Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ion-sensing properties of 1D vanadium pentoxide nanostructures

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural and vibrational analysis of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering

The structural and vibrational properties of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering were analyzed in a wide composition range (0 < x < 0.18). The films were structurally characterized using x-ray diffraction with Rietveld refinement. The corresponding vibrational properties were investigated using micro-Raman and Fourier transform infrared spectroscopies. The films present a high crystallized fraction, crystallites having wurtzite structure, and high orientation texture with the c axis oriented perpendicular to the substrate surface. Rietveld analysis indicates that Mn atoms are incorporated substitutionally into Ga positions and show that the ionic character of cation-N bonds along the c axis is favored by the Mn incorporation. No evidence for Mn segregation or Mn rich phases was found in the composition range analyzed. Micro-Raman scattering spectra and infrared absorption experiments showed progressive changes with the increase of x and monotonic shifts of the GaN TO and LO peaks to lower frequencies. The structural and vibrational analyses are compared and the influence of Mn on the static and dynamic properties of the lattice is analyzed. (C) 2007 American Institute of Physics.

Temperature dependence of electron properties of Sn doped In2O3 nanobelts

This paper reports on the measurements of transport properties of high crystalline quality Sn doped In2O3 nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current-voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices' construction. (C) 2007 Elsevier B.V. All rights reserved.

Low-temperature, self-nucleated growth of indium-tin oxide nanostructures by pulsed laser deposition on amorphous substrates

Indium-tin oxide nanostructures were deposited by excimer laser ablation in a nitrogen atmosphere using catalyst-free oxidized silicon substrates at 500 degrees C. Up to 1 mbar, nanowires grew by the vapor-liquid-solid (VLS) mechanism, with the amount of liquid material decreasing as the deposition pressure increased. The nanowires present the single-crystalline cubic bixbyite structure, oriented < 100 >. For the highest pressure used, pyramids were formed and no sign of liquid material could be observed, indicating that these structures grew by a vapor-solid mechanism. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Nanocrystalline Ga1-xMnxN films grown by reactive sputtering

The growth of nanocrystalline Ga1-zMnxN (0.00 <= x <= 0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in a N-2 atmosphere by co-sputtering technique using a Ga target covered with small pieces of Mn onto c-GaAs (10 0), c-Si (10 0) and amorphous SiO2 substrates maintained at 500 K. Scanning electron microscopy and X-ray diffraction (XRD) experiments did not show any evidence for Mn segregation within the studied composition range. EDX measurements show that the Mn concentration is increased monotonically with the fraction of the target area covered by Mn. The XRD characterization show that the films are nanocrystalline, the crystallites having mean grain sizes in the 15-19 nm range and wurtzite structure with preferential growth orientation along the c-axis direction. The lattice parameters of alpha-GaN (a and c) increase practically linearly with the increase of Mn incorporation. The changes in the structural properties of our films due to the Mn incorporation are similar to those that occur in ferromagnetic GaMnN single-crystal films. (c) 2006 Elsevier B.V. All rights reserved.

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.

Raman scattering study of zincblende InxGa1-xN alloys

We report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-InxGa1-xN (0 ≤ x ≤ 0.31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of InxGa1-xN alloy exhibit a one-mode-type behavior. Their frequencies at Γ lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the C-In0.31Ga0.69N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of ≈0.80.

Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Implementación de obligaciones sobre propiedad intelectual de los tratados de libre comercio con EE.UU.: experiencia de Chile

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Study of ITO@PMMA composites by transmission electron microscopy

