932 resultados para HYPERON POLARIZATION
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RESUMO: Angola tem sido ao longo dos tempos objecto de cobiça por parte de países estrangeiros por motivações diversas, que foram desde interesses coloniais – como aconteceu com Portugal, que durante séculos a colonizou, e da Holanda, que dominou Luanda entre 1641 e 1648 – ou por interesses hegemónicos, ideológicos e políticos – como sucedeu com os EUA e a URSS, mas também com a Republica Popular da China e Cuba – e até por interesses regionais – como foram os casos da África do Sul e dos contíguos Congo Belga, hoje Republica Democrática do Congo, e Zâmbia. No entanto, a todos estes interesses diversos não se pode excluir um que lhes é transversal: o interesse económico. De facto, os 1246700 km² de que Angola dispõe, aliados à sua excelente localização geográfica com uma extensa costa atlântica e a sua extraordinária riqueza em recursos naturais podem explicar este envolvimento estrangeiro na História de Angola. No que diz respeito ao objecto da Dissertação, o envolvimento da ONU nas questões relacionadas com Angola remonta à década de 50, ou seja, ao período colonial e muito antes da independência do país em 1975, devido à política descolonizadora saída da II Guerra Mundial. Além disso, a dinâmica que emergiu da II Guerra Mundial, rapidamente, reconfigurou o panorama político internacional em dois blocos: o ocidental liderado pelos EUA e o de Leste liderado pela URSS, que se envolveram numa Guerra Fria, polarização cujos efeitos se ligam de forma trágica à guerra em Angola, primeiro para a autodeterminação, e, depois, já num contexto de independência, num conflito armado que ultrapassou o plano interno. Os interesses dos EUA e da URSS, que começaram por ser antagónicos, deram lugar em 1989 com o fim da bipolaridade a uma cooperação mais aberta e uma abertura política em Angola rumo à paz e ao início da construção da democracia. Neste trabalho estuda-se o papel da ONU em Angola, quer no período de luta pela independência, quer depois, na busca da paz no sangrento conflito – nem sempre civil – que mesmo antes da data da independência, a 11 de Novembro de 1975, e até Fevereiro de 2002, dilacerou o país. Procura-se, igualmente, analisar o contributo da ONU na consolidação das instituições e na construção de um regime democrático em Angola. ABSTRACT: Angola has been along time subject to the greed of several foreign countries for many reasons and motivations which go from colonial interests - that is the cases of, Portugal which for centuries colonized it, and Netherlands under whose administration had been Luanda between 1641 and 1648 - or for hegemonic, ideological and political interests - as it happened in regard to USA and USSR, but also People‟s Republic of China, Cuba, - and even for regional interests - regarding South Africa Republic, and the neighbouring countries, Democratic Republic of Congo (ancient Republic of the Congo “Leopoldville”), and the Republic of Zambia. On the other hand to these interests we may join another which is transversal to all of them: economic interest. Effectively, Angola‟s 481,351 square miles (1,246,700 Km2) estimated area, combined with its excellent geographical location with a lengthy Atlantic coast, its extraordinary richness in natural resources may well explain this foreign participation in its Political History. Concerning the objective of this work, the UN has been involved in matters regarding Angola since the decade of 50 of the last century, during the colonial period, long before the independence of the country in 1975, due to the decolonization policy emerged from the Second World War. Furthermore, after the Second World War, international environment has changed, transforming quickly the world into two main blocs, the West with the leadership of the USA and the East with the leadership of USSR which went into a Cold War. The effects of this polarization reached tragically Angola, early in the fight for self-determination, and went on later after independence in an armed conflict, which has overcome the internal dimension. The USA and USSR interests, at the beginning being antagonistic had become by 1989, with the end of bipolarity, more cooperative, leading Angola to a political reform towards peace and beginning the construction of democracy. In this academic work it‟s studied the UNO role in Angola since the fight for self-determination early in the sixties of last century, and later in the search for peace during the bloody - and not always civil – war conflict which very before independence date in 11th November 1975, and as long as 2002, divided the country. Additionally, this work aims to understand the UNO contribution to consolidate institutions and to promote democracy in Angola.
