.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.