Intelligent prediction of ground vibration in coal formations using ANN

The present paper details the prediction of blast induced ground vibration, using artificial neural network. The data was generated from five different coal mines. Twenty one different parameters involving rock mass parameters, explosive parameters and blast design parameters, were used to develop the one comprehensive ANN model for five different coal bearing formations. A total of 131 datasets was used to develop the ANN model and 44 datasets was used to test the model. The developed ANN model was compared with the USBM model. The prediction capability to predict blast induced ground vibration, of the comprehensive ANN model was found to be superior.

Lattice Reduction Aided Detection in Large-MIMO Systems

Lattice reduction (LR) aided detection algorithms are known to achieve the same diversity order as that of maximum-likelihood (ML) detection at low complexity. However, they suffer SNR loss compared to ML performance. The SNR loss is mainly due to imperfect orthogonalization and imperfect nearest neighbor quantization. In this paper, we propose an improved LR-aided (ILR) detection algorithm, where we specifically target to reduce the effects of both imperfect orthogonalization and imperfect nearest neighbor quantization. The proposed ILR detection algorithm is shown to achieve near-ML performance in large-MIMO systems and outperform other LR-aided detection algorithms in the literature. Specifically, the SNR loss incurred by the proposed ILR algorithm compared to ML performance is just 0.1 dB for 4-QAM and < 0.5 dB for 16-QAM in 16 x 16 V-BLAST MIMO system. This performance is superior compared to those of other LR-aided detection algorithms, whose SNR losses are in the 2 dB to 9 dB range.

Octahedral distortion induced magnetic anomalies in LaMn0.5Co0.5O3 single crystals

Single crystals of LaMn0.5Co0.5O3 belonging to the ferromagnetic-insulator and distorted perovskite class were grown using a four-mirror optical float zone furnace. The as-grown crystal crystallizes into an orthorhombic Pbnm structure. The spatially resolved 2D Raman scan reveals a strain-induced distribution of transition metal (TM)-oxygen (O) octahedral deformation in the as-grown crystal. A rigorous annealing process releases the strain, thereby generating homogeneous octahedral distortion. The octahedra tilt by reducing the bond angle TM-O-TM, resulting in a decline of the exchange energy in the annealed crystal. The critical behavior is investigated from the bulk magnetization. It is found that the ground state magnetic behavior assigned to the strain-free LaMn0.5Co0.5O3 crystal is of the 3D Heisenberg kind. Strain induces mean field-like interaction in some sites, and consequently, the critical exponents deviate from the 3D Heisenberg class in the as-grown crystal. The temperature-dependent Raman scattering study reveals strong spin-phonon coupling and the existence of two magnetic ground states in the same crystal. (C) 2014 AIP Publishing LLC.

High-Temperature Deformation Processing Map Approach for Obtaining the Desired Microstructure in a Multi-component (Ni-Ti-Cu-Fe) Alloy

An equiatomic NiTiCuFe multi-component alloy with simple body-centered cubic (bcc) and face-centered cubic solid-solution phases in the microstructure was processed by vacuum induction melting furnace under dynamic Ar atmosphere. High-temperature uniaxial compression experiments were conducted on it in the temperature range of 1073 K to 1303 K (800 degrees C to 1030 degrees C) and strain rate range of 10(-3) to 10(-1) s(-1). The data generated were analyzed with the aid of the dynamic materials model through which power dissipation efficiency and instability maps were generated so as to identify the governing deformation mechanisms that are operative in different temperature-strain rate regimes with the aid of complementary microstructural analysis of the deformed specimens. Results indicate that the stable domain for the high temperature deformation of the multi-component alloy occurs in the temperature range of 1173 K to 1303 K (900 degrees C to 1030 degrees C) and (epsilon) over dot range of 10(-3) to 10(-1.2) s(-1), and the deformation is unstable at T = 1073 K to 1153 K (800 degrees C to 880 degrees C) and (epsilon) over dot = 10(-3) to 10(-1.4) s(-1) as well as T = 1223 K to 1293 K (950 degrees C to 1020 degrees C) and (epsilon) over dot = 10(-1.4) to 10(-1) s(-1), with adiabatic shear banding, localized plastic flow, or cracking being the unstable mechanisms. A constitutive equation that describes the flow stress of NiTiCuFe multi-component alloy as a function of strain rate and deformation temperature was also determined. (C) The Minerals, Metals & Materials Society and ASM International 2015