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Este trabalho utiliza uma estrutura pin empilhada, baseada numa liga de siliceto de carbono amorfo hidrogenado (a-Si:H e/ou a-SiC:H), que funciona como filtro óptico na zona visível do espectro electromagnético. Pretende-se utilizar este dispositivo para realizar a demultiplexagem de sinais ópticos e desenvolver um algoritmo que permita fazer o reconhecimento autónomo do sinal transmitido em cada canal. O objectivo desta tese visa implementar um algoritmo que permita o reconhecimento autónomo da informação transmitida por cada canal através da leitura da fotocorrente fornecida pelo dispositivo. O tema deste trabalho resulta das conclusões de trabalhos anteriores, em que este dispositivo e outros de configuração idêntica foram analisados, de forma a explorar a sua utilização na implementação da tecnologia WDM. Neste trabalho foram utilizados três canais de transmissão (Azul – 470 nm, Verde – 525 nm e Vermelho – 626 nm) e vários tipos de radiação de fundo. Foram realizadas medidas da resposta espectral e da resposta temporal da fotocorrente do dispositivo, em diferentes condições experimentais. Variou-se o comprimento de onda do canal e o comprimento de onda do fundo aplicado, mantendo-se constante a intensidade do canal e a frequência de transmissão. Os resultados obtidos permitiram aferir sobre a influência da presença da radiação de fundo e da tensão aplicada ao dispositivo, usando diferentes sequências de dados transmitidos nos vários canais. Verificou-se, que sob polarização inversa, a radiação de fundo vermelho amplifica os valores de fotocorrente do canal azul e a radiação de fundo azul amplifica o canal vermelho e verde. Para polarização directa, apenas a radiação de fundo azul amplifica os valores de fotocorrente do canal vermelho. Enquanto para ambas as polarizações, a radiação de fundo verde, não tem uma grande influência nos restantes canais. Foram implementados dois algoritmos para proceder ao reconhecimento da informação de cada canal. Na primeira abordagem usou-se a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa e directa. Pela comparação das duas medidas desenvolveu-se e testou-se um algoritmo que permite o reconhecimento dos canais individuais. Numa segunda abordagem procedeu-se ao reconhecimento da informação de cada canal mas com aplicação de radiação de fundo, tendo-se usado a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa sem aplicação de radiação de fundo com a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa com aplicação de radiação de fundo. Pela comparação destas duas medidas desenvolveu-se e testou-se o segundo algoritmo que permite o reconhecimento dos canais individuais com base na aplicação de radiação de fundo.
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The scaling exponent of 1.6 between anomalous Hall and longitudinal conductivity, characteristic of the universal Hall mechanism in dirty-metal ferromagnets, emerges from a series of CrO2 films as we systematically increase structural disorder. Magnetic disorder in CrO2 increases with temperature and this drives a separate topological Hall mechanism. We find that these terms are controlled discretely by structural and magnetic defect populations, and their coexistence leads to apparent divergence from exponent 1.6, suggesting that the universal term is more prevalent than previously realized.
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The deposition of highly oriented a-axis CrO(2) films onto Al(2)O(3)(0001) by atmospheric pressure (AP)CVD at temperatures as low as 330 C is reported. Deposition rates strongly depend on the substrate temperature, whereas for film surface microstructures the dependence is mainly on film thickness. For the experimental conditions used in this work, CrO(2) growth kinetics are dominated by a surface reaction mechanism with an apparent activation energy of (121.0 +/- 4.3) kJ mol(-1). The magnitude and temperature dependence of the saturation magnetization, up to room temperature, is consistent with bulk measurements.
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This work reports on the synthesis of CrO2 thin films by atmospheric pressure CVD using chromium trioxide (CrO3) and oxygen. Highly oriented (100) CrO2 films containing highly oriented (0001) Cr2O3 were grown onto Al2O3(0001) substrates. Films display a sharp magnetic transition at 375 K and a saturation magnetization of 1.92 mu(B)/f.u., close to the bulk value of 2 mu(B)/f.u. for the CrO2.
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In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 degrees C, and oxygen carrier gas flow rates of 50-500 seem, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures as low as 330 degrees C i.e., 60-70 degrees C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 degrees C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.
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Chromium oxides, CrxOy, are of great interest due to the wide variety of their technological applications. Among them, CrO2 has been extensively investigated in recent years because it is an attractive compound for use in spintronic heterostructures. However, its synthesis at low temperatures has been a difficult task due to the metastable nature of this oxide. This is indeed essential to ensure interface quality and the ability to coat thermal-sensitive materials such as those envisaged in spintronic devices. Pulsed Laser Deposition (PLD) is a technique that has the potential to meet the requirements stated above. In this work, we describe our efforts to grow chromium oxide thin films by PLD from Cr8O21 targets, using a KrF excimer laser. The as-deposited films were investigated by X-ray diffraction and Rutherford backscattering spectrometry. Structural and chemical composition studies showed that the films consist of a mixture of amorphous chromium oxides exhibiting different stoichiometries depending on the processing parameters, where nanocrystals of mainly Cr2O3 are dispersed. The analyses do not exclude the possibility of co-deposition of Cr2O3 and a low fraction of CrO2.
