998 resultados para QI


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Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.

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The effects of electron-phonon interaction oil energy levels of a. polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-space LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron hi a wurtzite nitride PQW are greater than that in all AlGaAs PQW. This indicates that the electron-phonon interaction in a wurtzite nitride PQW is not negligible.

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A hierarchical equations of motion formalism for a quantum dissipation system in a grand canonical bath ensemble surrounding is constructed on the basis of the calculus-on-path-integral algorithm, together with the parametrization of arbitrary non-Markovian bath that satisfies fluctuation-dissipation theorem. The influence functionals for both the fermion or boson bath interaction are found to be of the same path integral expression as the canonical bath, assuming they all satisfy the Gaussian statistics. However, the equation of motion formalism is different due to the fluctuation-dissipation theories that are distinct and used explicitly. The implications of the present work to quantum transport through molecular wires and electron transfer in complex molecular systems are discussed. (c) 2007 American Institute of Physics.

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In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master equation with the well-known time-dependent density functional theory. The key ingredients of this paper include (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e., the device); and (iii) the construction of Kohn-Sham master equations for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOMs) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along with the propagation of the Kohn-Sham master equation and the EOMs of the auxiliary functions.

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We report the low threshold current density operation of strain-compensated In0.64Ga0.36As/In0.38Al0.62As quantum cascade lasers emitting near 4.94 mu m. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57 kA/cm(2) at 80K is achieved for an uncoated 20-mu m-wide and 2.5-mm-long laser.

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We present a detailed study of lambda similar to 9.75 mu m GaAs/AIGaAs quantum cascade lasers. For a coated 2-mm-long and 40-mu m-wide laser, an optical power of 85 mu W is observed 95% duty cycle at 80 K. At a moderate driving pulse (1 kHz and 1% duty cycle), the device presents a peak power more than 20 mW even at 120 K. At 80 K, the fitted result of threshold current densities shows evidence of potential cw operation.

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Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. the off-resonant third-order nonlinear susceptibility chi((3)) is observed to be 1.3 x 10(-10) esu at 800 nm. The relaxation time of the film is fast as short as 50 fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.

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The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and two-dimensional plane wave expansion method. The variations of waveguide-mode edges with structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constrant, r/Lambda, is fixed and the lattice constant of photonic crystal, Lambda, increases, the waveguide-mode edges shift to longer wavelengths. When Lambda is fixed and r/Lambda increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Lambda and Lambda are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

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A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3 mu m with a silicon-on-insulator (Sol) substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the F-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3 mu m, hence the incident light at wavelength 1.3 mu m will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540mn. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.

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By viewing the non-equilibrium transport setup as a quantum open system, we propose a reduced-density-matrix based quantum transport formalism. At the level of self-consistent Born approximation, it can precisely account for the correlation between tunneling and the system internal many-body interaction, leading to certain novel behavior such as the non-equilibrium Kondo effect. It also opens a new way to construct time-dependent density functional theory for transport through large-scale complex systems. (c) 2006 Elsevier B.V. All rights reserved.

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The mechanism of hole charge transfer in DNA of various lengths and sequences is investigated based on a partially coherent tunneling theory (Zhang et al., J Chem Phys 117:4578, 2002), where the effects of phase-breaking in adenine-thymine and guanine-cytosine base pairs are treated on equal foot. This work aims at providing a self-consistent microscopic interpretation for rate experiments on various DNA systems. We will also clarify the condition under which the simple superexchange-mediated-hopping picture is valid, and make some comments on the further development of present theory.

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Intense room-temperature near infrared (NIR) photoluminescence (980 nm and 1032 nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the F-2(5/2) and F-2(7/2) levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence exitation sprectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminscence of rare-earth ions in SiO2 is very effective.

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The optical manipulation of electron spins is of great benefit to solid-state quantum information processing. In this letter, we provide a comparative study on the ultrafast optical manipulation of single electron spin in the doped and undoped quantum dots. The study indicates that the experimental breakthrough can be preliminarily made in the undoped quantum dots, because of the relatively less demand.

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We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 mu m above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 mu m respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density J(th) = 2.6 kA/cm(2) gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.

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Closely related to the quantum information processing in solid states, we study the quantum measurement of single electron state by a mesoscopic charge-sensitive detector, namely the quantum point contact (QPC). We find that the conventional Lindblad-type master equation is not appropriate for describing the underlying measurement dynamics. The treatment developed in this work properly accounts for the energy-exchange between the detector and the measured system, and its role on the detailed-balance relation. A valid description for the QPC measurement dynamics is provided which may have impact on the study of quantum measurement and quantum feedback control in solid states.