CVD of CrO(2): Towards a lower temperature deposition process


Autoria(s): Sousa, Pedro M.; Dias, Sonia A.; Silvestre, A. J.; Conde, Olinda; Morris, Benjamin; Yates, Karen A.; Branford, William R.; Cohen, Lesley F.
Data(s)

10/09/2012

10/09/2012

01/12/2006

Resumo

The deposition of highly oriented a-axis CrO(2) films onto Al(2)O(3)(0001) by atmospheric pressure (AP)CVD at temperatures as low as 330 C is reported. Deposition rates strongly depend on the substrate temperature, whereas for film surface microstructures the dependence is mainly on film thickness. For the experimental conditions used in this work, CrO(2) growth kinetics are dominated by a surface reaction mechanism with an apparent activation energy of (121.0 +/- 4.3) kJ mol(-1). The magnitude and temperature dependence of the saturation magnetization, up to room temperature, is consistent with bulk measurements.

Identificador

Sousa Pedro M, Dias Sonia A, Silvestre A J, Conde Olinda, Morris Benjamin, Yates Karen, Branford William R, Cohen Lesley F. CVD of CrO(2): Towards a lower temperature deposition process. Chemical Vapor Deposition. 2006: 12 (12).

0948-1907

http://hdl.handle.net/10400.21/1757

Idioma(s)

eng

Publicador

Wiley-Blackwell

Direitos

restrictedAccess

Palavras-Chave #Chemical-Vapor-Deposition #Half-Metallic CRO2 #Oxide Thin-Films #Spin Polarization #Andreev Reflection #Epitaxial-Growth #Point-Contact #Magnetoresistance #Transition
Tipo

article