A tungsten complex containing a highly delocalized metal-ligand system

Nucleophilic attack of (triphenylphosphonio) cyclopentadienide on the dichlorodiazomethane-tungsten complex trans[ BrW(dppe)(2)(N2CCl2)]PF6 [dppe is 1,2-bis(diphenylphosphino) ethane] results in C-C bond formation and affords the title compound, trans-[W(C24H18ClN2P)Br(C26H24P2)(2)]PF6 center dot 0.6CH(2)Cl(2). This complex, bis[1,2- bis(diphenylphosphino)ethane] bromido{chloro[3-(triphenylphosphonio) cyclopentadienylidene] diazomethanediido} tungsten hexafluorophosphate dichloromethane 0.6-solvate, contains the previously unknown ligand chloro[3-(triphenylphosphonio) cyclopentadienylidene] diazomethane. Evidence from bond lengths and torsion angles indicates significant through-ligand delocalization of electron density from tungsten to the nominally cationic phosphorus(V) centre. This structural analysis clearly demonstrates that the tungsten-dinitrogen unit is a powerful pi-electron donor with the ability to transfer electron density from the metal to a distant acceptor centre through an extended conjugated ligand system. As a consequence, complexes of this type could have potential applications as nonlinear optical materials and molecular semiconductors.

Physical effects in IR-coating materials

The effects of dispersion, angle of illumination and temperature in coated layers of infrared semiconductors (the IV-VI) and semiinsulators (the II-VI) are described. Examples are given of microcomputer calculations of these.

Monometallic salts derived from complex anions of group 10 metal ions with p-tolylsulfonyldithiocarbimate ligand: Synthesis, characterization and properties

New monometallic complex salts of the form X-2[M(L)(2)] [M = Ni2+, X = (CH3)(2)NH2+(1); M = Ni2+, X = (CH3)(4)N+ (2); M = Ni2+, X = (C2H5)(4)N+(3); M = Ni2+, X = (C3H7)(4)N+(4); M = Ni2+; X = (C6H13)(4)N+) (5); M = Pd2+,X = (CH3)(2)NH2+(6); M = Pd2+, X= (C2H5)(4)N+(7); M = Pd2+, X= (C3H7)(4)N+(8); M = Pd2+, X = (C6H13)(4)N+ (9); M = Pt2+, X = (CH3)(2)NH2+(10); L = p-tolylsulfonyldithiocarbimate (CH3C6H4SO2N=CS22 )] have been prepared and characterized by elemental analysis, IR, H-1 and C-13 NMR and UV-Vis spectroscopy; 1, 3, 4 and 5 by X-ray crystallography. In 1, 3, 4 and 5, the Ni atom is four coordinate with a square planar environment being bonded to four sulfur atoms from two bidentate ligands. All the salts are weakly conducting (sigma(rt) = 10 (7) to 10 (14) Scm (1)) because of the lack of significant S center dot center dot center dot S intermolecular interactions between complex anions [M(L)(2)](2) in the solid state however, they show behavior of semiconductors in the temperature range 353-453 K. All the Pd(II) and Pt(II) salts exhibited phtotolumeniscent emissions near visible region in solution at room temperature.

Thermoelectric properties of BiOCu1-xMxSe (M = Cd and Zn)

Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd2+ and Zn2+, respectively. Substitution of monovalent Cu+ with divalent Cd2+ or Zn2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

Ball milling as an effective route for the preparation of doped bornite: synthesis, stability and thermoelectric properties

Bornite, Cu5FeS4, is a naturally-occuring mineral with an ultralow thermal conductivity and potential for thermoelectric power generation. We describe here a new, easy and scalable route to synthesise bornite, together with the thermoelectric behaviour of manganese-substituted derivatives, Cu5Fe1-xMnxS4 (0 ≤ x ≤ 0.10). The electrical and thermal transport properties of Cu5Fe1-xMnxS4 (0 ≤ x ≤ 0.10), which are p-type semiconductors, were measured from room temperature to 573 K. The stability of bornite was investigated by thermogravimetric analysis under inert and oxidising atmospheres. Repeated measurements of the electrical transport properties confirm that bornite is stable up to 580 K under an inert atmosphere, while heating to 890 K results in rapid degradation. Ball milling leads to a substantial improvement in the thermoelectric figure of merit of unsusbtituted bornite (ZT = 0.55 at 543 K), when compared to bornite prepared by conventional high-temperature synthesis (ZT < 0.3 at 543 K). Manganese-substituted samples have a ZT comparable to that of unsubstituted bornite.