Structural and magnetic properties of Dy3+ doped Y3Fe5O12 for microwave devices

The Dy3+ doped Y3-xDyxFe5O12 (x=0-3) nanopowders were prepared using microwave hydrothermal route. The structural and morphological studies were analyzed using transmission electron microscope, X-ray diffractometer and field emission scanning electron microscope. The nanopowders were sintered at 900 degrees C/90 min using microwave furnace. Dense ceramics with theoretical density of around 95% was obtained. Ferro magnetic resonance (FMR) spectrum and microwave absorption spectrum of Dy3+ doped YIG were studied, the signal exhibits a resonance character for all Dy3+ variations. It was observed that the location of the FMR signal peak at the field axes monotonically shifts to higher field with increasing Dy3+ content. The dielectric and magnetic properties (epsilon', epsilon `', mu' and mu `') of Dy3+ doped YIG were studied over a wide range of frequency (1-50 GHz). With increase of Dy3+ both epsilon' and mu' decreased. The low values of dielectric, magnetic properties and broad distribution of FMR line width of these ceramics are opening the real opportunity to use them for microwave devices above K- band frequency. (C) 2015 Elsevier Ltd. All rights reserved.

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Laser Melted TiC Reinforced Nickel Aluminide Matrix in situ Composites

Titanium carbide reinforced nickel aluminide matrix in situ composites were produced using a newly patented laser melting furnace. Microstructure of the laser melted TiC/(Ni3Al–NiAl) in situ composites was characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results showed that the constituent phases in the laser melted in situ composites are TiC, Ni3Al and NiAl. Volume fraction of TiC and NiAl increase with increasing content of titanium and carbon. The growth morphology of the reinforcing TiC carbide has typically faceted features, indicating that the lateral growth mechanism is still predominant growth mode under rapid.

Wave dynamic processes induced by a supersonic projectile discharging from a shock tube

A numerical study on wave dynamic processes occurring in muzzle blast flows, which are created by a supersonic projectile released from the open-end of a shock tube into ambient air, is described in this paper. The Euler equations, assuming axisymmetric flows, are solved by using a dispersion-controlled scheme implemented with moving boundary conditions. Three test cases are simulated for examining friction effects on the muzzle flow. From numerical simulations, the wave dynamic processes, including two blast waves, two jet flows, the bow shock wave and their interactions in the muzzle blasts, are demonstrated and discussed in detail. The study shows that the major wave dynamic processes developing in the muzzle flow remain similar when the friction varies, but some wave processes, such as shock-shock interactions, shock-jet interactions and the contact surface instability, get more intensive, which result in more complex muzzle blast flows.

Analytical Study of Idealized Two-Dimensional Cellular Detonations

In this study, the idealized two-dimensional detonation cells were decomposed into the primary units referred to as sub-cells. Based on the theory of oblique shock waves, an analytical formula was derived to describe the relation between the Mach number ratio through triple-shock collision and the geometric properties of the cell. By applying a modified blast wave theory, an analytical model was developed to predict the propagation of detonation waves along the cell. The calculated results show that detonation wave is, first, strengthened at the beginning of the cell after triple-shock collision, and then decays till reaching the cell end. The analytical results were compared with experimental data and previous numerical results; the agreement between them appears to be good, in general.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Some implications of the volcanic theophany of YHWH on his primeval identity

Abstract: YHWH’s theophany and mode of action are frequently evoked in the Bible as a volcanic event. It is shown here that this representation, of central importance in the story of the Sinai Covenant, is probably not anchored in any specific volcanic eruption experienced by the Israelites in the past. In Antiquity, volcanic activity was specifically associated with the gods who patronized metallurgy, given the homology between lava flowing from a volcano and slag released from a furnace at smelting. Evidence towards such a link is also identified in the Bible. Accordingly, rather than being simply a literary artifice imaging the outstanding powers of YHWH, volcanism may reflect the existence of metallurgical roots in Israelite theology. This contention is supported by Biblical evidences associating YHWH with metal production: (i) his primeval dominion in mining areas, (ii) his special worship by metalworkers, (iii) the representation of his celestial universe as a giant furnace. It is concluded that the volcanic representation of YHWH’s theophany and mode of action reveal a surprising level of preservation of the metallurgic religious traditions in the ancient Israelite theology.

Progress In Modeling Of Fluid Flows In Crystal Growth Processes

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.