吡唑啉衍生物有机电致发光器件中激基复合物的发射

以两种吡唑啉衍生物为空穴传输材料(HTM)和BBOT为电子传输材料组成双层器件，获得了相对于组成材料的荧光光谱红移和宽化的电致发光．双层器件和HTM：BBOT等摩尔混蒸薄膜的光致发光及电致发光测量表明，该谱带来自HTM／BBOT界面激基复合物的发射，根据器件的能级图，激基复合物的类型为BBOT的激发态BBOT^

Avaliação de aditivos para remoção catalítica de SOx em unidades de fcc

Os óxidos de enxofre (SOx) são um dos maiores poluentes atmosféricos e um dos precursores da chuva ácida. Um levantamento feito na Petrobrás mostrou que cerca de 17% dos SOx emitidos numa refinaria são oriundos do processo de FCC. Com o avanço dos controles ambientais, traduzido numa legislação mais restritiva, a técnica de incorporação de aditivos para remoção de SOx em UFCCs apresenta-se como a alternativa de menor custo frente outras tecnologias de abate das emissões de SOx. No presente trabalho, foram estudados aditivos constituídos por compostos derivados de hidrotalcitas com a substituição parcial do magnésio e do alumínio por cobre e/ou manganês, sendo estes impregnados ou não por dióxido de cério. Estes aditivos foram submetidos a testes de desempenho em uma unidade multi-propósito acoplada a um micro-GC/TCD. Em todos os testes, a corrente gasosa para a etapa de adsorção oxidativa foi de 1700 ppm de SO2 e 1,5% O2 em He e, para a etapa de regeneração, 30% H2/He. No primeiro conjunto de testes, realizou-se uma adsorção a 720C de 10 min e regeneração com um patamar a 530C, seguido de um TPR até 800C. Observou-se que as amostras impregnadas com cério apresentaram o melhor desempenho na remoção de SO2, indicando que o cério pode ter um papel de promotor da oxidação de SO2 a SO3. Os resultados do TPR mostram que as amostras com cério e com manganês parecem apresentar menores temperaturas de redução dos sulfatos, apesar das maiores liberações de H2S serem identificadas nas amostras com cobre. No segundo conjunto de testes, a adsorção foi a 720C durante 35 min e a regeneração a 650C por 5 minutos em um patamar de 5 minutos, seguida de um TPR até 800C. Para os tempos de sulfatação curtos (5 e 10 min), os resultados confirmaram o efeito positivo que a incorporação de CeO2 apresenta sobre a adsorção oxidativa do SO2. Todavia, para tempos de reação maiores (35 min), não se observou uma correlação clara entre a composição química do catalisador e a quantidade total de SOx removida. Os aditivos foram ainda testados em ciclos de reação-regeneração em condições equivalentes ao segundo conjunto de testes descrito. De um modo geral, os aditivos que contêm cobre têm uma vida útil superior aos demais, possivelmente, pelo fato do cobre ter importante papel na regeneração do aditivo

Conservação de energia em redes de sensores sem fio.

Esta dissertação tem por objetivo propor algoritmos para conservação de energia de uma rede de sensores sem fio (RSSF) aplicada ao monitoramento de um processo suave f(x , y, t), que depende das coordenadas x e y dos nós sensores, e do tempo t, de forma a aumentar a autonomia da rede. Os algoritmos rodam na camada de aplicação de cada nó, e visam a economia de energia dos nós através do gerenciamento da necessidade de transmissões. Após a primeira amostra transmitida, apenas amostras com uma variação percentual maior do que um dado limiar são transmitidas. Além disso, cada nó pode permanecer inativo (economizando energia) entre essas transmissões. Em RSSfs de salto único, são propostos dois algoritmos: um baseado na fonte, onde cada nó é responsável por todo o processamento e tomada de decisões, e outro baseado no sorvedouro, onde todo o processamento e a tomada de decisões são realizadas pelo sorvedouro. Além disso, uma extensão de algoritmo baseado na fonte é proposta, para RSSFs de múltiplos saltos. Através dos resultados obtidos, observa-se que os algoritmos conseguiram uma redução significativa da quantidade de transmissões, o que leva a um aumento do tempo de vida e o erro na reconstrução do processo é apresentada. Desta forma, pode-se conjugar a relação entre tempo de vida máximo e erro de reconstrução mínimo.

The development of aerodynamic performance measurements in a transient test facility

Transient test facilities offer the potential for the simultaneous study of turbine aerodynamic performance, unsteady flow phenomena and the heat transfer characteristics of a turbine stage. This paper describes the development of aerodynamic performance measurement techniques in the Oxford Rotor Facility (ORF). The solutions to the technological issues involved with transient testing presented in this paper are expected to achieve levels of precision uncertainty comparable with traditional steady flow test rigs. The theoretical background to the measurement of aerodynamic performance is presented together with a comprehensive pre-test uncertainty analysis. The instrumentation scheme for the measurement of stage mass flow rate is discussed in detail, the measurements of shaft power, total inlet enthalpy, and stage pressure ratio are also outlined. The current working section features a 62% scale, 1-1/2 stage, high-pressure shroudless transonic turbine. The required inlet flow conditions are provided by an Isentropic Light Piston Tunnel (ILPT) with a quasi-steady state run time of approximately 70ms. The testing is conducted at engine representative specific speed, pressure ratio, gas-to-wall temperature ratio, Mach number and Reynolds number.

