Combinatorial Frequency Generation in Quasi-Periodic Stacks of Nonlinear Dielectric Layers

Three-wave mixing in quasi-periodic structures (QPSs) composed of nonlinear anisotropic dielectric layers, stacked in Fibonacci and Thue-Morse sequences, has been explored at illumination by a pair of pump waves with dissimilar frequencies and incidence angles. A new formulation of the nonlinear scattering problem has enabled the QPS analysis as a perturbed periodic structure with defects. The obtained solutions have revealed the effects of stack composition and constituent layer parameters, including losses, on the properties of combinatorial frequency generation (CFG). The CFG features illustrated by the simulation results are discussed. It is demonstrated that quasi-periodic stacks can achieve a higher efficiency of CFG than regular periodic multilayers.

Temperature dependence of the mid-infrared dielectric function of YBCO in the ab plane

We have excited mid-infrared surface plasmons in two YBCO thin films of contrasting properties using attenuated total reflection of light and found that the imaginary part of the dielectric function decreases linearly with reduction in temperature. This result is in contrast with the commonly reported conclusion of infrared normal reflectance studies. If sustained it may clarify the problem of understanding the normal state properties of YBCO and the other cuprates. The dielectric function of the films, epsilon = epsilon(1) + i epsilon(2), was determined between room temperature and 80K: epsilon(1) was found to be only slightly temperature dependent but somewhat sample dependent, probably as a result of surface and grain boundary contamination. The imaginary part, epsilon(2), (and the real part of the conductivity, sigma(1),) decreased linearly with reduction in temperature in both films. Results obtained were: for film 1: epsilon(1) = - 14.05 - 0.0024T and epsilon(2) - 4.11 + 0.086T and for film 2: epsilon(1) = - 24.09 + 0.0013T and epsilon(2) = 7.66 + 0.067T where T is the temperature in Kelvin. An understanding of the results is offered in terms of temperature-dependent intrinsic intragrain inelastic scattering and temperature-independent contributions: elastic and inelastic grain boundary scattering and optical interband (or localised charge) absorption. The relative contribution of each is estimated. A key conclusion is that the interband (or localised charge) absorption is only similar to 10%. Most importantly, the intrinsic scattering rate, 1/tau, decreases linearly with fall in temperature, T, in a regime where current theory predicts dependence on frequency, omega, to dominate. The coupling constant, lambda, between the charge carriers and the thermal excitations has a value of 1.7, some fivefold greater than the far infrared value. These results imply a need to restate the phenomenology of the normal state of high temperature superconductors and seek a corresponding theoretical understanding.

DC resistance and dielectric function at 3392 nm of YBCO films from 300 K to 80 K

The dielectric function of a YBCO film was determined at 3392nm at temperatures down to 80K. Results obtained were epsilon(i) = -24.09 - 0.0013T and epsilon(i) = 7.66 + 0.067T. The results for epsilon(i) are compared with the de resistance of the film. Intrinsic intragrain scattering, elastic and inelastic grain boundary scattering and optical interband absorption are estimated as 82%, 5%, 13% and 10% respecively at 0K.

Interwoven spiral arrays on ferrite-dielectric substrates for high-impedance metasurfaces

A high impedance metasurface (HIMS) composed of the arrays of intertwined planar spirals on thin (~0.1λ) ferrite-dielectric substrate is proposed. The HIMS exhibits fractional bandwidth in excess of 10% and excellent angular and polarisation stability of the circular polarised waves at oblique incidence.

Morphology dependence of the dielectric properties of epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition on vicinal surfaces of (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) single-crystal substrates. Atomic force microscopy was used to investigate the surface topography of the deposited films. The morphology of the films, of the BaTiO3/SrTiO3 interfaces, and of the column boundaries was investigated by cross-sectional high-resolution transmission electron microscopy. Measurements of the dielectric properties were performed by comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different numbers of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm and linearly decreases with decreasing film thickness below a thickness of 75 nm. At the same thickness of 75 nm, the thickness dependence of the dielectric constant also exhibits a change in the linear slope both for BaTiO3 films and BaTiO3/SrTiO3 multilayers. This behaviour is explained by the change observed in the grain morphology at a thickness of 75 nm. For the thickness dependence of the dielectric constant, two phenomenological models are considered, viz. a 'series-capacitor' model and a 'dead-layer' model.