Compositional control of the electrical transport properties in the new series of thiospinels Ga1-xGexV4S8-delta (0 <=x<=1)

A new series of non-stoichiometric sulfides Ga1−xGexV4S8−δ (0≤x≤1; δ≤0.23) has been synthesized at high temperatures by heating stoichiometric mixtures of the elements in sealed quartz tubes. The samples have been characterized by powder X-ray diffraction, SQUID magnetometry and electrical transport-property measurements. Structural analysis reveals that a solid solution is formed throughout this composition range, whilst thermogravimetric data reveal sulfur deficiency of up to 2.9% in the quaternary phases. Magnetic measurements suggest that the ferromagnetic behavior of the end-member phase GaV4S8 is retained at x≤0.7; samples in this composition range showing a marked increase in magnetization at low temperatures. By contrast Ga0.25Ge0.75V4S8−δ appears to undergo antiferromagnetic ordering at ca. 15 K. All materials with x≠1 are n-type semiconductors whose resistivity falls by almost six orders of magnitude with decreasing Ga content, whilst the end-member phase GeV4S8−δ is a p-type semiconductor. The results demonstrate that the physical properties are determined principally by the degree of electron filling of narrow-band states arising from intracluster V–V interactions.

Synthesis and characterisation of the anion-ordered tellurides MGeTe (M = Co, Rh)

The synthesis and structural characterisation, carried out using a combination of single-crystal and powder X-ray diffraction, of the materials MGeTe (M = Co, Rh) are described. These phases adopt an ordered α-NiAs2 structure, which can be considered intermediate between those of pyrite and marcasite. Electrical resistivity and Seebeck coefficient measurements, carried out over the temperature range 77 ≤ T/K ≤ 325, indicate that these materials are n-type semiconductors.

Structure and electrical transport properties of the ordered skutterudites MGe1.5S1.5 (M = Co, Rh, Ir)

High-resolution powder neutron diffraction data collected for the skutterudites MGe1.5S1.5 (M=Co, Rh, Ir) reveal that these materials adopt an ordered skutterudite structure (space group R3¯), in which the anions are ordered in layers perpendicular to the [111] direction. In this ordered structure, the anions form two-crystallographically distinct four-membered rings, with stoichiometry Ge2S2, in which the Ge and S atoms are trans to each other. The transport properties of these materials, which are p-type semiconductors, are discussed in the light of the structural results. The effect of iron substitution in CoGe1.5S1.5 has been investigated. While doping of CoGe1.5S1.5 has a marked effect on both the electrical resistivity and the Seebeck coefficient, these ternary skutterudites exhibit significantly higher electrical resistivities than their binary counterparts.

The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/Al(x)Ga(1-x)As quantum wells

We determined by means of photoluminescence measurements the dependence on temperature of the transition energy of excitons in GaAs/Al(x)Ga(1-x)As quantum wells with different alloy concentrations (with different barrier heights). Using a fitting procedure, we determined the parameters which describe the behavior of the excitonic transition energy as a function of temperature according to three different theoretical models. We verified that the temperature dependence of the excitonic transition energy does not only depend on the GaAs material but also depends on the barrier material, i.e. on the alloy composition. The effect of confinement on the temperature dependence of the excitonic transition is discussed.