Engineering development of the Lancaster flexible bag.

Describes progress in the last 12 months which has established bag designs and fabrication techniques, giving greater confidence in the life and cost of these components. A quarter scale bag is under construction. Extensive tank testing has also established life time bending moment and mooring load envelopes, enabling hull and mooring design to proceed. A computer simulation programme has been used to check tank model results and to establish turbine and generator operating conditions. This has allowed generation and transmission component design to proceed, and suggests a high operating efficiency can be maintained with a simple control regime. Simple solutions in minor areas such as valve design and damage stability control add to the picture of steady progress in establishing the Lancaster Flexible Bag 's feasibility.

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

Energy transfer and enhanced 1.54 μm emission in Erbium-Ytterbium disilicate thin films.

α-(Yb1-xErx)2Si2O7 thin films on Si substrates were synthesized by magnetron co-sputtering. The optical emission from Er3+ ions has been extensively investigated, evidencing the very efficient role of Yb-Er coupling. The energy-transfer coefficient was evaluated for an extended range of Er content (between 0.2 and 16.5 at.%) reaching a maximum value of 2 × 10⁻¹⁶ cm⁻³s⁻¹. The highest photoluminescence emission at 1535 nm is obtained as a result of the best compromise between the number of Yb donors (16.4 at.%) and Er acceptors (1.6 at.%), for which a high population of the first excited state is reached. These results are very promising for the realization of 1.54 μm optical amplifiers on a Si platform.

Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors

Theoretical calculation of electronic energy levels of an asymmetric InAs/InGaAS/GaAS quantum-dots-in-a-well (DWELL) structure for infrared photodetectors is performed in the framework of effective-mass envelope-function theory. Our calculated results show that the electronic energy levels in quantum dots (QDs) increase when the asymmetry increases and the ground state energy increases faster than the excited state energies. Furthermore, the results also show that the electronic energy levels in QDs decrease as the size of QDs and the width of quantum well (QW) in the asymmetric DWELL structure increase. Additionally, the effects of asymmetry, the size of QDs and the width of QW on the response peak of asymmetry DWELL photodetectors are also discussed.

Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector

Strongly vertically coupled InAs/GaAs quantum dots (QDs) with modulation doping are investigated, and polarization dependence of two-color absorptions was observed. Analysis of photoluminescence (PL) and absorption spectra shows that s-polarized absorptions at. 10.0 and 13.4 mu m, stem from the first excited state E-1 and the second excited state E-2 in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively, whereas p-polarized absorptions at 10.0 and 8.2 mu m stem from the first excited state E-1 and the ground E-g in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively. These measurements illustrate that transitions from excited states are more sensitive to normal incidence, which are very important in designing QD infrared detector. (C) 2007 Elsevier B.V. All rights reserved.

Spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells

The electronic states of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells are investigated theoretically in the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling. The splits of electron energy levels are calculated. The results show that (1) the split energy of the excited state is larger than that of the ground state; (2) the split energy peak appears as the GaAs well width increases from zero; and (3) the maximum split energy reaches about 1.6 meV. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices. (c) 2008 American Institute of Physics.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3143025]

Decay lifetime and evolution of semiconductor quantum dots in photonic crystals

Spontaneous emission from GaAs/AlGaAs quantum dots (QDs) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. The results show that the decay lifetime is very sensitive to the sizes of QDs, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. The Weisskopf-Wigner approximation, good for atoms and molecules, may be incorrect for QDs. A damped Rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 Elsevier Ltd. All rights reserved.

Energy Levels of Hydrogenic Impurities in InAs Quantum Ring

The distribution of energy levels of the ground state and the low-lying excited states of hydrogenic impurities in InAs quantum ring was investigated by applying the effective mass approximation and the perturbation method. In 2D polar coordinates, the exact solution to the Schrodinger equation was used to calculate the perturbation integral in a parabolic confinement potential. The numerical results show that the energy levels of electron are sensitively dependent on the radius of the quantum ring and a minimum exists on account of the parabolic confinement potential. With decreasing the radius, the energy spacing between energy levels increases. The degenerate energy levels of the first excited state for hydrogenic impurities are not relieved, and when the degenerate energy levels are split and the energy spacing will increase with the increase in the radius. The energy spacing between energy levels of electron is also sensitively dependent on the angular frequency and will increase with the increases in it. The degenerate energy levels of the first excited state are not relieved. The degenerate energy levels of the second excited state are relieved partially. The change in angular frequency will have a profound effect upon the calculation of the energy levels of the ground state and the low-lying excited states of hydrogenic impurities in InAs quantum ring. The conclusions of this paper will provide important guidance to investigating the optical transitions and spectral structures in quantum ring.

Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.

Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure

The photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots was investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the ground and the first excited states in large InAs dots was observed. The pressure coefficients of the two emissions were 69 and 72 meV/GPa, respectively. A nonlinear elasticity theory was used to interpret the significantly small pressure coefficients of the large dots. The sequential quenching of the ground and the excited state emissions with increasing pressure suggests that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states. (C) 2004 American Institute of Physics.