Interaction between tsunami waves and isolated conical Islands

A newly developed computer model, which solves the horizontal two-dimensional Boussinesq equations using a total variation diminishing Lax-Wendroff scheme, has been used to study the runup of solitary waves, with various heights, on idealized conical islands consisting of side slopes of different angles. This numerical model has first been validated against high-quality laboratory measurements of solitary wave runups on a uniform plane slope and on an isoliated conical island, with satisfactory agreement being achieved. An extensive parametric study concerning the effects of the wave height and island slope on the solitary wave runup has subsequently been carried out. Strong wave shoaling and diffraction effects have been observed for all the cases investigated. The relationship between the runup height and wave height has been obtained and compared with that for the case on uniform plane slopes. It has been found that the runup on a conical island is generally lower than that on a uniform plane slope, as a result of the two-dimensional effect. The correlation between the runup with the side slope of an island has also been identified, with higher runups on milder slopes. This comprehensive study on the soliton runup on islands is relevant to the protection of coastal and inland regions from extreme wave attacks. © the Coastal Education & Research Foundation 2012.

The fabrication and properties of InAs/GaAs columnal islands

A columnal islands system, which was composed of three layers of self-assembled InAs/GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate. The effects of the thickness of GaAs space layer, the growth interruption time and the amount of InAs deposition on the emission wavelength of columnal islands were presented. The image of atomic force microscopy (AFM) indicated the columnal islands with high uniformity in size and shape. At room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4 mum; however, the emission wavelength of single-layer QDs with normal height was just 1. l mum. It provides a useful and intuitive approach to artificially control the emission wavelength of a QD material system.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

We investigated the temperature dependence (10-250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. (C) 2001 American Institute of Physics.

Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

We observe "ghost" islands formed on terraces during homoepitaxial nucleation of GaN. We attribute the ghost islands to intermediate nucleation states, which can be driven into "normal" islands by scanning tunneling microscopy. The formation of ghost islands is related to excess Ga atoms on the surface. The excess Ga also affect island number density: by increasing Ga coverage, the island density first decreases, reaching a minimum at about 1 monolayer (ML) Ga and then increases rapidly for coverages above 1 ML. This nonmonotonic behavior points to a surfactant effect of the Ga atoms.

Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1-x strained layers

A constant amount of Ge was deposited on strained GexSi1-x layers of approximately the same thickness but with different alloy compositions, ranging from x = 0.06 to x = 0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. (C) 2000 American Institute of Physics. [S0003-6951(00)03529-4].

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Mineral provinces and material provenance of the surficial sediments near the Zhongsha Islands in the South China Sea

Characteristics and distribution patterns of elastic minerals (0.063 similar to 0.125 mm) in bottom sediments represent a significant indicator for the identification of the origin of sediment. One hundred and fourteen surface sediment samples, which were collected from the area near the Zhongsha Islands in the South China Sea, were analysed to identify the mineral suites and their distributions in the study area. The area can be divided into three mineral provinces: ( I) a province of biogenic minerals, which mainly originate from the Zhongsha Atoll; ( H) a province of volcanogenic minerals, which are mainly derived from local basaltic seamounts and small-scale volcanoes that are probably erupting, with some influences from the island-are volcanic region around the South China Sea; and (II) a mixed mineral province whose material source includes biogenic minerals, volcanogenic minerals and terrigenous minerals; the last province can be subdivided into a mixed mineral sub-province of the northeastern part of the study area, in which terrigenous minerals are mainly derived from China's Mainland and do not exceed 17 degrees N, and a mixed mineral sub-province of the southeastern part of the study area, in which terrigenous minerals are derived from Kalimantan and Indochina Peninsula and might be further transported into the deep sea basin through submarine canyons.

COASTAL SEA-LEVEL AND THE LARGE-SCALE CLIMATE STATE - A DOWNSCALING EXERCISE FOR THE JAPANESE ISLANDS

A major problem which is envisaged in the course of man-made climate change is sea-level rise. The global aspect of the thermal expansion of the sea water likely is reasonably well simulated by present day climate models; the variation of sea level, due to variations of the regional atmospheric forcing and of the large-scale oceanic circulation, is not adequately simulated by a global climate model because of insufficient spatial resolution. A method to infer the coastal aspects of sea level change is to use a statistical ''downscaling'' strategy: a linear statistical model is built upon a multi-year data set of local sea level data and of large-scale oceanic and/or atmospheric data such as sea-surface temperature or sea-level air-pressure. We apply this idea to sea level along the Japanese coast. The sea level is related to regional and North Pacific sea-surface temperature and sea-level air pressure. Two relevant processes are identified. One process is the local wind set-up of water due to regional low-frequency wind anomalies; the other is a planetary scale atmosphere-ocean interaction which takes place in the eastern North Pacific.

Prevalence of Asthma Symptoms and Associated Factors in Schoolchildren from Brazilian Amazon Islands

Objectives. To determine the prevalence of asthma symptoms among schoolchildren living on two different Brazilian Amazon islands and to identify the risk factors related to this condition. Methods. A cross-sectional study of 400 schoolchildren (5-8 years old) using written questionnaires produced by the International Study of Asthma and Allergies in Childhood, a skin prick test (allergic sensitization), and a stool examination (for helminthic infection). Nonparametric tests were carried out, and the risk factors were identified by logistic regression. Results. the prevalence of active asthma symptoms was markedly higher in children living on Outeiro Island (OI) than those living on Comb Island (CBI) (30.5% and 16.5%, respectively). the logistic regression identified several risk factors of asthma symptoms on CBI: parental history of asthma, night coughing in the past year, and currently have a cat. On OI, the major risk factors were parental history of asthma, personal history of eczema, having two or more older siblings, and night coughing in the past year. the risk factors in common on both the islands were night coughing in the past year and parental history of asthma. Conclusions. the prevalence of asthma symptoms was higher in those with a lifestyle closer to that observed in urban areas (i.e., better sanitation and hygiene), reinforcing the protective effect of a rural environment. Different risk factors were associated with asthma symptoms in schoolchildren living on OI and on CBI. This fact may reflect the environmental individuality and particularities of each island.

Historical sketch of the Hawaiian mission : and the missions to Micronesia and the Marquesas Islands / by S.C. Bartlett.

http://www.archive.org/details/historicalsketch00bartiala

In the wake of the war canoe ; a stirring record of forty years' successful labour, peril & adventure amongst the savage Indian tribes of the Pacific coast, and the piratical headhunting Haidas of the Queen Charlotte Islands, B.C., with an introduction by the Lord Bishop of Derry.

http://www.archive.org/details/inwakeofwarcanoe00collrich

The Hawaiian Islands : their progress and condition under missionary labors / by Rufus Anderson.

http://moa.umdl.umich.edu/cgi/sgml/moa-idx?notisid=ALQ8090