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Laser-assisted chemical vapour deposition (LCVD) has been extensively studied in the last two decades. A vast range of applications encompass various areas such as microelectronics, micromechanics, microelectromechanics and integrated optics, and a variety of metals, semiconductors and insulators have been grown by LCVD. In this article, we review briefly the LCVD process and present two case studies of thin film deposition related to laser thermal excitation (e.g., boron carbide) and non-thermal excitation (e.g., CrO(2)) of the gas phase.
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This work reports on the synthesis of chromium oxide thin films prepared by photodissociation of Cr(CO)(6) in an oxidizing atmosphere, using a pulsed UV laser (KrF, lambda = 248 nm). The experimental conditions, which should enable the synthesis of CrO2, are discussed and results on the deposition of CrxOy films on Al2O3 (0001) substrates are presented.
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This work reports on the synthesis of chromium (III, IV) oxides films by KrF laser-assisted CVD. Films were deposited onto sapphire substrates at room temperature by the photodissociation of Cr(CO)(6) in dynamic atmospheres containing oxygen and argon. A study of the processing parameters has shown that partial pressure ratio Of O-2 to Cr(CO)(6) and laser fluence are the prominent parameters that have to be accurately controlled in order to co-deposit both the crystalline oxide phases. Films consistent with such a two-phase system were synthesised for a laser fluence of 75 mJ cm(-2) and a partial pressure ratio of about 1. (c) 2005 Elsevier B.V. All rights reserved.
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Dedicated Short Range Communications (DSRC) is the key enabling technology for the present and future vehicular communication for various applications, such as safety improvement and traffic jam mitigation. This paper describes the development of a microstrip antenna array for the roadside equipment of a DSRC system, whose characteristics are according with the vehicular communications standards. The proposed antenna, with circular polarization, has a wide bandwidth, enough to cover the current European DSRC 5.8 GHz band and the future 5.9 GHz band for next generation DSRC communications. (C) 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53: 2794-2796, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26394
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A análise que tem vindo a ser efectuada, paralelamente a experiências diversas de implementação de registos de dados pessoais de utentes das unidades de saúde, em particular no que concerne à protecção da privacidade, enquanto valor intrínseco à pessoa humana, encontra novos contornos face ao recente trabalho realizado no âmbito da Administração Central dos Sistemas de Saúde para a implementação do “Registo de Saúde Electrónico”. Este trabalho pretende analisar a bipolarização de interesses em questão. Por um lado o interesse público de adopção de um sistema de informação único, por outro lado a necessária protecção à privacidade do ser humano.
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Optical fiber microwires (OFMs) are nonlinear optical waveguides that support several spatial modes. The multimodal generalized nonlinear Schrodinger equation (MM-GNLSE) is deduced taking into account the linear and nonlinear modal coupling. A detailed theoretical description of four-wave mixing (FWM) considering the modal coupling is developed. Both, the intramode and the intermode phase-matching conditions is calculated for an optical microwire in a strong guiding regime. Finally, the FWM dynamics is studied and the amplitude evolution of the pump beams, the signal and the idler are analyzed.
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Following work on tantalum and chromium implanted flat M50 steel substrates, this work reports on the electrochemical behaviour of M50 steel implanted with tantalum and chromium and the effect of the angle of incidence. Proposed optimum doses for resistance to chloride attack were based on the interpretation of results obtained during long-term and accelerated electrochemical testing. After dose optimization from the corrosion viewpoint, substrates were implanted at different angles of incidence (15°, 30°, 45°, 60°, 75°, 90°) and their susceptibility to localized corrosion assessed using open-circuit measurements, step by step polarization and cyclic voltammetry at several scan rates (5–50 mV s-1). Results showed, for tantalum implanted samples, an ennoblement of the pitting potential of approximately 0.5 V for an angle of incidence of 90°. A retained dose of 5 × 1016 atoms cm-2 was found by depth profiling with Rutherford backscattering spectrometry. The retained dose decreases rapidly with angle of incidence. The breakdown potential varies roughly linearly with the angle of incidence up to 30° falling fast to reach -0.1 V (vs. a saturated calomel electrode (SCE)) for 15°. Chromium was found to behave differently. Maximum corrosion resistance was found for angles of 45°–60° according to current densities and breakdown potentials. Cr+ depth profiles ((p,γ) resonance broadening method), showed that retained doses up to an angle of 60° did not change much from the implanted dose at 90°, 2 × 1017 Cr atoms cm-2. The retained implantation dose for tantalum and chromium was found to follow a (cos θ)8/3 dependence where θ is the angle between the sample normal and the beam direction.
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Electrónica e Telecomunicações