Effect of niobia on the crystal structure and dielectric characteristics of Pb(Zr0.45Ti0.55)O-3 prepared from polymeric precursor

The influence of niobia addition on the phase formation and dielectric properties of Pb(Zr0.45Ti0.55)O-3 powder prepared from polymeric precursor was analyzed. The weight fraction and unit-cell volume of the tetragonal phase decreased, and the mass fraction of the rhombohedral phase increased, with increasing niobia concentration. The rhombohedral unit-cell volume increased up to 5 mol% of added Nb and then decreased. Small amounts of pyrochlore and tetragonal zirconia phases were observed in PZT powder with more than 10 mol% Nb. These results were interpreted as an indication that the Nb ion was substituted for the zirconium ion in the tetragonal phase. For sintered PZT samples at 1100 degrees C, no free-zirconia phase was observed. The dielectric constant increased with the niobia addition up to 5 mol% and decreased for higher concentrations. The Curie temperature decreased with niobia addition up to 10 mol% before the formation of pyrochlore phase. (C) 2000 Elsevier B.V. Ltd. All rights reserved.

PZT ceramics obtained from mechanochemically synthesized powders

PZT ceramics were obtained from the mechanochemically synthesized powders. Milling and sintering conditions were optimized based on results of density measurements, as well as on microstructural and electrical characterization. As a result, highly dense and homogeneous ceramics were obtained. Excellent microstructural properties resulted in good electrical properties. Samples showed values of dielectric constants reaching 12800 at the Curie temperature, as well as low dielectric loss under the optimal processing conditions. High values of remanent polarization, reaching 60 muC cm(-2), indicate high internal polarizability. (C) 2003 Kluwer Academic Publishers.

Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method

Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The scanning electron microscopy shows a change of morphology with increasing the lanthanum concentration. The BLT films show well-saturated polarization-electric field curves whit remnant polarizations of 14.7, 20.5, 21.5, and 20.4 muC/cm(2) for x = 0, 0.25, 0.50 and 0.75, respectively. The dielectric constant of BLT (x = 0.75 mol% La) is equal to 158 while dielectric loss remain low (tandelta = 0.0018).

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Bismuth titanate (Bi4Ti3O12-BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 degrees C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. on the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. (c) 2006 Elsevier Ltd. All rights reserved.

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.

Effect of PbO excess on the formation of lead magnesium niobate perovskite by the columbite method

The effect of lead excess on the pyrochlore-type formation in Pb(Mg1/3Nb2/3)O-3 (PMN) powders has been investigated. The polymeric precursor method was used in the synthesis of the columbite in association to the partial oxalate method to synthesize the PMN powder samples. Structure refinement of the columbite precursor and PMN powders was carried out using the Rietveld method. The quantitative phase analysis showed that the amount of perovskite phase is not affected by PbO excess, but a great excess drives the pyrochlore-type formation so that 3 wt.% of PbO causes the predominance of Mg-containing pyrochlore phase. Using the refined data obtained from the Rietveld refinement, the compositional fluctuation in the perovskite phase was calculated from Nb/Mg ratio values and Pb occupation factor. Mg inclusion occurs concomitant with Ph one into PMN perovskite phase and this effect is directed by PbO excess during powder synthesis. (C) 2003 Elsevier B.V. All rights reserved.

Barium strontium titanate nanocrystalline thin films prepared by soft chemical method

Barium strontium titanate (Ba0.65Sr0.35TiO3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 degrees C show food electric properties. The ferroelectric nature of the BST35 thin film was indicated by buttertly- shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100kHz. The dissipation factor was 0.01 at 100kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64 Mb ( 1-5 mu C/cm(2) and 265 Mb (2-11 mu C/cm(2)) DRAMs. (C) 2007 Elsevier Ltd. All rights reserved.

SiO2-PbF2-CdF2 glasses and glass ceramics

Lead-Cadmium fluorosilicate stable glasses were prepared and the vitreous domain region determined in the composition diagram. Characteristic temperatures were obtained from thermal analysis and the structural studies performed illustrate clearly the role played by lead atoms in the glasses crystallization behavior and the glass-forming ability of cadmium atoms. The occurrence of either a cubic lead fluoride or a lead-cadmium fluoride solid solution in crystallizing samples was found to be dependent on Er3+ doping. The optically active ions were found to concentrate in the crystalline phase and in fact play the role of nucleating agent as suggested from X-ray diffraction and EXAFS measurements. (C) 2002 Elsevier B.V. Ltd. All rights reserved.

Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors

Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved.

Separation of dielectric and space charge polarizations in CaCu3Ti4O12/CaTiO3 composite polycrystalline systems

The complex analysis of dielectric/capacitance is a very useful approach to separate different polarization contributions existing in polycrystalline ceramics. In this letter, the authors use this type of spectroscopic analysis to separate the bulk's dielectric dipolar relaxation contributions from the polarization contribution due to space charge in the grain boundaries of a CaCu3Ti4O12/CaTiO3 polycrystalline composite system. The bulk dielectric dipolar relaxation was attributed to the self-intertwined domain structures from the CaCu3Ti4O12 phase coupled to the dipole relaxation from the CaTiO3 phase, while the space charge relaxation was attributed to the Schottky-type potential barrier responsible for the highly non-Ohmic properties observed in this composite polycrystalline system.

Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Evolution of CaCu3Ti4O12 varistor properties during heat treatment in vacuum

Calcium copper titanate (CaCu3Ti4O12) ceramic varistors were prepared by solid-state method. The samples were several times heat treated in vacuum and the evolution of electrical characteristics were monitored by current density versus electric field measurements and impedance spectroscopy. Repeated heat treatments in vacuum (900 degrees C for 1 h, 0.01 Torr) lead to a desorption of oxygen adsorbed at the grain boundaries and consequently to a degradation of the varistor properties. During further successive heat treatments some oxygen from the grain interior moves to the grain boundary thereby partially restoring the varistor properties. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Structural and ferroelectric properties of Pb1-xSrxTiO3 thin films

Strontium-modified lead titanate (PST) thin films with composition Pb1-xSrxTiO3 (0.10 < x &LE; 0.60) were grown on Pt/Ti/SiO2/Si substrates using a soft chemical process. The crystallization of the PST thin films was achieved by heat treatment at 600&DEG;C. The structural and microstructural modifications in the films were studied using X-ray diffraction (XRD) and atomic force microscopy, respectively. The XRD study shows that the lattice parameters of polycrystalline PST thin films calculated from X-ray data indicate a decrease in lattice tetragonality with the increase in strontium content in these films. This indicates a gradual change from tetragonal to cubic structure. By atomic force microscopy analysis, the average grain size of the thin films was systematically reduced with the increase in Sr content. The dielectric property of the thin films was found to be strongly dependent on the Sr concentration. With 60 at.% Sr content, a ferroelectric to paraelectric phase transition was observed at room temperature.

Conductivity and F-19 NMR in PbGeO3-PbF2-CdF2 glasses and glass-ceramics

The temperature dependence of the electrical conductivity and the F-19 nuclear magnetic resonance (NMR) of PbGeO3-PbF2CdF, glasses and glass ceramics are investigated. The measured conductivity values of the glasses are above 10(-5) Skin at 500 K, and increase with increasing lead fluoride content. Activation energies extracted from the conductivity data are in the range 0.59-0.73 eV. Results are consistent with the hypothesis that in these oxyfluoride glasses lead fluoride rich clusters are dispersed in a metagermanate based matrix providing increasing mobility pathways for conducting ions. The conductivity of a sample of the glass ceramic of composition (mol%) 60PbGeO(3-)20PbF(2)-20CdF(2) was found to be smaller than that in the corresponding glass, suggesting that there are poor ionic conducting regions in the interface between the nanometer sized crystals. The temperature dependence of the F-19 relaxation times, measured in the range 100-800 K, exhibit the qualitative features associated with high fluorine mobility in both, glass and glass ceramics materials. We suggest that de-convolution of the spin-lattice relaxation rates observed in the glass ceramics shows that the observed high temperature rate maximum is associated with the diffusional motions of the fluorine ions in beta-PbF2 crystals. (c) 2005 Elsevier B.V. All rights reserved.

Isotope geochemistry of the mafic dikes from the Vazante nonsulfide zinc deposit, Brazil

The Vazante Group, located in the northwestern part of Minas Gerais, hosts the most important zinc mine in Brazil, the Vazante Mine, which represents a major known example of a hypogene nonsulfide zinc deposit. The main zinc ore is represented by willemite and differs substantially from other deposits of the Vazante-Paracatu region, which are sulfide-dominated zinc-lead ore. The age of the Vazante Group and the hosted mineralization is disputable. Metamorphosed mafic dikes (metabasites) that cut the metasedimentary sequence and are affected by hydrothermal processes recently were found and may shed light on the geochronology of this important geological unit. Zircon crystals recovered from the metabasites are xenocrystic grains that yield U-Pb conventional ages ranging from 2.1 to 2.4 Ga, so the basement of the Vazante Group is Paleoproterozoic or has metasedinientary rocks whose source area was Paleoproterozoic. Pb isotopes determined for titanite separated from the metabasites have common, nonradiogenic Ph compositions, which prevents determination of their crystallization age. However, the Pb signatures observed for the titanite crystals are in agreement with those determined for galena from the carbonate-hosted Zn-Pb deposits hosted by the Vazante Group, including galena from minor sulfide ore bodies of the Vazante deposit. These similarities suggest that the metalliferous fluids that affected the metabasites may have been those responsible for galena formation, which could imply a similar lead source for both nonsulfide and sulfide zinc deposits in the Vazante-Paracatu district. This common source could be related to deep-seated, basin-derived, metalliferous fluids associated with a long-lived hydrothermal system related to diagenesis and deformation of the Vazante Group during the Neoproterozoic. (c) 2005 Elsevier Ltd. All rights reserved.