Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process

gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.

Very low hysteresis organic thin-film transistors

Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

On the Impact of Low-Rate Attacks

Recent research have exposed new breeds of attacks that are capable of denying service or inflicting significant damage to TCP flows, without sustaining the attack traffic. Such attacks are often referred to as "low-rate" attacks and they stand in sharp contrast against traditional Denial of Service (DoS) attacks that can completely shut off TCP flows by flooding an Internet link. In this paper, we study the impact of these new breeds of attacks and the extent to which defense mechanisms are capable of mitigating the attack's impact. Through adopting a simple discrete-time model with a single TCP flow and a nonoblivious adversary, we were able to expose new variants of these low-rate attacks that could potentially have high attack potency per attack burst. Our analysis is focused towards worst-case scenarios, thus our results should be regarded as upper bounds on the impact of low-rate attacks rather than a real assessment under a specific attack scenario.

Interpolation formula between very low and intermediate-to-high damping Kramers escape rates for single-domain ferromagnetic particles

It is shown that the Mel'nikov-Meshkov formalism for bridging the very low damping (VLD) and intermediate-to-high damping (IHD) Kramers escape rates as a function of the dissipation parameter for mechanical particles may be extended to the rotational Brownian motion of magnetic dipole moments of single-domain ferromagnetic particles in nonaxially symmetric potentials of the magnetocrystalline anisotropy so that both regimes of damping, occur. The procedure is illustrated by considering the particular nonaxially symmetric problem of superparamagnetic particles possessing uniaxial anisotropy subject to an external uniform field applied at an angle to the easy axis of magnetization. Here the Mel'nikov-Meshkov treatment is found to be in good agreement with an exact calculation of the smallest eigenvalue of Brown's Fokker-Planck equation, provided the external field is large enough to ensure significant departure from axial symmetry, so that the VLD and IHD formulas for escape rates of magnetic dipoles for nonaxially symmetric potentials are valid.

Target Structure Induced Suppression of the Ionization Cross Section for Very Low Energy Antiproton-Hydrogen Collisions

Low energy antiprotons have been used previously to give benchmark data for theories of atomic collisions. Here we present measurements of the cross section for single, nondissociative ionization of molecular hydrogen for impact of antiprotons with kinetic energies in the range 2-11 keV, i.e., in the velocity interval of 0.3-0.65 a.u. We find a cross section which is proportional to the projectile velocity, which is quite unlike the behavior of corresponding atomic cross sections, and which has never previously been observed experimentally.