ITO nanowires were synthesized by carbothermal reduction process, using a co-evaporation method, and have controlled size, shape, and chemical composition. The electrical measurements of nanowires showed they have a resistance of about 102 Ω. In order to produce nanocomposites films, nanowires were dispersed in toluene using an ultrasonic cleaner, so the PMMA polymer was added, and the system was kept under agitation up to obtain a clear suspension. The PMMA polymer was filled with 1, 2, 5 and 10% in weight of nanowires, and the films were done by tape casting. The results showed that the electrical resistance of nanocomposites changed by over 7 orders of magnitude by increasing the amount of filler, and using 5 wt% of filler the composite resistance decreased from 1010 Ω to about 104 Ω, which means that percolation threshold of wires occurred at this concentration. This is an interesting result once for nanocomposites filled with ITO nanoparticles is necessary about 18% in weight to obtain percolation. The addition of filler up to 10 wt% decreased the resistance of the composite to 103 Ω, which is a value close to the resistance of wires. The composites were also analyzed by transmission electron microscopy (TEM), and the TEM results are in agreement with the electrical ones about percolation of nanowires. These results are promising once indicates that is possible to produce conductive and transparent in the visible range films by the addition of ITO nanowires in a polymeric matrix using a simple route. © 2011 Materials Research Society.

La inversión en el sector de telecomunicaciones del Perú en el período 1994-2000

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Search for new physics in events with same-sign dileptons and b-tagged jets in pp collisions at √ s = 7TeV

A search for new physics is performed using isolated same-sign dileptons with at least two b-quark jets in the final state. Results are based on a 4.98 fb -1 sample of protonproton collisions at a centre-of-mass energy of 7TeV collected by the CMS detector. No excess above the standard model background is observed. Upper limits at 95% confidence level are set on the number of events from non-standard-model sources. These limits are used to set constraints on a number of new physics models. Information on acceptance and efficiencies are also provided so that the results can be used to confront additional models in an approximate way. © 2012 SISSA.

A study of the precursors and photoactivity of nanostructures of Ti oxides synthesized by the alkaline hydrothermal method

The present study describes the synthesis, characterization and photocatalytic potential of Ti oxide nanostructures of various morphologies and crystalline phases that were synthesized from 4 different precursors by the alkaline hydrothermal method. The materials were characterized by mainly X-ray diffraction (XRD), Raman spectroscopy, scanning and transmission electron microscopy (SEM and TEM), thermogravimetric analysis (TGA) and X-ray absorption spectroscopy (XAS). Also, photocatalytic potential was assessed by rhodamine B photodegradation. The materials obtained from peroxytitanium complexes (PTCs) exhibited a strong dependence on the concentration of KOH ([KOH]) used for synthesis. The pre-formed sheets of the PTCs were critical to the formation of nanostructures such as nanoribbons, and they were also compatible with the rolling up process, which can be utilized to form structures such as nanorods, nanowires or nanotubes. In the rhodamine photodegradation tests, TiO2 anatase nanostructures with six-coor inated Ti were more effective than the titanate ones (five-coordinated), despite having a smaller surface area and fewer OH groups. The lower photoactivity of the titanates was attributed to the presence of five-coordinated titanium species (TiO5), which may act as electron-hole recombination centers. Furthermore, the material with a mixture of TiO2/titanate was shown to be promising for photocatalytic applications. © 2013 by American Scientific Publishers.

Comparison of the nanoparticles performance in the photocatalytic degradation of a styrene-butadiene rubber nanocomposite

Much has been talking about the advantages of polymeric nanocomposites, but little is known about the influence of nanoparticles on the stability of these materials. In this sense, we studied the influence of both oxides of zirconium and titanium, known to have photocatalytic properties, as well as the influence of synthetic clay Laponite on the photodegradation of styrene-butadiene rubber (SBR). SBR nanocomposites were prepared by the colloidal route by mixing commercial polymer lattices and nanometric anatase TiO2, monoclinic ZrO2 or exfoliated Laponite clays colloidal suspensions. To better understand the degradation mechanisms that occur in these nanocomposites, the efficiency of different photocatalysts under ultraviolet radiation was monitored by FT-IR and UV-vis spectroscopies and by differential scanning calorimetric. It was observed that TiO2 and ZrO2 nanoparticles undoubtedly acted as catalysts during the photodegradation process with different efficiencies and rates. However, when compared to pure SBR samples, the polymer degradation mechanism was unaffected. Unlike studies with nanocomposites montmorillonite, exfoliated laponite clay effectively acts as a photostabilizer of polymer UV photodegradation. Copyright © 2012 Wiley Periodicals, Inc.