911 resultados para Ion current density
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In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.
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This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (VON) of 2 V at 300 Acm2. The latch-up current density is 1100 Acm2. The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in VON. The latest design shows a latch-up current density of 1195 A cm2. The enhanced robustness against static latch-up leads to a better forward bias safe operating area. © 1963-2012 IEEE.
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Several experimental techniques have been used in order to characterize the properties of multifilamentary Bi-2223 / Ag tapes. Pristine samples were investigated by electrical resistivity, current-voltage characteristics and DC magnetic moment measurements. Much emphasis is placed on comparing transport (direct) and magnetic (indirect) methods for determining the critical current density as well as the irreversibility line and resolving usual lacks of consistency due to the difference in measurement techniques and data analysis. The effect of an applied magnetic field, with various strengths and directions, is also studied and discussed. Next, the same combination of experiments was performed on bent tapes in order to bring out relevant information regarding the intergranular coupling. A modified Brandt model taking into account different types of defects within the superconducting filaments is proposed to reconciliate magnetic and transport data.
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We study the magnetic shielding properties of hybrid ferromagnetic/ superconductor (F/S) structures consisting of two coaxial cylinders, with one of each material. We use an axisymmetric finite-element model in which the electrical properties of the superconducting tube are modeled by a nonlinear E-J power law with a magnetic-field-dependent critical current density whereas the magnetic properties of the ferromagnetic material take saturation into account. We study and compare the penetration of a uniform axial magnetic field in two cases: 1) a ferromagnetic tube placed inside a larger superconducting tube (Ferro-In configuration) and 2) a ferromagnetic tube placed outside the superconducting one (Ferro-Out configuration). In both cases, we assess how the ferromagnetic tube improves the shielding properties of the sole superconducting tube. The influence of the geometrical parameters of the ferromagnetic tube is also studied: It is shown that, upon an optimal choice of the geometrical parameters, the range of magnetic fields that are efficiently shielded by the high-temperature superconductor tube alone can be increased by a factor of up to 7 (2) in a Ferro-Out (Ferro-In) configuration. The optimal configuration uses a 1020 carbon steel with a thickness of 2 mm and a height that is half that of the superconducting cylinder (80 mm). © 2009 IEEE.
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Magnetic shielding efficiency was measured on high- Tc superconducting hollow cylinders subjected to either an axial or a transverse magnetic field in a large range of field sweep rates, dBapp/dt. The behaviour of the superconductor was modelled in order to reproduce the main features of the field penetration curves by using a minimum number of free parameters suitable for both magnetic field orientations. The field penetration measurements were carried out on Pb-doped Bi-2223 tubes at 77K by applying linearly increasing magnetic fields with a constant sweep rate ranging between 10νTs-1 and 10mTs-1 for both directions of the applied magnetic field. The experimental curves of the internal field versus the applied field, Bin(Bapp), show that, at a given sweep rate, the magnetic field for which the penetration occurs, Blim, is lower for the transverse configuration than for the axial configuration. A power law dependence with large exponent, n′, is found between Blim and dBapp/dt. The values of n′ are nearly the same for both configurations. We show that the main features of the curves B in(Bapp) can be reproduced using a simple 2D model, based on the method of Brandt, involving a E(J) power law with an n-exponent and a field-dependent critical current density, Jc(B), (following the Kim model: Jc = Jc0(1+B/B1)-1). In particular, a linear relationship between the measured n′-exponents and the n-exponent of the E(J) power law is suggested by taking into account the field dependence of the critical current density. Differences between the axial and the transverse shielding properties can be simply attributed to demagnetizing fields. © 2009 IOP Publishing Ltd.
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High temperature superconducting (HTS) synchronous motors can offer significant weight and size reductions, as well as improved efficiency, over conventional copper-wound machines due to the higher current density of high temperature superconducting (HTS) materials. In order to optimise the design parameters and performance of such a machine, this paper proposes a basic physical model of an air-cored HTS synchronous motor with a copper armature winding and HTS field winding. An analytical method for the field analysis in the synchronous motor is then presented, followed by a numerical finite element analysis (FEA) model to verify the analytical solution. The model is utilised to study the influence of the geometry of the HTS coils on the magnetic field at the armature winding, and geometrical parameter optimisation is carried out using this theoretical model to obtain a more sinusoidal magnetic field at the armature, which has a major influence on the performance of the motor.
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A good quality graphene is transferred onto honeycomb-like CNTs arrays with inner supporting CNTs. The efficient field emission is demonstrated due to a high aspect ratio protrusions and graphene crack edges. A high efficient current density about 1.2 mA/cm2 at threshold electric field of 7.8 V/μm with a turn-on electric field of 1.8 V/μm at the current density of 10 μA/cm2 is observed due to high localized electric field. Stable field emission is tested in a vacuum chamber. The results are of significance to the development of Graphene based field emitters. © 2013 IEEE.