Microstructure and dielectric properties of epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition (PLD) on (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) substrates. Measurements of the dielectric properties were performed comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different number of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm, and linearly decreases with decreasing film thickness below a thickness of 75 nm, and it is independent on the number of multilayers, pointing to some interface effect. The thickness dependence of the dielectric constant of BaTiO3 films and BaTiO3/SrTiO3 multilayers; exhibits a change in the linear slope at a thickness of 75 nm. This behavior is explained by the change observed in the morphology at a thickness of 75 nm. In order to explain the thickness dependence of the dielectric constant, two approaches are considered in this paper, viz. a "series capacitor" model and a "dead layer" model.

Non-reciprocity in doubly periodic strip arrays on ferrite-dielectric substrate

Doubly periodic arrays of strip conductors printed on a composite ferrite-dielectric substrate have been investigated at oblique incidence of linear polarized plane waves. The simulation results revealed strong non-reciprocity of wave reflectance and transmittance at positive and negative angles of incidence. It is also shown that the non-reciprocity is further enhanced by the strip conductor pattern. 

Millimetre wave dielectric characterisation of multilayer LTCC substrate

The paper reports on the mm-wave characterization of a low temperature co-fired ceramic (LTCC) substrate. A substrate integrated resonator (SIW) method is presented for robust extraction of both permittivity and loss tangent of the substrate. The data obtained allow full characterization of the substrate in the 71 GHz – 95 GHz frequency range suitable for accurate modelling of E-and W-band printed circuits.

Multilayer Dielectric Stack Parameter Modelling for FSS Design

This paper discusses modelling multilayer dielectric stacks for use as substrate support for frequency selective surface. A method of a fast simulation of multilayer dielectric stack as a complementary tool for FSS design is proposed. Using the method analysis of effect of different parts of the multilayer stack has been performed. The tool has also been used for extraction of material parameters from the measured results. Measured transmission and reflection of a sample manufactured material stack show good agreement with the simulated results obtained for extracted material parameters.

Compact dielectric-filled waveguide filters and diplexers

This paper presents electromagnetic simulations of dielectric-filled rectangular waveguide bandpass filter structures with microstrip to waveguide transitions as well as a diplexer based on such filters for modern wireless systems. The two bandpass filters have been designed and simulated at centre frequencies of 11.85 and 14.25 GHz, respectively. A significant size reduction is achieved through dielectric filling.

Compact filters using metal-dielectric inserts

A novel filter based on e-plane metal-dielectric insert in rectangular waveguide is proposed. Properties of the structure containing metallic septa, C- and I-shaped resonators placed in waveguide are investigated. Pseudo-elliptic cross-coupled filter with direct source-load coupling is designed, simulated and fabricated. Experimental results are presented to prove feasibility of the filter. Significant size reduction is achieved.

Humidity passive sensors based on UHF RFID using cork dielectric slabs

In this paper we show the design of passive UHF RFID tag antenna on cork substrate. Due to the cork sensitivity to humidity changes, we can use the developed sensor to sense changes in the relative humidity of the environment, without the need for batteries. The antenna is built using inkjet printing technology, which allows a good accuracy of the design manufacturing. The sensor proved usable for humidity changes detection with a variation of threshold power from 11 to 15 dB between 60 and near 100% humidity levels. Presenting, therefore, reading ranges between 3 to 5 meters. © 2015 EurAAP.

Preparation, Characterisation And Microwave Dielectric Properties Of Anbn-1o3n (N=5,6,8) Type Perovskite Compounds

The present study on the preparation , characterization and microwave dielectric properties of AnBn-1O3n (N=5,6,8) type perovskite compounds. The explored ceramics show dielectric constant between 11 and 54,quality factor in the range 2400 to 88900 GHz and Tf in the range -73 to +231ppm/0C.Most of the investigated cation deficient hexagonal perovskites show intermediate dielectric constant with high quality factors. This study gives a general introduction about material, scientific and technological aspects of DRs.Three important ,€r ,Q and Tf, used for the DR characterization are described. The relationship of the above parameters with the fundamental material characteristics is discussed. Different modes are excited when a DR is excited with suitable microwave spectrum of frequencies .A description of analytical determination of frequencies and construction of mode charts used for sample design and mode identification are also discussed. In this study several ceramics are developed for DR purposes, very little attention has been paid to grow the single crystals. It might be due to the fact that the difficulties and time involved in the growth of single crystals, big enough to function as microwave resonators make them expensive .However single crystals of these materials may have very high Q values. It is also possible that a better understanding of the dielectric properties in relation to the structure can be arrived using single crystals. Hence one of the future directions of dielectric resonator research should be to grow good quality single crystals of the above materials.