SiO(2) in density functional theory and beyond

We present the first-principle electronic structure calculation on an amorphous material including many-body corrections within the GW approximation. We show that the inclusion of the local field effects in the exchange-correlation potential is crucial to quantitatively describe amorphous systems and defect states. We show that the mobility gap of amorphous silica coincides with the band gap of quartz, contrary to the traditional picture and the densityfunctional theory results. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Driving forces for the adsorption of cyclopentene on InP(001)

In this work the interaction of cyclopentene with a set of InP(001) surfaces is investigated by means of the density functional theory. We propose a simple approach for evaluating the surface strain and based on it we have found a linear relation between bond and strain energies and the adsorption energy. Our results also indicate that the higher the bond energy, the more disperse the charge distribution is around the adsorption site associated to the high occupied state, a key feature that characterizes the adsorption process. Different adsorption coverages are used to evaluate the proposed equation. Our results suggest that the proposed approach might be extended to other systems where the interaction of the semiconductor surface and the molecule is restricted to first neighbor sites. (C) 2011 Elsevier B.V. All rights reserved.

First-principles calculation of the AlAs/GaAs interface band structure using a self-energy-corrected local density approximation

We apply a self-energy-corrected local density approximation (LDA) to obtain corrected bulk band gaps and to study the band offsets of AlAs grown on GaAs (AlAs/GaAs). We also investigate the Al(x)Ga(1-x)As/GaAs alloy interface, commonly employed in band gap engineering. The calculations are fully ab initio, with no adjustable parameters or experimental input, and at a computational cost comparable to traditional LDA. Our results are in good agreement with experimental values and other theoretical studies. Copyright (C) EPLA, 2011

Crystal growth and magnetic properties of tin selenide-doped europium Sn(1-x)Eu(x)Se

The growth and magnetic properties of Tin Selenide (SnSe) doped with Eu(2+) Sn(1-x)Eu(x)Se (x=2.5%) were investigated. Q-band (34 GHz) electron paramagnetic resonance measurements show that the site symmetry of Eu(2+) at 4.2 K is orthorhombic and the Lande factor was determined to be g=1.99 +/- 0.01. The exchange coupling between nearest-neighbor (NN) Eu(2+) ions was estimated from magnetization and magnetic-susceptibility measurements using a model that takes into account the magnetic contributions of single ions, pairs and triplets. The exchange interaction between Eu(2+) nearest neighbors was found to be antiferromagnetic with an estimated average value of J(p)/k(B) =-0.18 +/- 0.03 K. (C) 2009 Elsevier B.V. All rights reserved.

IxV Curves of Boron and Nitrogen Doping Zigzag Graphene Nanoribbons

We investigate the transport properties (IxV curves and zero bias transmittance) of pristine graphene nanoribbons (GNRs) as well as doped with boron and nitrogen using an approach that combines nonequilibrium Green`s functions and density functional theory (DFT) [NEGF-DFT]. Even for a pristine nanoribbon we verify a spin-filter effect under finite bias voltage when the leads have an antiparallel magnetization. The presence of the impurities at the edges of monohydrogenated zigzag GNRs changes dramatically the charge transport properties inducing a spin-polarized conductance. The IxV curves for these systems show that depending on the bias voltage the spin polarization can be inverted. (C) 2010 Wiley Periodicals, Inc. Int J Quantum Chem 111: 1379-1386, 2011

Effects of Side-Chain and Electron Exchange Correlation on the Band Structure of Perylene Diimide Liquid Crystals: A Density Functional Study

The structural and electronic properties of perylene diimide liquid crystal PPEEB are studied using ab initio methods based on the density functional theory (I)FT). Using available experimental crystallographic data as a guide, we propose a detailed structural model for the packing of solid PPEEB. We find that due to the localized nature of the band edge wave function, theoretical approaches beyond the standard method, such as hybrid functional (PBE0), are required to correctly characterize the band structure of this material. Moreover, unlike previous assumptions, we observe the formation of hydrogen bonds between the side chains of different molecules, which leads to a dispersion of the energy levels. This result indicates that the side chains of the molecular crystal not only are responsible for its structural conformation but also can be used for tuning the electronic and optical properties of these materials.