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The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm 2) when operated at a current density of 20 A/cm2. © 2013 AIP Publishing LLC.
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We studied the magnetisation of a 2 in. diameter YBCO thin film in the presence of traveling magnetic waves with six hall sensors. Simulation based on finite element method was conducted to reproduce the process of magnetisation. We discovered that the magnetisation of YBCO thin film based on traveling waves does not follow the constant current density assumption as used in the standing wave condition. We have shown that the traveling wave is more efficient in transporting the flux into the YBCO thin film, which suggests the potential of a flux injection device for high temperature superconducting coils. © 2014 AIP Publishing LLC.
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© 2013 IEEE. The world's first bulk-type fully high temperature superconducting synchronous motor (HTS-SM) was assembled and tested in our laboratory at the University of Cambridge. The fully HTS-SM was designed with 75 Y123 HTS bulks mounted on the surface of the rotor and six air core 2G HTS racetrack coils used for stator windings. We successfully applied a light fan load test for this fully HTS-SM at its operating temperature of 77 K. The detected decay of the trapped magnetic flux densities at the centre of the HTS bulks was up to 16.5% after 5 h of synchronous rotation. Due to the high current density of the HTS material, the ac stator field for the 2G HTS winding was 49.2% stronger compared with a comparable copper winding. In the meantime, we estimated that the efficiency was about 86% potentially under stable low frequency rotation at 150 r/min. The results show that the performance of this HTS motor is acceptable for practical applications.
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The development of long-length, high current density Bi2Sr 2CaCu2Ox wires and (RE)Ba2Cu 3Oy coated conductors has now advanced such that superconducting magnets for energy applications and high field applications are progressing rapidly. Europe, along with China, Korea the US and Japan is an important player in the development and exploitation of High Temperature Superconductors in practical applications. © 2013 IEEE.
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Boron nitride nanotubes (BNNTs) are considered as a promising cold electron emission material owing to their negative electron affinity. BNNT field emitters show excellent oxidation endurance after high temperature thermal annealing of 600 °C in air ambient. There is no damage to the BNNTs after thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. The thermally annealed BNNTs exhibit a high maximum emission current density of 8.39mA/cm2 and show very robust emission stability. The BNNTs can be a promising emitter material for field emission devices under harsh oxygen environments. © 2014 AIP Publishing LLC.
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We compare the performance of a typical hole transport layer for organic photovoltaics (OPVs), Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) thin film with a series of PEDOT:PSS layers doped with silver (Ag) nanoparticles (NPs) of various size distributions. These hybrid layers have attracted great attention as buffer layers in plasmonic OPVs, although there is no report up to date on their isolated performance. In the present study we prepared a series of PEDOT:PSS layers sandwiched between indium tin oxide (ITO) and gold (Au) electrodes. Ag NPs were deposited on top of the ITO by electron beam evaporation followed by spin coating of PEDOT:PSS. Electrical characterization performed in the dark showed linear resistive behavior for all the samples; lower resistance was observed for the hybrid ones. It was found that the resistivity of the samples decreases with increasing the particle's size. A substantial increase of the electric field between the ITO and the Au electrodes was seen through the formation of current paths through the Ag NPs. A striking observation is the slight increase in the slope of the current density versus voltage curves when measured under illumination for the case of the plasmonic layers, indicating that changes in the electric field in the vicinity of the NP due to plasmonic excitation is a non-vanishing factor. © 2014 Published by Elsevier B.V. All rights reserved.
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The properties of Rashba wave function in the planar one-dimensional waveguide are studied, and the following results are obtained. Due to the Rashba effect, the plane waves of electron with the energy E divide into two kinds of waves with the wave vectors k(1)=k(0)+k(delta) and k(2)=k(0)-k(delta), where k(delta) is proportional to the Rashba coefficient, and their spin orientations are +pi/2 (spin up) and -pi/2 (spin down) with respect to the circuit, respectively. If there is gate or ferromagnetic contact in the circuit, the Rashba wave function becomes standing wave form exp(+/- ik(delta)l)sin[k(0)(l-L)], where L is the position coordinate of the gate or contact. Unlike the electron without considering the spin, the phase of the Rashba plane or standing wave function depends on the direction angle theta of the circuit. The travel velocity of the Rashba waves with the wave vector k(1) or k(2) are the same hk(0)/m*. The boundary conditions of the Rashba wave functions at the intersection of circuits are given from the continuity of wave functions and the conservation of current density. Using the boundary conditions of Rashba wave functions we study the transmission and reflection probabilities of Rashba electron moving in several structures, and find the interference effects of the two Rashba waves with different wave vectors caused by ferromagnetic contact or the gate. Lastly we derive the general theory of multiple branches structure. The theory can be used to design various spin polarized devices.
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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.